Improving the Structural, Optical and Photovoltaic Properties of Sb- and Bi- Co-Doped MAPbBr3 Perovskite Solar Cell

AlResheedi DB, Choi JR. Bandgap Engineering and Enhancing Optoelectronic Performance of a Lead-Free Double Perovskite Cs2AgBiBr6 Solar Cell via Al Doping

In this study, solar cells based on pure Cs2AgBiBr6 and Al-doped metal were fabricated using the sol-gel spin-coating technique. X-ray diffraction (XRD) analysis confirmed the formation of cubic-structured films for both pure and Al-doped. Notably, the grain size of Al-doped Cs2AgBiBr6 was observed to be larger than that of its pure counterpart. The optical properties of these films were investigated using UV-vis spectroscopy, revealing essential parameters such as the bandgap energy (Eg), refractive index (n), extinction coefficients (k), and dielectric constant. While the pure film exhibited an Eg of 1.91 eV, the Al-doped film demonstrated a slightly lower Eg of 1.82 eV. Utilization of these films in solar cell fabrication yielded intriguing results. The J-V curve shows that the pure solar cell displayed a short-circuit current density (Jsc) of 5.01 mA/cm2, a fill factor (FF) of 0.67, an open-circuit voltage (Voc) of 0.89 V, and an efficiency of 3.02%. Al doping led to improvements, with an increase in Voc to 0.91 V, FF to 0.71, and Jsc to 5.29 mA/cm2. Consequently, the overall efficiency surged to 3.40%, marking a substantial 12.5% enhancement compared with the pure solar cell. These findings underscore the efficacy of Al doping in enhancing the performance of Cs2AgBiBr6-based solar cells.

Bandgap reduction and efficiency enhancement in Cs2AgBiBr6 double perovskite solar cells through gallium substitution

Lead-free halide double perovskite (LFHDP) Cs2AgBiBr6 has emerged as a promising alternative to traditional lead-based perovskites (LBPs), offering notable advantages in terms of chemical stability and non-toxicity. However, the efficiency of Cs2AgBiBr6 solar cells faces challenges due to their wide bandgap (Eg). As a viable strategy to settle this problem, we consider optimization of the optical and photovoltaic properties of Cs2AgBiBr6 by Gallium (Ga) substitution. The synthesized Cs2Ag0.95Ga0.05BiBr6 is rigorously characterized by means of X-ray diffraction (XRD), UV-vis spectroscopy, and solar simulator measurements. XRD analysis reveals shifts in peak positions, indicating changes in the crystal lattice due to Ga substitution. The optical analysis demonstrates a reduction in the Eg, leading to improvement of the light absorption within the visible spectrum. Importantly, the Cs2Ag0.95Ga0.05BiBr6 solar cell exhibits enhanced performance, as evidenced by higher values of open circuit voltage (Voc), short-circuit current (Jsc), and fill factor (FF), which are 0.94 V, 6.01 mA cm-2, and 0.80, respectively: this results in an increased power conversion efficiency (PCE) from 3.51% to 4.52%. This research not only helps to overcome film formation challenges, but also enables stable Cs2Ag0.95Ga0.05BiBr6 to be established as a high-performance material for photovoltaic applications. Overall, our development contributes to the advancement of environmentally friendly solar technologies.

Effect of aliovalent bismuth substitution on structure and optical properties of CsSnBr3

Aliovalent substitution of the B component in ABX₃ metal halides has often been proposed to modify the band gap and thus the photovoltaic properties, but details about the resulting structure have remained largely unknown. Here, we examine these effects in Bi-substituted CsSnBr₃. Powder X-ray diffraction (XRD) and solid-state ¹¹⁹Sn, ¹³³Cs and ²⁰⁹Bi nuclear magnetic resonance (NMR) spectroscopy were carried out to infer how Bi substitution changes the structure of these compounds. The cubic perovskite structure is preserved upon Bi-substitution, but with disorder in the B site occurring at the atomic level. Bi atoms are randomly distributed as they substitute for Sn atoms with no evidence of Bi segregation. The absorption edge in the optical spectra shifts from 1.8 to 1.2 eV upon Bi-substitution, maintaining a direct band gap according to electronic structure calculations. It is shown that Bi-substitution improves resistance to degradation by inhibiting the oxidation of Sn.

