Ga-Doped ZnO Coating—A Suitable Tool for Tuning the Electrode Properties in the Solar Cells with CdS/ZnS Core-Shell Quantum Dots

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries.

Recent Criterion on Stability Enhancement of Perovskite Solar Cells

Perovskite solar cells (PSCs) have captured the attention of the global energy research community in recent years by showing an exponential augmentation in their performance and stability. The supremacy of the light-harvesting efficiency and wider band gap of perovskite sensitizers have led to these devices being compared with the most outstanding rival silicon-based solar cells. Nevertheless, there are some issues such as their poor lifetime stability, considerable J–V hysteresis, and the toxicity of the conventional constituent materials which restrict their prevalence in the marketplace. The poor stability of PSCs with regard to humidity, UV radiation, oxygen and heat especially limits their industrial application. This review focuses on the in-depth studies of different direct and indirect parameters of PSC device instability. The mechanism for device degradation for several parameters and the complementary materials showing promising results are systematically analyzed. The main objective of this work is to review the effectual strategies of enhancing the stability of PSCs. Several important factors such as material engineering, novel device structure design, hole-transporting materials (HTMs), electron-transporting materials (ETMs), electrode materials preparation, and encapsulation methods that need to be taken care of in order to improve the stability of PSCs are discussed extensively. Conclusively, this review discusses some opportunities for the commercialization of PSCs with high efficiency and stability.