Studies on Preparation and Characterization of Aluminum Nitride-Coated Carbon Fibers and Thermal Conductivity of Epoxy Matrix Composites

Synthesis of Cubic Aluminum Nitride (AlN) Coatings through Suspension Plasma Spray (SPS) Technology

Thermal spraying of aluminum nitride (AlN) is a challenging issue because it decomposes at a high temperature. In this work, the use of suspension plasma spray (SPS) technology is proposed for the in situ synthesis and deposition of cubic-structured AlN coatings on metallic substrates. The effects of the nitriding agent, the suspension liquid carrier, the substrate materials and the standoff distance during deposition by SPS were investigated. The plasma-synthesized coatings were analyzed by X-ray diffraction (XRD), optical microscopy (OM) and scanning electron microscopy (SEM). The results show higher AlN content in the coatings deposited on a carbon steel substrate (~82%) when compared to titanium substrate (~30%) or molybdenum (~15%). Melamine mixed with pure aluminum powder produced AlN-richer coatings of up to 82% when compared to urea mixed with the Al (~25% AlN). Hexadecane was a relatively better liquid carrier than the oxygen-rich liquid carriers such as ethanol or ethylene glycol. When the materials were exposed to a molten aluminum–magnesium alloy at 850 °C for 2 h, the corrosion resistance of the AlN-coated carbon steel substrate showed improved performance in comparison to the uncoated substrate.

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health

The integrity and reliability of surface protective coatings deposited on metal surface could be in-situ monitored via the attractive luminescence sensing technique. In this paper, we report the influence of substrate temperature on the properties of erbium (Er) doped aluminum nitride (AlN) film, which could be applied as a luminescent layer for monitoring the health of multilayered Al/AlN coating. The AlN:Er films were deposited via reactive radio-frequency magnetron sputtering, and the silicon substrate temperature was varied from non-intentional heating up to 400 °C. The composition, morphology, crystalline structure, and dielectric function of the AlN:Er films deposited under these different substrate temperature conditions were studied. These properties of the AlN:Er films show strong correlation with the substrate temperature maintained during film fabrication. The obtained AlN:Er films, without further annealing, exhibited photoluminescence peaks of the Er³⁺ ions in the visible wavelength range and the strongest photoluminescence intensity was observed for the AlN:Er film deposited with the temperature of substrate kept at 300 °C. The results demonstrated in this work offer guidance to optimize the substrate temperature for the deposition of AlN:Er film for future application of this sensing technique to thin metal components.