Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor

Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μFE), lower IOFF, and excellent stability under bias stress. TFTs have widespread applications, such as printed electronics, flexible displays, smart cards, image sensors, virtual reality (VR) and augmented reality (AR), and the Internet of Things (IoT) devices. In this study, we approach using a low-temperature solution-processed hafnium zirconium oxide (HfZrOx) gate insulator (GI) to improve the performance of lanthanum zinc oxide (LaZnO) TFTs. For the optimization of HfZrO GI, HfZrO films were annealed at 200, 250, and 300 °C. The optimized HfZrO-250 °C GI-based LaZnO TFT shows the μFE of 19.06 cm2V-1s-1, threshold voltage (VTH) of 1.98 V, hysteresis voltage (VH) of 0 V, subthreshold swing (SS) of 256 mV/dec, and ION/IOFF of ~108. The flexible LaZnO TFT with HfZrO-250 °C GI exhibits negligible ΔVTH of 0.25 V under positive-bias-temperature stress (PBTS). The flexible hysteresis-free LaZnO TFTs with HfZrO-250 °C can be widely used for flexible electronics. These enhancements were attributed to the smooth surface morphology and reduced defect density achieved with the HfZrO gate insulator. Therefore, the HfZrO/LaZnO approach holds great promise for next-generation MOS TFTs for flexible electronics.

A Fully Inkjet-Printed Strain Sensor Based on Carbon Nanotubes

A fully inkjet-printed strain sensor based on carbon nanotubes (CNTs) was fabricated in this study for microstrain and microcrack detection. Carbon nanotubes and silver films were used as the sensing layer and conductive layer, respectively. Inkjet-printed CNTs easily undergo agglomeration due to van der Waals forces between CNTs, resulting in uneven films. The uniformity of CNT film affects the electrical and mechanical properties. Multi-pass printing and pattern rotation provided precise quantities of sensing materials, enabling the realization of uniform CNT films and stable resistance. Three strain sensors printed eight-layer CNT film by unidirectional printing, rotated by 180° and 90° were compared. The low density on one side of eight-layer CNT film by unidirectional printing results in more disconnection and poor connectivity with the silver film, thereby, significantly increasing the resistance. For 180° rotation eight-layer strain sensors, lower sensitivity and smaller measured range were found because strain was applied to the uneven CNT film resulting in non-uniform strain distribution. Lower resistance and better strain sensitivity was obtained for eight-layer strain sensor with 90° rotation because of uniform film. Given the uniform surface morphology and saturated sheet resistance of the 20-layer CNT film, the strain performance of the 20-layer CNT strain sensor was also examined. Excluding the permanent destruction of the first strain, 0.76% and 1.05% responses were obtained for the 8- and 20-layer strain sensors under strain between 0% and 3128 µε, respectively, which demonstrates the high reproducibility and recoverability of the sensor. The gauge factor (GF) of 20-layer strain sensor was found to be 2.77 under strain from 71 to 3128 µε, which is higher than eight-layer strain sensor (GF = 1.93) due to the uniform surface morphology and stable resistance. The strain sensors exhibited a highly linear and reversible behavior under strain of 71 to 3128 µε, so that the microstrain level could be clearly distinguished. The technology of the fully inkjet-printed CNT-based microstrain sensor provides high reproducibility, stability, and rapid hardness detection.