Comparative Hybrid Hartree-Fock-DFT Calculations of WO2-Terminated Cubic WO3 as Well as SrTiO3, BaTiO3, PbTiO3 and CaTiO3 (001) Surfaces

Kabatas MA, Rezzouk A. Influence of the Hubbard U Correction on the Electronic Properties and Chemical Bands of the Cubic (Pm3¯m) Phase of SrTiO3 Using GGA/PBE and LDA/CA-PZ Approximations

By using DFT simulations employing the GGA/PBE and LDA/CA-PZ approximations, the effects of the Hubbard U correction on the crystal structure, electronic properties, and chemical bands of the cubic phase (Pm3¯m) of STO were investigated. Our findings showed that the cubic phase (Pm3¯m) STO's band gaps and lattice parameters/volume are in reasonably good accordance with the experimental data, supporting the accuracy of our model. By applying the DFT + U method, we were able to obtain band gaps that were in reasonably good agreement with the most widely used experimental band gaps of the cubic (Pm3¯m) phase of STO, which are 3.20 eV, 3.24 eV, and 3.25 eV. This proves that the Hubbard U correction can overcome the underestimation of the band gaps induced by both GGA/PBE and LDA/CA-PZ approximations. On the other hand, the Sr-O and Ti-O bindings appear predominantly ionic and covalent, respectively, based on the effective valence charges, electron density distribution, and partial density of states analyses. In an attempt to enhance the performance of STO for new applications, these results might also be utilized as theoretical guidance, benefitting from our precise predicted values of the gap energies of the cubic phase (Pm3¯m).

Achieving Ultrahigh Efficiency Vacancy-Ordered Double Perovskite Microcrystals via Ionic Liquids

Lead-free perovskites have gained much interest for photovoltaic and optoelectronic applications. But instability and low quantum efficiency significantly limit their prospects for future applications. Here, a general route is reported to synthesize highly stable lead-free perovskites on a large scale with remarkably enhanced quantum efficiency. Two typical vacancy-ordered double perovskites (Cs₂ ZrCl₆ and Cs₂ SnCl₆ ) and their corresponding Bi³⁺ or Sb³⁺ doped samples are synthesized in ionic liquids (ILs) solutions via a simple solution method. These prepared perovskite samples all exhibit high-quality crystalline structures and their photoluminescence quantum yields (PLQYs) all show an increase close to 200% compared to the samples prepared in the hydrochloric acid system. The PLQY of Sb-doped Cs₂ ZrCl₆ with excellent thermal stability can reach up to 90.2%, which is the highest value reported for this system (Cs₂ ZrCl₆ :Sb). Density functional theory calculations reveal that the corresponding interaction between the ILs and the samples can effectively improve the crystal quality and reduce energy loss. The potential applications of the prepared samples for high-performance white light-emitting diodes and optical anti-counterfeiting are also demonstrated. The findings provide a straightforward way to obtain ultrahigh quantum efficiency vacancy-ordered double perovskites with good thermal stability and excellent optoelectronic properties.

Atomic-Scale Tracking of Dynamic Nucleation and Growth of an Interfacial Lead Nanodroplet

Revealing the evolutional pathway of the nucleation and crystallization of nanostructures at the atomic scale is crucial for understanding the complex growth mechanisms at the early stage of new substances and spices. Real-time discrimination of the atomic mechanism of a nanodroplet transition is still a formidable challenge. Here, taking advantage of the high temporal and spatial resolution of transmission electron microscopy, the detailed growth pathway of Pb nanodroplets at the early stage of nucleation was directly observed by employing electron beams to induce the nucleation, growth, and fusion process of Pb nanodroplets based on PbTiO3 nanowires. Before the nucleation of Pb nanoparticles, the atoms began to precipitate when they were irradiated by electrons, forming a local crystal structure, and then rapidly and completely crystallized. Small nanodroplets maintain high activity and high density and gradually grow and merge into stable crystals. The whole process was recorded and imaged by HRTEM in real time. The growth of Pb nanodroplets advanced through the classical path and instantaneous droplet coalescence. These results provide an atomic-scale insight on the dynamic process of solid/solid interface, which has implications in thin-film growth and advanced nanomanufacturing.

