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Sundaresan C, Vebber MC, Brusso JL, Tao Y, Alem S, Lessard BH. Low-Cost Silicon Phthalocyanine as a Non-Fullerene Acceptor for Flexible Large Area Organic Photovoltaics. ACS OMEGA 2023; 8:1588-1596. [PMID: 36643570 PMCID: PMC9835793 DOI: 10.1021/acsomega.2c07131] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2022] [Accepted: 12/16/2022] [Indexed: 06/17/2023]
Abstract
We demonstrate large-area (1 cm2) organic photovoltaic (OPVs) devices based on bis(tri-n-butylsilyl oxide) silicon phthalocyanine (3BS)2-SiPc as a non-fullerene acceptor (NFA) with low synthetic complexity paired with poly(3-hexylthiophene) (P3HT) as a donor polymer. Environment-friendly nonhalogenated solvents were used to process large area OPVs on flexible indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates. An alternate sequentially (Alt-Sq) blade-coated active layer with bulk heterojunction-like morphology is obtained when using (3BS)2-SiPc processing with o-xylene/1,3,5-trimethylbenzene solvents. The sequential (Sq) active layer is prepared by first blade-coating (3BS)2-SiPc solution followed by P3HT coated on the top without any post-treatment. The conventional sequentially (Sq) blade-coated active layer presents very low performance due to the (3BS)2-SiPc bottom layer being partially washed off by processing the top layer of P3HT. In contrast, alternate sequentially (Alt-Sq) blade-coated layer-by-layer film shows even better device performance compared to the bulk heterojunction (BHJ) active layer. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) and atomic force microscopy (AFM) reveal that the Alt-Sq processing of the active layer leads to a BHJ-like morphology with a well-intermixed donor-acceptor component in the active layer while providing a simpler processing approach to low-cost and large-scale OPV production.
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Affiliation(s)
- Chithiravel Sundaresan
- Department
of Chemical & Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ONK1N 6N5, Canada
- Advanced
Electronics and Photonics Research Centre, National Research Council of Canada, Ottawa, ONK1A
0R6, Canada
| | - Mário C. Vebber
- Department
of Chemical & Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ONK1N 6N5, Canada
| | - Jaclyn L. Brusso
- Department
of Chemistry and Biomolecular Science, University
of Ottawa, 150 Louis-Pasteur Pvt, Ottawa, ONK1N 6N5, Canada
| | - Ye Tao
- Advanced
Electronics and Photonics Research Centre, National Research Council of Canada, Ottawa, ONK1A
0R6, Canada
| | - Salima Alem
- Advanced
Electronics and Photonics Research Centre, National Research Council of Canada, Ottawa, ONK1A
0R6, Canada
| | - Benoît H. Lessard
- Department
of Chemical & Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ONK1N 6N5, Canada
- School
of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward AvenueOttawa, ONK1N 6N5, Canada
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Faure MM, Dindault C, Rice NA, Lessard BH. Layer-by-Layer Organic Photovoltaic Solar Cells Using a Solution-Processed Silicon Phthalocyanine Non-Fullerene Acceptor. ACS OMEGA 2022; 7:7541-7549. [PMID: 35284724 PMCID: PMC8908506 DOI: 10.1021/acsomega.1c05715] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2021] [Accepted: 02/10/2022] [Indexed: 05/22/2023]
Abstract
Silicon phthalocyanines (SiPcs) are promising, inexpensive, and easy to synthesize non-fullerene acceptor (NFA) candidates for all-solution sequentially processed layer-by-layer (LbL) organic photovoltaic (OPV) devices. Here, we report the use of bis(tri-n-butylsilyl oxide) SiPc ((3BS)2-SiPc) paired with poly(3-hexylthiophene) (P3HT) and poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) donors in an LbL OPV structure. Using a direct architecture, P3HT/(3BS)2-SiPc LbL devices show power conversion efficiencies (PCEs) up to 3.0%, which is comparable or better than the corresponding bulk heterojunction (BHJ) devices with either (3BS)2-SiPc or PC61BM. PBDB-T/(3BS)2-SiPc LbL devices resulted in PCEs up to 3.3%, with an impressive open-circuit voltage (V oc) as high as 1.06 V, which is among the highest V oc obtained employing the LbL approach. We also compared devices incorporating vanadium oxide (VOx) or poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a hole transporting layer and found that VOx modified the donor layer morphology and led to improved V oc. Probing the composition as a function of film layer depths revealed a similar distribution of active material for both BHJ and LbL structures when using (3BS)2-SiPc as an NFA. These findings suggest that (3BS)2-SiPc is a promising NFA that can be processed using the LbL technique, an inherently easier fabrication methodology for large-area production of OPVs.
