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Cheragee SH, Alam MJ. Device modeling and numerical study of a double absorber solar cell using a variety of electron transport materials. Heliyon 2023; 9:e18265. [PMID: 37519688 PMCID: PMC10372323 DOI: 10.1016/j.heliyon.2023.e18265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 07/07/2023] [Accepted: 07/12/2023] [Indexed: 08/01/2023] Open
Abstract
In photovoltaic (PV) technology, halide perovskites are the prospective choice for highly efficient solar absorbers because of their superior optical properties, enhanced efficiency, lightweight, and low cost. In this study, a double absorber solar device using an inorganic perovskite called NaZn0.7Cu0.3Br3 as the top absorber layer and MASnI3 as the bottom absorber layer is analyzed utilizing the SCAPS-1D simulation tool. The primary goal of this study is to look for a device architecture with a higher efficiency level. Here, current matching over two active layers is performed by adjusting the thickness of both active layers. This research focuses on the effect of various electron transport layers, varied absorber layer thicknesses, temperatures, absorber defect density, and metalwork functions on the performance of the proposed photo-voltaic cells. After researching a variety of solar cell architectures, it is revealed that FTO/ZnO/ NaZn0.7Cu0.3Br3 / MASnI3 / CuO /Au arrangement has an open circuit voltage of 1.1373 V, Fill Factor of 82.13%, short circuit current density of 34.71 mA/cm2 and highest power conversion efficiency (PCE) of 32.42%. Here, the simulations of the device indicated that a thickness of around 1 μm for the MASnI3 absorber was optimum. Additionally, the results of the simulations demonstrate that the efficiency of the device rapidly drops with increasing absorbers defect density and temperature, and device structures are steady at 300 K. Finally; any conductor can make the anode if its work function is larger than or equal to 5.10 eV.
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Emelianov NA, Ozerova VV, Fedotov YS, Zhidkov MV, Saifutyarov RR, Malozovskaya MS, Leshchev MS, Golosov EV, Frolova LA, Troshin PA. Direct Nanoscale Visualization of the Electric-Field-Induced Aging Dynamics of MAPbI 3 Thin Films. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4277. [PMID: 37374462 DOI: 10.3390/ma16124277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 06/03/2023] [Accepted: 06/07/2023] [Indexed: 06/29/2023]
Abstract
Perovskite solar cells represent the most attractive emerging photovoltaic technology, but their practical implementation is limited by solar cell devices' low levels of operational stability. The electric field represents one of the key stress factors leading to the fast degradation of perovskite solar cells. To mitigate this issue, one must gain a deep mechanistic understanding of the perovskite aging pathways associated with the action of the electric field. Since degradation processes are spatially heterogeneous, the behaviors of perovskite films under an applied electric field should be visualized with nanoscale resolution. Herein, we report a direct nanoscale visualization of methylammonium (MA+) cation dynamics in methylammonium lead iodide (MAPbI3) films during field-induced degradation, using infrared scattering-type scanning near-field microscopy (IR s-SNOM). The obtained data reveal that the major aging pathways are related to the anodic oxidation of I- and the cathodic reduction of MA+, which finally result in the depletion of organic species in the channel of the device and the formation of Pb. This conclusion was supported by a set of complementary techniques such as time-of-flight secondary ion mass spectrometry (ToF-SIMS), photoluminescence (PL) microscopy, scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) microanalysis. The obtained results demonstrate that IR s-SNOM represents a powerful technique for studying the spatially resolved field-induced degradation dynamics of hybrid perovskite absorbers and the identification of more promising materials resistant to the electric field.