The Effect of 600 keV Ag Ion Irradiation on the Structural, Optical, and Photovoltaic Properties of MAPbBr3 Films for Perovksite Solar Cell Applications

A competitive new technology, organic metallic halide perovskite solar cells feature a wide working area, low manufacturing costs, a long lifespan, and a significant amount of large efficacy of power conversion (PCE). The spin-coating technique was utilized for the fabrication of pure CH₃NH₃PbBr₃ (MAPbBr₃) thin films, and these films are implanted with 600 keV silver (Ag) ions at fluency rate of 6 × 10¹⁴ and 4 × 10¹⁴ ions/cm². XRD analysis confirmed the cubic structure of MAPbBr₃. A high grain size was observed at the fluency rate of 4 × 10¹⁴ ions/cm². The UV-Vis spectroscopic technique was used to calculate the optical properties such as the bandgap energy (E_g), refractive index (n), extinction coefficients (k), and dielectric constant. A direct E_g of 2.44 eV was measured for the pristine film sample, whereas 2.32 and 2.36 eV were measured for Ag ion-implanted films with a 4 × 10¹⁴ and 6 × 10¹⁴ ions/cm² fluence rate, respectively. The solar cells of these films were fabricated. The J_sc was 6.69 mA/cm², FF was 0.80, V_oc was 1.1 V, and the efficiency was 5.87% for the pristine MAPbBr₃-based cell. All of these parameters were improved by Ag ion implantation. The maximum values were observed at a fluency rate of 4 × 10¹⁴ ions/cm², where the V_oc was 1.13 V, FF was 0.75, J_sc was 8.18 mA/cm², and the efficiency was 7.01%.

Bi and Sn Doping Improved the Structural, Optical and Photovoltaic Properties of MAPbI3-Based Perovskite Solar Cells

One of the most amazing photovoltaic technologies for the future is the organic–inorganic lead halide perovskite solar cell, which exhibits excellent power conversion efficiency (PCE) and can be produced using a straightforward solution technique. Toxic lead in perovskite can be replaced by non-toxic alkaline earth metal cations because they keep the charge balance in the material and some of them match the Goldschmidt rule’s tolerance factor. Therefore, thin films of MAPbI₃, 1% Bi and 0%, 0.5%, 1% and 1.5% Sn co-doped MAPbI₃ were deposited on FTO-glass substrates by sol-gel spin-coating technique. XRD confirmed the co-doping of Bi–Sn in MAPbI₃. The 1% Bi and 1% Sn co-doped film had a large grain size. The optical properties were calculated by UV-Vis spectroscopy. The 1% Bi and 1% Sn co-doped film had small E_g, which make it a good material for perovskite solar cells. These films were made into perovskite solar cells. The pure MAPbI₃ film-based solar cell had a current density (J_sc) of 9.71 MA-cm⁻², its open-circuit voltage (V_oc) was 1.18 V, its fill factor (FF) was 0.609 and its efficiency (η) was 6.98%. All of these parameters were improved by the co-doping of Bi–Sn. The cell made from a co-doped MAPbI₃ film with 1% Bi and 1% Sn had a high efficiency (10.03%).

Transfer-Printed Cuprous Iodide (CuI) Hole Transporting Layer for Low Temperature Processed Perovskite Solar Cells

Perovskite solar cells (PSCs) have achieved significantly high power-conversion efficiency within a short time. Most of the devices, including those with the highest efficiency, are based on a n–i–p structure utilizing a (doped) spiro-OMeTAD hole transport layer (HTL), which is an expensive material. Furthermore, doping has its own challenges affecting the processing and performance of the devices. Therefore, the need for low-cost, dopant-free hole transport materials is an urgent and critical issue for the commercialization of PSCs. In this study, n–i–p structure PSCs were fabricated in an ambient environment with cuprous iodide (CuI) HTL, employing a novel transfer-printing technique, in order to avoid the harmful interaction between the perovskite surface and the solvents of CuI. Moreover, in fabricated PSCs, the SnO₂ electron transport layer (ETL) has been incorporated to reduce the processing temperature, as previously reported (n–i–p) devices with CuI HTL are based on TiO₂, which is a high-temperature processed ETL. PSCs fabricated at 80 °C transfer-printing temperature with 20 nm iodized copper, under 1 sun illumination showed a promising efficiency of 8.3%, (J_SC and FF; 19.3 A/cm² and 53.8%), which is comparable with undoped spiro-OMeTAD PSCs and is the highest among the ambient-environment-fabricated PSCs utilizing CuI HTL.