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Affiliation(s)
- Marie
D. M. Faure
- Department
of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario, Canada K1N 6N5
| | - Chloé Dindault
- Department
of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario, Canada K1N 6N5
| | - Nicole A. Rice
- Department
of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario, Canada K1N 6N5
| | - Benoît H. Lessard
- Department
of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario, Canada K1N 6N5
- School
of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward Ave., Ottawa, Ontario, Canada K1N 6N5
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Lessard BH. The Rise of Silicon Phthalocyanine: From Organic Photovoltaics to Organic Thin Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:31321-31330. [PMID: 34197065 DOI: 10.1021/acsami.1c06060] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Silicon phthalocyanines are emerging n-type semiconductors for use in organic photovoltaics (OPVs) and organic thin-film transistors (OTFTs). Their low synthetic complexity paired with their versatile axial group facilitates the fine-tuning of their chemical properties, solution properties and processing characteristics without significantly affecting their frontier orbital levels or their absorption properties. The crystal engineering and film forming characteristics of silicon phthalocyanine semiconductors can be tuned through appropriate axial group functionalization, therefore facilitating their integration into both OTFTs and OPVs by solution processing or vapor deposition. This Spotlight on Applications will discuss recent advances in the integration of this exciting class of phthalocyanine into OTFTs and OPVs and highlights their promising future.
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Affiliation(s)
- Benoît H Lessard
- Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, Ontario, Canada K1N 6N5
- School of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward, Ottawa, Ontario, Canada K1N 6N5
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Torimtubun AA, Follana-Berná J, Sánchez JG, Pallarès J, Sastre-Santos Á, Marsal LF. Fluorinated Zinc and Copper Phthalocyanines as Efficient Third Components in Ternary Bulk Heterojunction Solar Cells. ACS APPLIED ENERGY MATERIALS 2021; 4:5201-5211. [PMID: 36426379 PMCID: PMC9677599 DOI: 10.1021/acsaem.1c00734] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Fluorinated zinc and copper metallophthalocyanines MPcF48 are synthesized and incorporated as third component small molecules in ternary organic solar cells (TOSCs). To enable the high performance of TOSCs, maximizing short-circuit current density (J SC) is crucial. Ternary bulk heterojunction blends, consisting of a polymer donor PTB7-Th, fullerene acceptors PC70BM, and a third component MPcF48, are formulated to fabricate TOSCs with a device architecture of ITO/PFN/active layer/V2O5/Ag. Employing copper as metal atom substitution in the third component of TOSCs enhances J SC as a result of complementary absorption spectra in the near-infrared region. In combination with J SC enhancement, suppressed charge recombination, improved exciton dissociation and charge carrier collection efficiency, and better morphology lead to a slightly improved fill factor (FF), resulting in a 7% enhancement of PCE than those of binary OSCs. In addition to the increased PCE, the photostability of TOSCs has also been improved by the appropriate addition of CuPcF48. Detailed studies imply that metal atom substitution in phthalocyanines is an effective way to improve J SC, FF, and thus the performance and photostability of TOSCs.
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Affiliation(s)
- Alfonsina
Abat Amelenan Torimtubun
- Department
of Electric, Electronic and Automatic Engineering, Universitat Rovira i Virgili, Av. Països Catalans 26, Tarragona 43007, Spain
| | - Jorge Follana-Berná
- Área
de Química Orgánica, Instituto de Bioingeniería, Universidad Miguel Hernández de Elche, Av. de la Universidad s/n, Elche 03202, Spain
| | - José G. Sánchez
- Department
of Electric, Electronic and Automatic Engineering, Universitat Rovira i Virgili, Av. Països Catalans 26, Tarragona 43007, Spain
| | - Josep Pallarès
- Department
of Electric, Electronic and Automatic Engineering, Universitat Rovira i Virgili, Av. Països Catalans 26, Tarragona 43007, Spain
| | - Ángela Sastre-Santos
- Área
de Química Orgánica, Instituto de Bioingeniería, Universidad Miguel Hernández de Elche, Av. de la Universidad s/n, Elche 03202, Spain
| | - Lluis F. Marsal
- Department
of Electric, Electronic and Automatic Engineering, Universitat Rovira i Virgili, Av. Països Catalans 26, Tarragona 43007, Spain
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Socol M, Preda N. Hybrid Nanocomposite Thin Films for Photovoltaic Applications: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1117. [PMID: 33925952 PMCID: PMC8145415 DOI: 10.3390/nano11051117] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/05/2021] [Revised: 04/22/2021] [Accepted: 04/22/2021] [Indexed: 02/06/2023]
Abstract
Continuing growth in global energy consumption and the growing concerns regarding climate change and environmental pollution are the strongest drivers of renewable energy deployment. Solar energy is the most abundant and cleanest renewable energy source available. Nowadays, photovoltaic technologies can be regarded as viable pathways to provide sustainable energy generation, the achievement attained in designing nanomaterials with tunable properties and the progress made in the production processes having a major impact in their development. Solar cells involving hybrid nanocomposite layers have, lately, received extensive research attention due to the possibility to combine the advantages derived from the properties of both components: flexibility and processability from the organic part and stability and optoelectronics features from the inorganic part. Thus, this review provides a synopsis on hybrid solar cells developed in the last decade which involve composite layers deposited by spin-coating, the most used deposition method, and matrix-assisted pulsed laser evaporation, a relatively new deposition technique. The overview is focused on the hybrid nanocomposite films that can use conducting polymers and metal phthalocyanines as p-type materials, fullerene derivatives and non-fullerene compounds as n-type materials, and semiconductor nanostructures based on metal oxide, chalcogenides, and silicon. A survey regarding the influence of various factors on the hybrid solar cell efficiency is given in order to identify new strategies for enhancing the device performance in the upcoming years.
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