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Affiliation(s)
- Nikita A Emelianov
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Academician Semenov Ave. 1, Chernogolovka 142432, Russia
| | - Victoria V Ozerova
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Academician Semenov Ave. 1, Chernogolovka 142432, Russia
| | - Yuri S Fedotov
- Institute of Solid State Physics, Russian Academy of Sciences, Academician Osipyan Str. 2, Chernogolovka 142432, Russia
| | - Mikhail V Zhidkov
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Academician Semenov Ave. 1, Chernogolovka 142432, Russia
| | | | | | - Mikhail S Leshchev
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Academician Semenov Ave. 1, Chernogolovka 142432, Russia
| | - Eugeniy V Golosov
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Academician Semenov Ave. 1, Chernogolovka 142432, Russia
| | - Lyubov A Frolova
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Academician Semenov Ave. 1, Chernogolovka 142432, Russia
| | - Pavel A Troshin
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Academician Semenov Ave. 1, Chernogolovka 142432, Russia
- Harbin Institute of Technology (HIT), 92 West Dazhi Street, Nan Gang District, Harbin 150001, China
- Zhengzhou Research Institute of HIT, 26 Longyuan East 7th, Jinshui District, Zhengzhou 450000, China
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Bărar A, Maclean SA, Dănilă O, Taylor AD. Towards High-Efficiency Photon Trapping in Thin-Film Perovskite Solar Cells Using Etched Fractal Metadevices. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16113934. [PMID: 37297068 DOI: 10.3390/ma16113934] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Revised: 05/10/2023] [Accepted: 05/16/2023] [Indexed: 06/12/2023]
Abstract
Reflective loss is one of the main factors contributing to power conversion efficiency limitation in thin-film perovskite solar cells. This issue has been tackled through several approaches, such as anti-reflective coatings, surface texturing, or superficial light-trapping metastructures. We report detailed simulation-based investigations on the photon trapping capabilities of a standard Methylammonium Lead Iodide (MAPbI3) solar cell, with its top layer conveniently designed as a fractal metadevice, to reach a reflection value R<0.1 in the visible domain. Our results show that, under certain architecture configurations, reflection values below 0.1 are obtained throughout the visible domain. This represents a net improvement when compared to the 0.25 reflection yielded by a reference MAPbI3 having a plane surface, under identical simulation conditions. We also present the minimum architectural requirements of the metadevice by comparing it to simpler structures of the same family and performing a comparative study. Furthermore, the designed metadevice presents low power dissipation and exhibits approximately similar behavior regardless of the incident polarization angle. As a result, the proposed system is a viable candidate for being a standard requirement in obtaining high-efficiency perovskite solar cells.
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Affiliation(s)
- Ana Bărar
- Electronic Technology and Reliability Department, Polytechnic University of Bucharest, 060082 Bucharest, Romania
| | - Stephen Akwei Maclean
- Chemical Engineering Department, Tandon School of Engineering, New York University, Brooklyn, NY 11201, USA
| | - Octavian Dănilă
- Physics Department, Polytechnic University of Bucharest, 060082 Bucharest, Romania
| | - André D Taylor
- Chemical Engineering Department, Tandon School of Engineering, New York University, Brooklyn, NY 11201, USA
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Chakraborty K, Medikondu NR, Duraisamy K, Soliman NF, El-Shafai W, Lavadiya S, Paul S, Das S. Studies of Performance of Cs 2TiI 6-XBr X (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer. MICROMACHINES 2023; 14:447. [PMID: 36838147 PMCID: PMC9965436 DOI: 10.3390/mi14020447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/01/2023] [Revised: 02/06/2023] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
The present research work represents the numerical study of the device performance of a lead-free Cs2TiI6-XBrX-based mixed halide perovskite solar cell (PSC), where x = 1 to 5. The open circuit voltage (VOC) and short circuit current (JSC) in a generic TCO/electron transport layer (ETL)/absorbing layer/hole transfer layer (HTL) structure are the key parameters for analyzing the device performance. The entire simulation was conducted by a SCAPS-1D (solar cell capacitance simulator- one dimensional) simulator. An alternative FTO/CdS/Cs2TiI6-XBrX/CuSCN/Ag solar cell architecture has been used and resulted in an optimized absorbing layer thickness at 0.5 µm thickness for the Cs2TiBr6, Cs2TiI1Br5, Cs2TiI2Br4, Cs2TiI3Br3 and Cs2TiI4Br2 absorbing materials and at 1.0 µm and 0.4 µm thickness for the Cs2TiI5Br1 and Cs2TiI6 absorbing materials. The device temperature was optimized at 40 °C for the Cs2TiBr6, Cs2TiI1Br5 and Cs2TiI2Br4 absorbing layers and at 20 °C for the Cs2TiI3Br3, Cs2TiI4Br2, Cs2TiI5Br1 and Cs2TiI6 absorbing layers. The defect density was optimized at 1010 (cm-3) for all the active layers.
