Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Recent Achievements for Flexible Encapsulation Films Based on Atomic/Molecular Layer Deposition

The purpose of this paper is to review the research progress in the realization of the organic-inorganic hybrid thin-film packaging of flexible organic electroluminescent devices using the PEALD (plasma-enhanced atomic layer deposition) and MLD (molecular layer deposition) techniques. Firstly, the importance and application prospect of organic electroluminescent devices in the field of flexible electronics are introduced. Subsequently, the principles, characteristics and applications of PEALD and MLD technologies in device packaging are described in detail. Then, the methods and process optimization strategies for the preparation of organic-inorganic hybrid thin-film encapsulation layers using PEALD and MLD technologies are reviewed. Further, the research results on the encapsulation effect, stability and reliability of organic-inorganic hybrid thin-film encapsulation layers in flexible organic electroluminescent devices are discussed. Finally, the current research progress is summarized, and the future research directions and development trends are prospected.

Enhancing control in spatial atomic layer deposition: insights into precursor diffusion, geometric parameters, and CVD mitigation strategies

In recent years, spatial atomic layer deposition (SALD) has gained significant attention for its remarkable capability to accelerate ALD growth by several orders of magnitude compared to conventional ALD, all while operating at atmospheric pressure. Nevertheless, the persistent challenge of inadvertent contributions from chemical vapor deposition (CVD) in SALD processes continues to impede control over film homogeneity, and properties. This research underscores the often-overlooked influence of diffusion coefficients and important geometric parameters on the close-proximity SALD growth patterns. We introduce comprehensive physical models complemented by finite element method simulations for fluid dynamics to elucidate SALD growth kinetics across diverse scenarios. Our experimental findings, in alignment with theoretical models, reveal distinctive growth rate trends in ZnO and SnO2films as a function of the deposition gap. These trends are ascribed to precursor diffusion effects within the SALD system. Notably, a reduced deposition gap proves advantageous for both diffusive and low-volatility bulky precursors, minimizing CVD contributions while enhancing precursor chemisorption kinetics. However, in cases involving highly diffusive precursors, a deposition gap of less than 100μm becomes imperative, posing technical challenges for large-scale applications. This can be ameliorated by strategically adjusting the separation distance between reactive gas outlets to mitigate CVD contributions, which in turn leads to a longer deposition time. Furthermore, we discuss the consequential impact on material properties and propose a strategy to optimize the injection head to control the ALD/CVD growth mode.

Exploring the degradation of silver nanowire networks under thermal stress by coupling in situ X-ray diffraction and electrical resistance measurements

The thermal instability of silver nanowires (AgNWs) leads to a significant increase of the electrical resistance of AgNW networks. A better understanding of the relationship between the structural and electrical properties of AgNW networks is primordial for their efficient integration as transparent electrodes (TEs) for next-generation flexible optoelectronics. Herein, we investigate the in situ evolution of the main crystallographic parameters (i.e. integrated intensity, interplanar spacing and peak broadening) of two Ag-specific Bragg peaks, (111) and (200), during a thermal ramp up to 400 °C through in situ X-ray diffraction (XRD) measurements, coupled with in situ electrical resistance measurements on the same AgNW network. First, we assign the (111) and (200) peaks of χ-scans to each five crystallites within AgNWs using a rotation matrix model. Then, we show that the thermal transition of bare AgNW networks occurs within a temperature range of about 25 °C for the electrical properties, while the structural transition spans over 200 °C. The effect of a protective tin oxide coating (SnO2) on AgNW networks is also investigated through this original in situ coupling approach. For SnO2-coated AgNW networks, the key XRD signatures from AgNWs remain constant, since the SnO2 coating prevents Ag atomic surface diffusion, and thus morphological instability (i.e. spheroidization). Moreover, the SnO2 coating does not affect the strain of both (111) and (200) planes. The thermal expansion for bare and SnO2-coated AgNW networks appears very similar to the thermal expansion of bulk Ag. Our findings provide insights into the underlying failure mechanisms of AgNW networks subjected to thermal stress, helping researchers to develop more robust and durable TEs based on metallic nanowire networks.

Atmospheric-pressure atomic layer deposition: recent applications and new emerging applications in high-porosity/3D materials

Atomic layer deposition (ALD) is a widely recognized technique for depositing ultrathin conformal films with excellent thickness control at Ångström or (sub)monolayer level. Atmospheric-pressure ALD is an upcoming ALD process with a potentially lower ownership cost of the reactor. In this review, we provide a comprehensive overview of the recent applications and development of ALD approaches emphasizing those based on operation at atmospheric pressure. Each application determines its own specific reactor design. Spatial ALD (s-ALD) has been recently introduced for the commercial production of large-area 2D displays, the surface passivation and encapsulation of solar cells and organic light-emitting diode (OLED) displays. Atmospheric temporal ALD (t-ALD) has opened up new emerging applications such as high-porosity particle coatings, functionalization of capillary columns for gas chromatography, and membrane modification in water treatment and gas purification. The challenges and opportunities for highly conformal coating on porous substrates by atmospheric ALD have been identified. We discuss in particular the pros and cons of both s-ALD and t-ALD in combination with their reactor designs in relation to the coating of 3D and high-porosity materials.

