Ultra-Low-Reflective, Self-Cleaning Surface by Fabrication Dual-Scale Hierarchical Optical Structures on Silicon

Quintic refractive index profile-based funnel-shaped silicon antireflective structures for enhanced photodetector performance

Antireflection, vital in optoelectronics devices such as solar cells and photodetectors, reduces light reflection and increases absorption. Antireflective structures (ARS), a primary method by which to realize this effect, control the refractive index (RI) profile based on their shape. The antireflection efficiency depends on the refractive index profile, with the quintic RI profile being recognized as ideal for superior antireflection. However, fabricating nano-sized structures with a desired shape, particularly in silicon with a quintic RI profile, has been a challenge. In this study, we introduce a funnel-shaped silicon (Si) ARS with a quintic RI profile. Its antireflective properties are demonstrated through reflectance measurements and by an application to a photodetector surface. Compared to the film Si and cone-shaped ARS types, which are common structures to achieve antireflection, the funnel-shaped ARS showed reflectance of 4.24% at 760 nm, whereas those of the film Si and cone-shaped ARS were 32.8% and 10.6%, respectively. Photodetectors with the funnel-shaped ARS showed responsivity of 0.077 A/W at 950 nm, which is 19.54 times higher than that with the film Si and 2.45 times higher than that with the cone-shaped ARS.

General Strategy toward Laser Single-Step Generation of Multiscale Anti-Reflection Structures by Marangoni Effect

The anti-reflection of transparent material surfaces has attracted great attention due to its potential applications. In this paper, a single-step controllable method based on an infrared femtosecond laser is proposed for self-generation multiscale anti-reflection structures on glass. The multiscale composite structure with ridge structures and laser-induced nano-textures is generated by the Marangoni effect. By optimizing the laser parameters, multiscale structure with broadband anti-reflection enhancement is achieved. Meanwhile, the sample exhibits good anti-glare performance under strong light. The results show that the average reflectance of the laser-textured glass in the 300-800 nm band is reduced by 45.5% compared with the unprocessed glass. This work provides a simple and general strategy for fabricating anti-reflection structures and expands the potential applications of laser-textured glass in various optical components, display devices, and anti-glare glasses.

Bio-Inspired Hierarchical Micro-/Nanostructures for Anti-Icing Solely Fabricated by Metal-Assisted Chemical Etching

We report a cost-effective and scalable methodology for producing a hierarchical micro-/nanostructured silicon surface solely by metal-assisted chemical etching. It involves two major processing steps of fabricating micropillars and nanowires separately. The process of producing micro-scale structures by masked metal-assisted chemical etching was optimized. Silicon nanowires were created on the micropillar’s surface via maskless metal-assisted chemical etching. The hierarchical micro-/nanostructured surface exhibits superhydrophobic properties with a high contact angle of ~156° and a low sliding angle of <2.5° for deionized water. Furthermore, due to the existence of microscale and nanoscale air trapped at the liquid/solid interface, it exhibits a long ice delay time of 2876 s at −5 °C, more than 5 times longer than that of smooth surfaces. Compared to conventional dry etching methods, the metal-assisted chemical etching approach excludes vacuum environments and high-temperature processes and can be applied for applications requiring hierarchical micro-/nanostructured surfaces or structures.

Dual-Band Terahertz Perfect Absorber Based on Metal Micro-Nano Structure

We propose a sub-wavelength range-based dual-band tunable ideal terahertz metamaterial perfect absorber. The absorber structure consists of three main layers, with the absorber layer consisting of a metal I-shaped structure. By simulating the incident wave absorbance of the structure, we found that the structure has more than 99% absorption peaks in both bands. In addition, we have investigated the relationship between structural absorbance and the structural geometrical parameters. We have studied the relationship between the thickness of the metal absorber layer hb and the absorbance of the metamaterial structure in the 4–14 THz band. Secondly, we have studied the relationship between the thickness of the SiO2 dielectric layer and structural absorbance. Afterwards, we have studied the relationship between the incident angle of the incident electromagnetic wave and structural absorbance. Finally, we have studied the relationship between the length of the metal structure and structural absorbance. The structure can be effectively used for detectors, thermal emitters, terahertz imaging and detection.