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Min C, Chen Y, Yang Y, Wu H, Guo B, Wu S, Huang Q, Qin D, Hou L. A Simple and Effective Phosphine-Doping Technique for Solution-Processed Nanocrystal Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111766. [PMID: 37299669 DOI: 10.3390/nano13111766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2023] [Revised: 05/15/2023] [Accepted: 05/27/2023] [Indexed: 06/12/2023]
Abstract
Solution-processed cadmium telluride (CdTe) nanocrystal (NC) solar cells offer the advantages of low cost, low consumption of materials and large-scale production via a roll-to-roll manufacture process. Undecorated CdTe NC solar cells, however, tend to show inferior performance due to the abundant crystal boundaries within the active CdTe NC layer. The introduction of hole transport layer (HTL) is effective for promoting the performance of CdTe NC solar cells. Although high-performance CdTe NC solar cells have been realized by adopting organic HTLs, the contact resistance between active layer and the electrode is still a large problem due to the parasitic resistance of HTLs. Here, we developed a simple phosphine-doping technique via a solution process under ambient conditions using triphenylphosphine (TPP) as a phosphine source. This doping technique effectively promoted the power conversion efficiency (PCE) of devices to 5.41% and enabled the device to have extraordinary stability, showing a superior performance compared with the control device. Characterizations suggested that the introduction of the phosphine dopant led to higher carrier concentration, hole mobility and a longer lifetime of the carriers. Our work presents a new and simple phosphine-doping strategy for further improving the performance of CdTe NC solar cells.
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Affiliation(s)
- Chenbo Min
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Yihui Chen
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Yonglin Yang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Hongzhao Wu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Bailin Guo
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Sirui Wu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Qichuan Huang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Donghuan Qin
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
| | - Lintao Hou
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
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Hou M, Zhou Z, Xu A, Xiao K, Li J, Qin D, Xu W, Hou L. Synthesis of Group II-VI Semiconductor Nanocrystals via Phosphine Free Method and Their Application in Solution Processed Photovoltaic Devices. NANOMATERIALS 2021; 11:nano11082071. [PMID: 34443902 PMCID: PMC8399757 DOI: 10.3390/nano11082071] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Revised: 08/10/2021] [Accepted: 08/11/2021] [Indexed: 11/16/2022]
Abstract
Solution-processed CdTe semiconductor nanocrystals (NCs) have exhibited astonishing potential in fabricating low-cost, low materials consumption and highly efficient photovoltaic devices. However, most of the conventional CdTe NCs reported are synthesized through high temperature microemulsion method with high toxic trioctylphosphine tellurite (TOP-Te) or tributylphosphine tellurite (TBP-Te) as tellurium precursor. These hazardous substances used in the fabrication process of CdTe NCs are drawing them back from further application. Herein, we report a phosphine-free method for synthesizing group II-VI semiconductor NCs with alkyl amine and alkyl acid as ligands. Based on various characterizations like UV-vis absorption (UV), transmission electron microscope (TEM), and X-ray diffraction (XRD), among others, the properties of the as-synthesized CdS, CdSe, and CdTe NCs are determined. High-quality semiconductor NCs with easily controlled size and morphology could be fabricated through this phosphine-free method. To further investigate its potential to industrial application, NCs solar cells with device configuration of ITO/ZnO/CdSe/CdTe/Au and ITO/ZnO/CdS/CdTe/Au are fabricated based on NCs synthesized by this method. By optimizing the device fabrication conditions, the champion device exhibited power conversion efficiency (PCE) of 2.28%. This research paves the way for industrial production of low-cost and environmentally friendly NCs photovoltaic devices.
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Affiliation(s)
- Mingyue Hou
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Zhaohua Zhou
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Ao Xu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Kening Xiao
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Jiakun Li
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
| | - Donghuan Qin
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
- Correspondence: (D.Q.); (W.X.); (L.H.)
| | - Wei Xu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (M.H.); (Z.Z.); (A.X.); (K.X.); (J.L.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
- Correspondence: (D.Q.); (W.X.); (L.H.)
| | - Lintao Hou
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
- Correspondence: (D.Q.); (W.X.); (L.H.)
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Jiang Y, Pan Y, Wu W, Luo K, Rong Z, Xie S, Zuo W, Yu J, Zhang R, Qin D, Xu W, Wang D, Hou L. Hole Transfer Layer Engineering for CdTe Nanocrystal Photovoltaics with Improved Efficiency. NANOMATERIALS 2020; 10:nano10071348. [PMID: 32664220 PMCID: PMC7407640 DOI: 10.3390/nano10071348] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Revised: 06/28/2020] [Accepted: 07/04/2020] [Indexed: 11/17/2022]
Abstract
Interface engineering has led to significant progress in solution-processed CdTe nanocrystal (NC) solar cells in recent years. High performance solar cells can be fabricated by introducing a hole transfer layer (HTL) between CdTe and a back contact electrode to reduce carrier recombination by forming interfacial dipole effect at the interface. Here, we report the usage of a commercial product 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro) as a hole transfer layer to facilitate the hole collecting for CdTe nanocrystal solar cells. It is found that heat treatment on the hole transfer layer has significant influence on the NC solar cells performance. The Jsc, Voc, and power conversion efficiency (PCE) of NC solar cells are simultaneously increased due to the decreased contact resistance and enhanced built-in electric field. We demonstrate solar cells that achieve a high PCE of 8.34% for solution-processed CdTe NC solar cells with an inverted structure by further optimizing the HTL annealing temperature, which is among the highest value in CdTe NC solar cells with the inverted structure.