Charge transfer and metal-insulator transition in (CrO2)m/(TaO2)nsuperlattices

Various interfacial emergent phenomena have been discovered in tunable nanoscale materials, especially in artificially designed epitaxial superlattices. In conjunction, the atomically fabricated superlattices have exhibited a plethora of exceptional properties compared to either bulk materials separately. Here, the (CrO₂)_m/(TaO₂)_nsuperlattices composed of two lattice-matched metallic metal oxides are constructed. With the help of first-principle density-functional theory calculations, a computational and theoretical study of (CrO₂)_m/(TaO₂)_nsuperlattices manifests the interfacial electronic properties in detail. The results suggest that emergent properties result from the charge transfer from the TaO₂to CrO₂layers. At two special ratios of1:1and1:2betweenmandn, the superlattices undergo metal-to-insulator transition. Additionally, the bands below the Fermi level become narrower with the increasing thickness of the CrO₂and TaO₂layers. The study reveals that the electronic reconstruction at the interface of two metallic materials can generate interesting physics, which points the direction for the manipulation of functionalities in artificial superlattices or heterostructures within a few atomic layers.

Ab Initio Computations of O and AO as well as ReO2, WO2 and BO2-Terminated ReO3, WO3, BaTiO3, SrTiO3 and BaZrO3 (001) Surfaces

We present and discuss the results of surface relaxation and rumpling computations for ReO3, WO3, SrTiO3, BaTiO3 and BaZrO3 (001) surfaces employing a hybrid B3LYP or B3PW description of exchange and correlation. In particular, we perform the first B3LYP computations for O-terminated ReO3 and WO3 (001) surfaces. In most cases, according to our B3LYP or B3PW computations for both surface terminations BO2- and O, AO-terminated ReO3, WO3, BaTiO3, SrTiO3 and BaZrO3 (001) surface upper layer atoms shift downwards, towards the bulk, the second layer atoms shift upwards and the third layer atoms, again, shift downwards. Our ab initio computes that ReO3, WO3, BaTiO3, SrTiO3 and BaZrO3 (001) surface Γ-Γ bandgaps are always smaller than their respective bulk Γ-Γ bandgaps. Our first principles compute that B-O atom chemical bond populations in the BaTiO3, SrTiO3 and BaZrO3 perovskite bulk are always smaller than near their BO2-terminated (001) surfaces. Just opposite, the Re-O and W-O chemical bond populations in the ReO3 (0.212e) and WO3 (0.142e) bulk are slightly larger than near the ReO2 and WO2-terminated ReO3 as well as WO3 (001) surfaces (0.170e and 0.108e, respectively).

Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se2Te and SeTe2 Monolayers

Thermoelectric (TE) materials can convert waste heat into electrical energy, which has attracted great interest in recent years. In this paper, the effect of biaxial-tensile strain on the electronic properties, lattice thermal conductivity, and thermoelectric performance of α-phase Se₂Te and SeTe₂ monolayers are calculated based on density-functional theory and the semiclassical Boltzmann theory. The calculated results show that the tensile strain reduces the bandgap because the bond length between atoms enlarges. Moreover, the tensile strain strengthens the scatting rate while it weakens the group velocity and softens the phonon model, leading to lower lattice thermal conductivity k_l. Simultaneously, combined with the weakened k_l, the tensile strain can also effectively modulate the electronic transport coefficients, such as the electronic conductivity, Seebeck coefficient, and electronic thermal conductivity, to greatly enhance the ZT value. In particular, the maximum n-type doping ZT under 1% and 3% strain increases up to six and five times higher than the corresponding ZT without strain for the Se₂Te and SeTe₂ monolayers, respectively. Our calculations indicated that the tensile strain can effectively enhance the thermoelectric efficiency of Se₂Te and SeTe₂ monolayers and they have great potential as TE materials.

