Recent Developments in the Field of the Metal-Insulator Transition in Two Dimensions

Quantum scaling for the metal-insulator transition in a two-dimensional electron system

The quantum phase transition observed experimentally in two-dimensional (2D) electron systems has been a subject of theoretical and experimental studies for almost 30 years. We suggest Gaussian approximation to the mean-field theory of the second-order phase transition to explain the experimental data. Our approach explains self-consistently the universal value of the critical exponent 3/2 (found after scaling measured resistivities on both sides of the transition as a function of temperature) as the result of the divergence of the correlation length when the electron density approaches the critical value. We also provide numerical evidence for the stretched exponential temperature dependence of the metallic phase's resistivities in a wide range of temperatures and show that it leads to correct qualitative results. Finally, we interpret the phase diagram on the density-temperature plane exhibiting the quantum critical point, quantum critical trajectory and two crossover lines. Our research presents a theoretical description of the seminal experimental results.

Rashba Metamaterials and Metasurfaces with Zero Reflectivity and Effect of Surface States in Ultrathin Metal Films

Metals, renowned for their high reflectivity, find extensive use in various technological applications, from mirrors to optical coatings in radars, telescopes, and mobile communications. However, their potential in antireflective coatings has remained largely untapped. In this study, we demonstrate that by applying an ultrathin metallic film onto an oxide layer, we can achieve a flawless optical surface with zero reflectivity. This phenomenon has been successfully observed across various metals, including Sn, Ag, Au, Pt, Bi, and Nb, showcasing its broad applicability. The underlying principle lies in the emergence of surface states, where the Rashba effect is strong, which give rise to the formation of Rashba metamaterial and metasurface (RMM) structures. Remarkably, these RMMs can be fine-tuned to act as high-resolution Veselago lenses. To illustrate, we achieved zero reflectivity with an RMM consisting of a 1 nm thick Sn metal film on a 1 nm Ge buffer, situated on a 60 nm Al2O3/Si substrate. Similar results were observed for other metals (Pt, Au, Ag, and Nb) and semimetals (Bi) by adjusting the film thickness to 2, 3, 5, 10, and 6 nm, respectively. The revelation of RMMs with zero reflectivity (R = 0) has tremendous potential to revolutionize optical device technologies, covering renewable energy, optoelectronics, and the telecommunications industry.

Anomalous High-Temperature Magnetoresistance in a Dilute 2D Hole System

We report an unusual magnetoresistance that strengthens with the temperature in a dilute two-dimensional (2D) hole system in GaAs/AlGaAs quantum wells with densities p=1.98-0.99×10^{10}/cm^{2} where r_{s}, the ratio between Coulomb energy and Fermi energy, is as large as 20-30. We show that, while the system exhibits a negative parabolic magnetoresistance at low temperatures (≲0.4  K) characteristic of an interacting Fermi liquid, a positive magnetoresistance emerges unexpectedly at higher temperatures, and grows with increasing temperature even in the regime T∼E_{F}, close to the Fermi energy. This unusual positive magnetoresistance at high temperatures can be attributed to the viscous transport of 2D hole fluid in the hydrodynamic regime where holes scatter frequently with each other. These findings give insight into the collective transport of strongly interacting carriers in the r_{s}≫1 regime and new routes toward magnetoresistance at high temperatures.

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature [Formula: see text], at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value [Formula: see text] decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of [Formula: see text] cannot be described by existing theories. The results indicate the spin-related origin of the effect.

Competing correlated states around the zero-field Wigner crystallization transition of electrons in two dimensions

The competition between kinetic energy and Coulomb interactions in electronic systems leads to complex many-body ground states with competing orders. Here we present zinc oxide-based two-dimensional electron systems as a high-mobility system to study the low-temperature phases of strongly interacting electrons. An analysis of the electronic transport provides evidence for competing correlated metallic and insulating states with varying degrees of spin polarization. Some features bear quantitative resemblance to quantum Monte Carlo simulation results, including the transition point from the paramagnetic Fermi liquid to Wigner crystal and the absence of a Stoner transition. At very low temperatures, we resolve a non-monotonic spin polarizability of electrons across the phase transition, pointing towards a low spin phase of electrons, and a two-order-of-magnitude positive magnetoresistance that is challenging to understand within traditional metallic transport paradigms. This work establishes zinc oxide as a platform for studying strongly correlated electrons in two dimensions.

Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition

We report on the electric transport properties of Si heavily doped with Sb at concentration just below the insulator-to-metal transition in the temperature range 1.9-3.0 K for current density J  <  0.2 A cm^-2. The change in the sign of the temperature dependence of the differential resistivity [Formula: see text] was observed: the d[Formula: see text]/dT is positive if J  <  0.045 A cm^-2 whereas it becomes negative at J  >  0.045 A cm^-2. The effect is explained assuming the exchange by electrons between the upper Hubbard band (UHB) and the conduction band. The obtained J dependencies of the activation energy, nonequilibrium concentration, mobility and scattering time of the conduction electrons correspond well to this hypothesis. The reason for charge instability is the Coulomb repulsion between electrons occupying states both in the UHB and conduction band. The estimated J dependencies of the conduction electrons lifetime and concentration of the D^- states in the UHB strongly supports this assumption.