Ferroelastic Domain Boundary-Based Multiferroicity

Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films

Defects have a significant influence on the polarization and electromechanical properties of ferroelectric materials. Statistically, they can be seen as random pinning centers acting on an elastic manifold, slowing domain-wall propagation and raising the energy required to switch polarization. Here we show that the "dressing" of defects can lead to unprecedented control of domain-wall dynamics. We engineer defects of two different dimensionalities in ferroelectric oxide thin films-point defects externally induced via He^{2+} bombardment, and extended quasi-one-dimensional a domains formed in response to internal strains. The a domains act as extended strong pinning sites (as expected) imposing highly localized directional constraints. Surprisingly, the induced point defects in the He^{2+} bombarded samples orient and align to impose further directional pinning, screening the effect of a domains. This defect interplay produces more uniform and predictable domain-wall dynamics. Such engineered interactions between defects are crucial for advancements in ferroelectric devices.

Interplay of domain structure and phase transitions: theory, experiment and functionality

Domain walls and phase boundaries are fundamental ingredients of ferroelectrics and strongly influence their functional properties. Although both interfaces have been studied for decades, often only a phenomenological macroscopic understanding has been established. The recent developments in experiments and theory allow to address the relevant time and length scales and revisit nucleation, phase propagation and the coupling of domains and phase transitions. This review attempts to specify regularities of domain formation and evolution at ferroelectric transitions and give an overview on unusual polar topological structures that appear as transient states and at the nanoscale. We survey the benefits, validity, and limitations of experimental tools as well as simulation methods to study phase and domain interfaces. We focus on the recent success of these tools in joint scale-bridging studies to solve long lasting puzzles in the field and give an outlook on recent trends in superlattices.

Multiferroic heterostructures for spintronics

For next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.

Physics of SrTiO3-based heterostructures and nanostructures: a review

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.