Investigations of modulation effect of co-metal ions on the optical properties of the hybrid double perovskites (MA)2AgBi1-xSbxBr6

Composition engineering plays an important role in generating novel properties and decreasing the lead (Pb) toxicity for halide perovskite materials. To find out the modulation effect introduced by the composition engineering, namely,B'-site co-metal ions, in (MA)₂AgBi_1-xSb_xBr₆systems with various Bi/Sb ratios ofx= 0, 0.25, 0.75, 1.00, series of theoretical simulations and analyses are carried out. For the (MA)₂AgBi_1-xSb_xBr₆systems, the Goldschmidt tolerance factortand the octahedral factorμindicate that all samples are in a standard double perovskite structure with alternating AgBr₆and Bi/SbBr₆octahedra. The calculated electronic structures show that the band gap of (MA)₂AgBi_1-xSb_xBr₆decreases with the increase of Sb content, but the indirect band gaps are maintained for all samples. By analyses of the imaginary partɛ₂(ω) of dielectric function and the absorption spectra, we find that all (MA)₂AgBi_1-xSb_xBr₆systems show absorption in the visible-light region. All these results indicate that the composition engineering adopted in this paper is an effective strategy to modulate the optical properties of (MA)₂AgBi_1-xSb_xBr₆systems and may open a new way to put it into applications in the fields of solar cells and other optoelectronic devices.

Self-diffusion mechanisms based defect complexes in MoSi2

MoSi₂is widely concerned due to excellent electrical conductivity, oxidation resistance as a typical transition metal silicide. The high-temperature diffusion behavior is one of the important factors for the degradation of MoSi₂coatings. However, the diffusion mechanism in MoSi₂is still unclear. Prior theoretical work mostly focused on defect formation energy, but these are not consistent with the self-diffusion experiments because the migration behaviors were not considered. Therefore, the purpose of this work was to investigate the microscopic diffusion mechanisms of Mo and Si atoms in MoSi₂using density functional theory and the CI-NEB method. We confirmed that the temperature-dependent vibrational contribution has a significant impact on the defect formation free energy. The isolated point defects in MoSi₂will tend to aggregate to form defect complexes, which participate in the atomic diffusion as mediators. The defect migration behaviors of atoms for vacancy mediated, vacancy complex mediated, and antisite assisted jumps were obtained based on electronic structures analysis. The results show that Si diffusion is mediated by intrasublattice jumps of the nearest neighbor Si vacancies. Moreover, the destroyed covalent Mo-Si bonds by Si vacancies and the non-directional weak metal bonds formed by the Mo antisites and Mo atoms could improve the mobility of the Mo atom which results in the low migration barrier. The agreement between our calculations and the reported experimental results indicates that the dominant diffusion mechanism for Mo atoms is mediated by vacancy complex mediated jumps and antisite assisted jumps. It is concluded that the Si vacancy-based defect complexes are likely the diffusion mediators for Mo atom self-diffusion in MoSi₂. This work provides a deeper insight into the connection between the atomic mechanism and the macroscopic behavior for the diffusion in the MoSi₂, and establishes the basis for further optimizing high-temperature coating materials.

Strain Effects on the Electronic and Thermoelectric Properties of n(PbTe)-m(Bi2Te3) System Compounds

Owing to their low lattice thermal conductivity, many compounds of the n(PbTe)-m(Bi2Te3) homologous series have been reported in the literature with thermoelectric (TE) properties that still need improvement. For this purpose, in this work, we have implemented the band engineering approach by applying biaxial tensile and compressive strains using the density functional theory (DFT) on various compounds of this series, namely Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5. All the fully relaxed Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5 compounds are narrow band-gap semiconductors. When applying strains, a semiconductor-to-metal transition occurs for all the compounds. Within the range of open-gap, the electrical conductivity decreases as the compressive strain increases. We also found that compressive strains cause larger Seebeck coefficients than tensile ones, with the maximum Seebeck coefficient being located at −2%, −6%, −3% and 0% strain for p-type Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5, respectively. The use of the quantum theory of atoms in molecules (QTAIM) as a complementary tool has shown that the van der Waals interactions located between the structure slabs evolve with strains as well as the topological properties of Bi2Te3 and PbBi2Te4. This study shows that the TE performance of the n(PbTe)-m(Bi2Te3) compounds is modified under strains.