Atmospheric atomic layer deposition of SnO2 thin films with tin(II) acetylacetonate and water

Due to its unique optical, electrical, and chemical properties, tin dioxide (SnO₂) thin films attract enormous attention as a potential material for gas sensors, catalysis, low-emissivity coatings for smart windows, transparent electrodes for low-cost solar cells, etc. However, the low-cost and high-throughput fabrication of SnO₂ thin films without producing corrosive or toxic by-products remains challenging. One appealing deposition technique, particularly well-adapted to films presenting nanometric thickness is atomic layer deposition (ALD). In this work, several metalorganic tin-based complexes, namely, tin(IV) tert-butoxide, bis[bis(trimethylsilyl)amino] tin(II), dibutyltin diacetate, tin(II) acetylacetonate, tetrakis(dimethylamino) tin(IV), and dibutyltin bis(acetylacetonate), were explored thanks to DFT calculations. Our theoretical calculations suggest that the three last precursors are very appealing for ALD of SnO₂ thin films. The potential use of these precursors for atmospheric-pressure spatial atomic layer deposition (AP-SALD) is also discussed. For the first time, we experimentally demonstrate the AP-SALD growth of SnO₂ thin films using tin(II) acetylacetonate (Sn(acac)₂) and water. We observe that Sn(acac)₂ exhibits efficient ALD activity with a relatively large ALD temperature window (140-200 °C), resulting in a growth rate of 0.85 ± 0.03 Å per cyc. XPS analyses show a single Sn 3d_5/2 characteristic peak for Sn⁴⁺ at 486.8 ± 0.3 eV, indicating that a pure SnO₂ phase is obtained within the ALD temperature window. The as-deposited SnO₂ thin films are in all cases amorphous, and film conductivity increases with the deposition temperature. Hall effect measurements confirm the n-type nature of SnO₂ with a free electron density of about 8 × 10¹⁹ cm^-3, electron mobility up to 11.2 cm² V^-1 s^-1, and resistivity of 7 × 10^-3 Ω cm for samples deposited at 270 °C.

Highly Sensitive Self-Actuated Zinc Oxide Resonant Microcantilever Humidity Sensor

A resonant microcantilever sensor is fabricated from a zinc oxide (ZnO) thin film, which serves as both the structural and sensing layers. An open-air spatial atomic layer deposition technique is used to deposit the ZnO layer to achieve a ∼200 nm thickness, an order of magnitude lower than the thicknesses of conventional microcantilever sensors. The reduction in the number of layers, in the cantilever dimensions, and its overall lower mass lead to an ultrahigh sensitivity, demonstrated by detection of low humidity levels. A maximum sensitivity of 23649 ppm/% RH at 5.8% RH is observed, which is several orders of magnitude larger than those reported for other resonant humidity sensors. Furthermore, the ZnO cantilever sensor is self-actuated in air, an advantageous detection mode that enables simpler and lower-power-consumption sensors.

In-situ observation of nucleation and property evolution in films grown with an atmospheric pressure spatial atomic layer deposition system

Atmospheric pressure—spatial atomic layer deposition (AP-SALD) is a promising open-air deposition technique for high-throughput manufacturing of nanoscale films, yet the nucleation and property evolution in these films has not been studied in detail. In this work, in situ reflectance spectroscopy was implemented in an AP-SALD system to measure the properties of Zinc oxide (ZnO) and Aluminum oxide (Al2O3) films during their deposition. For the first time, this revealed a substrate nucleation period for this technique, where the length of the nucleation time was sensitive to the deposition parameters. The in situ characterization of thickness showed that varying the deposition parameters can achieve a wide range of growth rates (0.1–3 nm/cycle), and the evolution of optical properties throughout film growth was observed. For ZnO, the initial bandgap increased when deposited at lower temperatures and subsequently decreased as the film thickness increased. Similarly, for Al2O3 the refractive index was lower for films deposited at a lower temperature and subsequently increased as the film thickness increased. Notably, where other implementations of reflectance spectroscopy require previous knowledge of the film’s optical properties to fit the spectra to optical dispersion models, the approach developed here utilizes a large range of initial guesses that are inputted into a Levenberg-Marquardt fitting algorithm in parallel to accurately determine both the film thickness and complex refractive index.