Scalable Fabrication of Nanogratings on GaP for Efficient Diffraction of Near-Infrared Pulses and Enhanced Terahertz Generation by Optical Rectification

Easily variable and scalable terahertz pulse source based on tilted-pulse-front pumped semiconductors

A new type of terahertz source containing only two optical elements - a volume phase holographic grating, and a semiconductor nonlinear slab - is proposed. The setup does not require any microstructuring, has only one diffraction order, and can be scaled to large pump sizes without any principal limitations. Furthermore, it can be easily adapted to different pump wavelengths and THz phase-matching frequencies. The Fresnel loss at the boundary of the materials can be significant at conventional pump polarizations (s-pol), but a single-layer anti-reflection (AR) coating can reduce it. Pumping such a setup with polarization in the dispersion plane (p-pol, TM mode) can reduce the effective nonlinear polarization and consequently the terahertz generation efficiency. However, in the absence of AR coating, this reduction is overcompensated by the reduced Fresnel loss.

High-field THz source centered at 2.6 THz

We demonstrate a table-top high-field terahertz (THz) source based on optical rectification of a collimated near-infrared pulse in gallium phosphide (GaP) to produce peak fields above 300 kV/cm with a spectrum centered at 2.6 THz. The experimental configuration, based on tilted-pulse-front phase matching, is implemented with a phase grating etched directly onto the front surface of the GaP crystal. Although the THz generation efficiency starts showing a saturation onset as the near-infrared pulse energy reaches 0.57 mJ, we can expect our configuration to yield THz peak fields up to 866 kV/cm when a 5 mJ generation NIR pulse is used. This work paves the way towards broadband, high-field THz sources able to access a new class of THz coherent control and nonlinear phenomena driven at frequencies above 2 THz.

Compact, low-cost, and broadband terahertz time-domain spectrometer

Terahertz time-domain spectroscopy (THz-TDS) is a powerful technique that enables the characterization of a large range of bulk materials, devices, and products. Although this technique has been increasingly used in research and industry, the standard THz-TDS configuration relying on the use of a near-infrared (NIR) laser source remains experimentally complex and relatively costly, impeding its availability to those without the expertise to build a high-performance setup based on nonlinear optics or without the financial means to acquire a commercial unit. Broadband THz-TDS systems require an even larger financial investment, primarily because the generation and detection of spectral components exceeding 3 THz typically need an ultrafast NIR source delivering sub-100-fs pulses. Such an ultrafast source can be bulky and cost upwards of $100,000. Here, we present a broadband, compact, and portable THz-TDS system comprising three modules that allow for the implementation of a single low-cost ultrafast laser, hence significantly decreasing the overall cost of the system. In the first module, the output laser pulses are spectrally broadened through nonlinear propagation in a polarization-maintaining optical fiber and then temporally compressed to achieve a higher peak power. The other two modules utilize thick nonlinear crystals with periodically patterned surfaces that diffract NIR pulses and optimize the efficiency of THz generation and detection processes by enabling a noncollinear beam geometry. Phase-matching conditions in the nonlinear crystals are controlled by the period of the gratings to gain access to a large spectral THz bandwidth. The whole system, combining these three modules, provides access to a THz spectrum peaking at 3.5 THz and extending beyond 6 THz with a maximum dynamic range of 50 dB for time-resolved spectroscopy applications. We demonstrate the functionality of this configuration by performing THz spectroscopy measurements of water vapor contained within a closed cell. Our compact system design paves the way towards a high-performance, yet cost-effective, THz-TDS system that can be readily used in academia and industry.

Scalable microstructured semiconductor THz pulse sources

In recent years several microstructured lithium niobate THz pulse source were suggested for high-energy applications. Two types of those, the reflective and the transmissive nonlinear slab are adopted here for semiconductors. These new sources are scalable both in THz energy and size. Furthermore, they can outperform the already demonstrated contact grating source in diffraction and THz generation efficiency. Compared to the lithium niobate sources, they are more feasible, thanks to the easier manufacturing and the longer pump wavelength. They can produce intense, nearly single-cycle THz pulses at higher frequencies. With 20 mJ pumping at 1.8 µm wavelength, 45 µJ THz energy, and 17 MV/cm focused peak electric field can be expected at 3 THz phase matching frequency from the transmissive nonlinear echelon slab setup consisting of a 4 mm thick structured plan-parallel gallium phosphide crystal.