Solution-Based Synthesis of Sulvanite Cu3TaS4 and Cu3TaSe4 Nanocrystals

Direct vapour transport grown Cu2SnS3 crystals: exploring structural, elastic, optical, and electronic properties

Copper tin sulphide (Cu2SnS3) (CTS) has emerged as a potent material for applications in photovoltaic, thermoelectric, electrochemical, biological, and other fields. CTS has superior properties such as non-toxicity, direct bandgap, p-type conductivity, variable crystal structure, alterable morphology and ease of synthesis, and it is a better substitute for conventional semiconductor materials. In the present work, CTS crystals were grown using direct vapour transport. Investigation through X-ray diffraction showed that the as-grown CTS crystals possessed a cubic unit cell structure with a = b = c = 5.403 Å. The analysis of the binding energies and composition of constituents of the as-grown CTS crystals via X-ray photoelectron spectroscopy confirmed the presence of Cu1+, Sn4+ and S2-. The experimental bandgap of CTS crystals is 1.23 eV, which was confirmed by diffuse reflectance spectroscopy. The investigation of elastic, optical, thermal and electronic properties of CTS crystals was carried out via density functional theory employing generalized gradient approximation with the Perdew-Burke-Ernzerhof exchange-relationship functional. The first-ever analysis of the temperature-dependent elastic properties of CTS crystals revealed greater stability at elevated temperature (953 K). Dielectric properties, reflectivity, refractive index, loss function, extinction and absorption coefficients of CTS crystals were computed and analyzed in detail. The evaluation of the electronic band structure with density of states revealed valence band maximum and conduction band energy level contributions, showing a bandgap of 1.2 eV. The obtained results are discussed in detail.

Size-Controlled Cu3VSe4 Nanocrystals as Cathode Material in Platinum-Free Dye-Sensitized Solar Cells

In this work, we report the first single-step, size-controlled synthesis of Cu3VSe4 cuboidal nanocrystals, with the longest dimension ranging from 9 to 36 nm, and their use in replacing the platinum counter electrode in dye-sensitized solar cells. Cu3VSe4, a ternary semiconductor from the class of sulvanites, is theoretically predicted to have good hole mobility, making it a promising candidate for charge transport in solar photovoltaic devices. The identity and crystalline purity of the Cu3VSe4 nanocrystals were validated by X-ray powder diffraction (XRD) and Raman spectroscopy. The particle size was determined from the XRD data using the Williamson-Hall equation and was found in agreement with the transmission electron microscopy imaging. Based on the electrochemical activity of the Cu3VSe4 nanocrystals, studied by cyclic voltammetry, the nanomaterials were further employed for fabricating counter electrodes (CEs) in Pt-free dye-sensitized solar cells. The counter electrodes were prepared from Cu3VSe4 nanocrystals as thin films, and the charge transfer kinetics were studied by electrochemical impedance spectroscopy. The work demonstrates that Cu3VSe4 counter electrodes successfully replace platinum in DSSCs. CEs fabricated with the Cu3VSe4 nanocrystals having an average particle size of 31.6 nm outperformed Pt, leading to DSSCs with the highest power conversion efficiency (5.93%) when compared with those fabricated with the Pt CE (5.85%).

Colloidal Synthesis and Photocatalytic Properties of Cu3NbS4 and Cu3NbSe4 Sulvanite Nanocrystals

Niobium sulvanites Cu3NbX4 (X = S, Se) have been theoretically predicted as promising candidates for solar photovoltaics and photocatalytic water splitting. This report outlines the first synthesis of Cu3NbS4 and Cu3NbSe4 in a nanocrystalline form. The crystal structures were investigated by X-ray diffraction, identity was confirmed by Raman spectroscopy, and the optoelectronic properties and morphology of Cu3NbS4 and Cu3NbSe4 nanocrystals were examined by UV-vis spectroscopy and transmission electron microscopy, respectively. To gain insight into the Cu3NbX4 formation, a mechanistic study was conducted for Cu3NbSe4 monitoring the nanoparticles' formation as a function of reaction time. Methylene blue photodegradation tests were conducted to evaluate the photoactivity of Cu3NbS4 and Cu3NbSe4. The degradation rates, 2.81 × 10-2 min-1 and 1.22 × 10-2 min-1 proved the photocatalysts' potential of nanoscale Cu3NbX4.

Pressure-Induced Enhanced Optical Absorption in Sulvanite Compound Cu3TaX4 (X = S, Se, and Te): An ab Initio Study

Ab initio study on the family of ternary copper chalcogenides Cu₃TaX₄ (X = S, Se, and Te) is performed to investigate the suitability of these compounds to applications as photovoltaic absorber materials. The density functional theory based full potential linearized augmented plane wave method (FP-LAPW method) is employed for computational purposes. The electronic structure and optical properties are determined including electron-electron interaction and spin-orbit coupling (SOC), within the generalized gradient approximation plus Hubbard U (GGA+U) and GGA+U+SOC approximation. The large optical band gaps of Cu₃TaS₄ and Cu₃TaSe₄ considered ineffective for absorber materials, and also the hole effective mass has been modulated through applied pressure. These materials show extreme resistance to external pressure, and are found to be stable up to a pressure range of 10 GPa, investigated using phonon dispersion calculations. The observed optical properties and the absorption coefficients within the visible-light spectrum make these compounds promising materials for photovoltaic applications. The calculated energy and optical band gaps are consistent with the available literature and are compared with the experimental results where available.

Solution-phase controlled synthesis of Cu3NbSe4 nanocrystals for optoelectronic applications

Cu3NbSe4 nanocrystals with a cubic phase, monodisperse size and uniform shape synthesized by a facile colloidal method exhibit excellent optoelectronic properties.

Sulvanites: The Promise at the Nanoscale

The class of ternary copper chalcogenides Cu3MX4 (M = V, Nb, Ta; X = S, Se, Te), also known as the sulvanite family, has attracted attention in the past decade as featuring promising materials for optoelectronic devices, including solar photovoltaics. Experimental and theoretical studies of these semiconductors have provided much insight into their properties, both in bulk and at the nanoscale. The recent realization of sulvanites at the nanoscale opens new avenues for the compounds toward printable electronics. This review is aimed at the consideration of synthesis methods, relevant properties and the recent developments of the most important sulvanites.