Impact Features Induced by Single Fast Ions of Different Charge-State on Muscovite Mica

Charge State Effects in Swift-Heavy-Ion-Irradiated Nanomaterials

The aim of this experimental work was to investigate the influence of the ion beam charge state on damage production in nanomaterials. To achieve this, we employed Raman spectroscopy, atomic force microscopy, and transmission electron microscopy to investigate nanomaterials irradiated by a 23 MeV I beam. We found a significant influence of the ion charge state on damage production in monolayer graphene, but found no evidence of this effect in bilayer and trilayer graphene, nor in graphite. Furthermore, we found no evidence of this effect in CaF2 and SiO2 nanocrystals irradiated with the same ion beam.

Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact

It has been known that the modification of non-metallic solid materials (oxides, nitrides, etc.), e.g., the formation of tracks, sputtering representing atomic displacement near the surface and lattice disordering are induced by electronic excitation under high-energy ion impact. We have investigated lattice disordering by the X-ray diffraction (XRD) of SiO2, ZnO, Fe2O3 and TiN films and have also measured the sputtering yields of TiN for a comparison of lattice disordering with sputtering. We find that both the degradation of the XRD intensity per unit ion fluence and the sputtering yields follow the power-law of the electronic stopping power and that these exponents are larger than unity. The exponents for the XRD degradation and sputtering are found to be comparable. These results imply that similar mechanisms are responsible for the lattice disordering and electronic sputtering. A mechanism of electron–lattice coupling, i.e., the energy transfer from the electronic system into the lattice, is discussed based on a crude estimation of atomic displacement due to Coulomb repulsion during the short neutralization time (~fs) in the ionized region. The bandgap scheme or exciton model is examined.

Charge State Effect of High Energy Ions on Material Modification in the Electronic Stopping Region

It has been observed that modifications of non-metallic solids such as sputtering and surface morphology are induced by electronic excitation under high-energy ion impact and that these modifications depend on the charge of incident ions (charge-state effect or incident-charge effect). A simple model is described, consisting of an approximation to the mean-charge-evolution by saturation curves and the charge-dependent electronic stopping power, for the evaluation of the relative yield (e.g., electronic sputtering yield) of the non-equilibrium charge incidence over that of the equilibrium-charge incidence. It is found that the present model reasonably explains the charge state effect on the film thickness dependence of lattice disordering of WO3. On the other hand, the model appears to be inadequate to explain the charge-state effect on the electronic sputtering of WO3 and LiF. Brief descriptions are given for the charge-state effect on the electronic sputtering of SiO2, UO2 and UF4, and surface morphology modification of poly-methyl-methacrylate (PMMA), mica and tetrahedral amorphous carbon (ta-C).