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Affiliation(s)
- Kunal Chakraborty
- Advanced Materials Research and Energy Application Laboratory, Department of Energy Engineering, North-Eastern Hill University, Shillong 793022, India
| | - Nageswara Rao Medikondu
- Department of Mechanical Engineering, Koneru Lakshmaiah Education Foundation, Vaddeswaram 522302, India
| | - Kumutha Duraisamy
- Department of Biomedical Engineering, KarpagaVinayaga College of Engineering and Technology, Chengalpattu 603308, India
| | - Naglaa F. Soliman
- Department of Information Technology, College of Computer and Information Sciences, Princess Nourah Bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
| | - Walid El-Shafai
- Security Engineering Lab, Computer Science Department, Prince Sultan University, Riyadh 11586, Saudi Arabia
- Department of Electronics and Electrical Communications Engineering, Faculty of Electronic Engineering, Menoufia University, Menouf 32952, Egypt
| | - Sunil Lavadiya
- Department of Information and Communication Technology, Marwadi University, Rajkot 360003, India
| | - Samrat Paul
- Advanced Materials Research and Energy Application Laboratory, Department of Energy Engineering, North-Eastern Hill University, Shillong 793022, India
| | - Sudipta Das
- Department of Electronics & Communication Engineering, IMPS College of Engineering and Technology, Malda 732103, India
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Yerezhep D, Omarova Z, Aldiyarov A, Shinbayeva A, Tokmoldin N. IR Spectroscopic Degradation Study of Thin Organometal Halide Perovskite Films. Molecules 2023; 28:molecules28031288. [PMID: 36770955 PMCID: PMC9919043 DOI: 10.3390/molecules28031288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 01/24/2023] [Accepted: 01/25/2023] [Indexed: 01/31/2023] Open
Abstract
The advantages of IR spectroscopy include relatively fast analysis and sensitivity, which facilitate its wide application in the pharmaceutical, chemical and polymer sectors. Thus, IR spectroscopy provides an excellent opportunity to monitor the degradation and concomitant evolution of the molecular structure within a perovskite layer. As is well-known, one of the main limitations preventing the industrialization of perovskite solar cells is the relatively low resistance to various degradation factors. The aim of this work was to study the degradation of the surface of a perovskite thin film CH3NH3PbI3-xClx caused by atmosphere and light. To study the surface of CH3NH3PbI3-xClx, a scanning electron microscope, infrared (IR) spectroscopy and optical absorption were used. It is shown that the degradation of the functional layer of perovskite proceeds differently depending on the acting factor present in the surrounding atmosphere, whilst the chemical bonds are maintained within the perovskite crystal structure under nitrogen. However, when exposed to an ambient atmosphere, an expansion of the NH3+ band is observed, which is accompanied by a shift in the N-H stretching mode toward higher frequencies; this can be explained by the degradation of the perovskite surface due to hydration. This paper shows that the dissociation of H2O molecules under the influence of sunlight can adversely affect the efficiency and stability of the absorbing layer. This work presents an approach to the study of perovskite structural stability with the aim of developing alternative concepts to the fabrication of stable and sustainable perovskite solar cells.
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Affiliation(s)
- Darkhan Yerezhep
- Faculty of Physics and Technology, Al Farabi Kazakh National University, 71 Al-Farabi Ave., Almaty 050040, Kazakhstan
- Correspondence: (D.Y.); (Z.O.)
| | - Zhansaya Omarova
- Faculty of Physics and Technology, Al Farabi Kazakh National University, 71 Al-Farabi Ave., Almaty 050040, Kazakhstan
- Correspondence: (D.Y.); (Z.O.)
| | - Abdurakhman Aldiyarov
- Faculty of Physics and Technology, Al Farabi Kazakh National University, 71 Al-Farabi Ave., Almaty 050040, Kazakhstan
| | - Ainura Shinbayeva
- Faculty of Physics and Technology, Al Farabi Kazakh National University, 71 Al-Farabi Ave., Almaty 050040, Kazakhstan
| | - Nurlan Tokmoldin
- Optoelectronics of Disordered Semiconductors, Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam-Golm, Germany
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