Recent Advances and Challenges in Halide Perovskite Crystals in Optoelectronic Devices from Solar Cells to Other Applications

Designing an efficient lead-free perovskite solar cell with green-synthesized CuCrO2 and CeO2 as carrier transport materials

With increased efficiency, simplicity in manufacturing, adaptability, and flexibility, solar cells constructed from organic metal halide perovskite (PVK) have recently attained great eminence. Lead, a poisonous substance, present in a conventional PVK impacts the environment and prevents commercialization. To deal with this issue, a number of toxicity-free PVK-constructed solar cells have been suggested. Nevertheless, inherent losses mean the efficiency conversion accomplished from these devices is inadequate. Therefore, a thorough theoretical investigation is indispensable for comprehending the losses to improve efficiency. The findings of a unique modelling method for organic lead-free solar cells, namely methylammonium tin iodide (MASnI3), are investigated to reach the maximum practical efficiencies. The layer pertinent to MASnI3 was constructed as a sandwich between a bio-synthesized electron transport layer (ETL) of CeO2 and a hole transport layer (HTL) of CuCrO2 in the designed perovskite solar cells (PSCs). In this study, the use of algae-synthesized Au in the back contacts has been proposed. To obtain the maximum performance, the devices are further analyzed and optimized for active layer thickness, working temperature, total and interface defect density analysis, impedance analysis (Z'-Z), and capacitance-voltage (C-V), respectively. An optimal conversion efficiency of 26.60% has been attained for an MASnI3-constructed PSC. The study findings may open the door to a lead-free PSC through improved conversion efficiencies.

Review on Perovskite Semiconductor Field‑Effect Transistors and Their Applications

Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.

Recent Advances in Silver Nanowires Electrodes for Flexible Organic/Perovskite Light-Emitting Diodes

Flexible organic light-emitting diodes and perovskite light-emitting diodes (PeLEDs) have been investigated as an innovative category of revolutionary LED devices for next-generation flat display and lighting applications. A transparent conductive electrode is a key component in flexible OLEDs and PeLEDs, and has been the limitation of the development in this area. Silver nanowires (AgNWs) have been regarded as the most suitable alternative material in TCEs, due to the economical solution synthesis and compatibility with roll-to-roll technology. This mini-review addresses the advances in silver nanowires electrodes for flexible organic/perovskite light-emitting diodes, and the relationship between electrode optimization and device performance is demonstrated. Moreover, the potential strategies and perspectives for their further development of AgNWs-based flexible OLEDs and PeLEDs are presented.

High-Performance Near-Infrared Photodetectors Based on the Synergy Effect of Short Wavelength Light Filter and Long Wavelength Response of a Perovskite/Polymer Hybrid Structure

Near-infrared photodetectors (NIR-PDs) are widely used in communications, biomedical imaging, and national defense. Here we report a new strategy to prepare a short wavelength light filter based NIR-PDs by introducing an interface layer between the perovskite layer and the polymer layer to achieve the selective passage of carriers. Through the synergistic effect of the perovskite and the interface layer, the short wavelength light component in the signal spectrum is effectively filtered out. The organic polymer layer with a bulk heterojunction structure is applied to realize the absorption and conversion of near-infrared light. The prepared device achieves a maximum external quantum efficiency of 83.7% without bias, a high specific detectivity of 1.52 × 10¹³ Jones, an NIR responsivity of 0.577A/W, and a short response time of 1.73/0.97 μs within the detection range from 770 to 900 nm. All these properties show great advantages compared with other perovskite/polymer hybrid NIR photodetectors that have been reported. This innovative strategy provides a new way to prepare high-performance near-infrared photodetectors.

Long-Range Interfacial Charge Carrier Trapping in Halide Perovskite-C60 and Halide Perovskite-TiO2 Donor-Acceptor Films

Interfacial electron transfer across perovskite-electron acceptor heterojunctions plays a significant role in the power-conversion efficiency of perovskite solar cells. Thus, electron donor-acceptor thin films of halide perovskite nanocrystals receive considerable attention. Nevertheless, understanding and optimizing distance- and thickness-dependent electron transfer in perovskite-electron acceptor heterojunctions are important. We reveal the distance-dependent and diffusion-controlled interfacial electron transfer across donor-acceptor heterojunction films formed by formamidinium or cesium lead bromide (FAPbBr₃/CsPbBr₃) perovskite nanocrystals with TiO₂/C₆₀. Self-assembled nanocrystal films prepared from FAPbBr₃ show a longer photoluminescence lifetime than a solution, showing a long-range carrier migration. The acceptors quench the photoluminescence intensity but not the lifetime in a solution, revealing a static electron transfer. Conversely, the electron transfer in the films changes from dynamic to static by moving toward the donor-acceptor interface. While radiative recombination dominates the electron transfer at 800 μm or farther, the acceptors scavenge the photogenerated carriers within 100 μm. This research highlights the significance of interfacial electron transfer in perovskite films.