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Affiliation(s)
- Yasi Jiang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Yiyang Pan
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Wanhua Wu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Kaiying Luo
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Zhitao Rong
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Sihang Xie
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Wencai Zuo
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Jingya Yu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Ruibo Zhang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
| | - Donghuan Qin
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
- Correspondence: (D.Q.); (L.H.); Tel.: +86-020-8711-4346 (D.Q.); +86-020-8522-4386 (L.H.)
| | - Wei Xu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
| | - Dan Wang
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China; (Y.J.); (Y.P.); (W.W.); (K.L.); (Z.R.); (S.X.); (W.Z.); (J.Y.); (R.Z.); (W.X.); (D.W.)
- State Key Laboratory of Luminescent Materials & Devices, Institute of Polymer Optoelectronic Materials & Devices, South China University of Technology, Guangzhou 510640, China
| | - Lintao Hou
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Department of Physics, Jinan University, Guangzhou 510632, China
- Correspondence: (D.Q.); (L.H.); Tel.: +86-020-8711-4346 (D.Q.); +86-020-8522-4386 (L.H.)
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Agoro MA, Mbese JZ, Meyer EL. Electrochemistry of Inorganic OCT-PbS/HDA and OCT-PbS Photosensitizers Thermalized from Bis( N-diisopropyl- N-octyldithiocarbamato) Pb(II) Molecular Precursors. Molecules 2020; 25:E1919. [PMID: 32326265 PMCID: PMC7221899 DOI: 10.3390/molecules25081919] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2020] [Revised: 04/09/2020] [Accepted: 04/13/2020] [Indexed: 11/16/2022] Open
Abstract
Inorganic nanocrystal solar cells have been tagged as the next generation of synthesizers that have the potential to break new ground in photovoltaic cells. This synthetic route offers a safe, easy and cost-effective method of achieving the desired material. The present work investigates the synthesis of inorganic PbS sensitizers through a molecular precursor route and their impact on improving the conversion efficiency in photovoltaic cells. PbS photosensitizers were deposited on TiO2 by direct deposition, and their structure, morphologies and electrocatalytic properties were examined. The X-ray diffraction (XRD) confirms PbS nanocrystal structure and the atomic force microscopy (AFM) displays the crystalline phase of uniform size and distribution of PbS, indicating compact surface nanoparticles. The electrocatalytic activity by lead sulfide, using N-di-isopropyl-N-octyldithiocarbamato (OCT) without hexadecylamine (HDA) capping (OCT-PbS) was very low in HI-30 electrolyte, due to its overpotential, while lead sulfide with OCT and HDA-capped (OCT-PbS/HDA) sensitizer exhibited significant electrocatalytic activity with moderate current peaks due to a considerable amount of reversibility. The OCT-PbS sensitizer exhibited a strong resistance interaction with the electrolyte, indicating very poor catalytic activity compared to the OCT-PbS/HDA sensitizer. The values of the open-circuit voltage (VOC) were ~0.52 V, with a fill factor of 0.33 for OCT-PbS/HDA. The better conversion efficiency displayed by OCT-PbS/HDA is due to its nanoporous nature which improves the device performance and stability.
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Affiliation(s)
- Mojeed A. Agoro
- Department of Chemistry, University of Fort Hare, Private Bag X1314, Alice 5700, South Africa
- Fort Hare Institute of Technology, University of Fort Hare, Private Bag X1314, Alice 5700, South Africa;
| | - Johannes Z. Mbese
- Department of Chemistry, University of Fort Hare, Private Bag X1314, Alice 5700, South Africa
| | - Edson L. Meyer
- Fort Hare Institute of Technology, University of Fort Hare, Private Bag X1314, Alice 5700, South Africa;
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Balakirev SV, Solodovnik MS, Eremenko MM, Konoplev BG, Ageev OA. Mechanism of nucleation and critical layer formation during In/GaAs droplet epitaxy. NANOTECHNOLOGY 2019; 30:505601. [PMID: 31480037 DOI: 10.1088/1361-6528/ab40d6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Fabrication of AIIIBV nanostructures by droplet epitaxy has many advantages over other epitaxial techniques. Although various characteristics of the growth by droplet epitaxy have been thoroughly studied for both lattice-matched and mismatched systems, little is known about physical processes hindering the formation of small size InAs/GaAs nanostructure arrays with low density and thin wetting layer. In this paper, we experimentally demonstrate that the indium droplet diameter can be reduced by decreasing the deposition time, but this reduction is limited by a critical thickness of droplet formation dependent on the substrate temperature. Using the kinetic Monte Carlo model, we propose a mechanism considering that the droplet formation begins when the system overcomes a barrier determined by the substrate attraction. As a result of physical and chemical balancing between adatom aggregation and substrate wetting, this attraction becomes weaker with increasing either temperature or deposition amount, which leads to the critical layer formation and subsequent nucleation. Using this mechanism, it is possible to provide a wide control over the nanostructure growth which is especially important at high temperatures when the processes of the island ripening are particularly intensive.
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Affiliation(s)
- Sergey V Balakirev
- Department of Nanotechnologies and Microsystems, Southern Federal University, Institute of Nanotechnologies, Electronics and Equipment Engineering, 2 Shevchenko St., Taganrog 347922, Russia
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