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Zheng Y, Xie H, Zhang Q, Suwardi A, Cheng X, Zhang Y, Shu W, Wan X, Yang Z, Liu Z, Tang X. Unraveling the Critical Role of Melt-Spinning Atmosphere in Enhancing the Thermoelectric Performance of p-Type Bi 0.52Sb 1.48Te 3 Alloys. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36186-36195. [PMID: 32689784 DOI: 10.1021/acsami.0c09656] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Melt spinning has proven effective in maintaining chemical homogeneity and introducing multiscale microstructures that can reduce the lattice thermal conductivity and consequently enhance the thermoelectric performance of consolidated bulk materials. In this work, p-type Bi0.52Sb1.48Te3 bulk alloys are fabricated by melt spinning (MS) followed by subsequent plasma activated sintering (PAS). The influence of different MS atmospheres (air, Ar, N2, and He) on the morphologies of MS ribbons and the thermoelectric properties of MS-PAS bulk materials has been investigated systematically. Because of the relatively high thermal conductivity, a He atmosphere expedites the heat dissipation in the MS process and results in severe sublimation of tellurium and thus inferior thermoelectric performance. In contrast, an Ar atmosphere can essentially prevent heat loss of the fusant and suppress the sublimation of tellurium. Consequently, the corresponding Bi0.52Sb1.48Te3 sample (MS in Ar atmosphere) presents the highest peak ZT and average ZT values of 1.09 (at 340 K) and 0.81 (in 300-500 K), respectively. The average ZT of the sample prepared using an Ar atmosphere is almost three times the one prepared using a He atmosphere. This reflects the importance of using the appropriate atmosphere during the melt-spinning process. This result, which indicates that melt spinning in an Ar atmosphere is preferable to avoid heat loss, can also be extended to other materials.
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Affiliation(s)
- Yun Zheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Hongyao Xie
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Qiang Zhang
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Ady Suwardi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xin Cheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Youfang Zhang
- School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
- Key Laboratory of Materials Processing and Mold, Ministry of Education, Zhengzhou University, Zhengzhou 450002, China
| | - Wei Shu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xiaojuan Wan
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Zhilan Yang
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Zhihong Liu
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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Tao Q, Deng R, Li J, Yan Y, Su X, Poudeu PFP, Tang X. Enhanced Thermoelectric Performance of Bi 0.46Sb 1.54Te 3 Nanostructured with CdTe. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26330-26341. [PMID: 32401006 DOI: 10.1021/acsami.0c03225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Cd-containing polycrystalline Bi0.46Sb1.54Te3 samples with precisely controlled phase composition were synthesized by conventional melting-quenching-annealing technique and a melt-spinning method. The pseudo ternary phase diagram for Cd-Bi/Sb-Te in the region near Bi0.46Sb1.54Te3 was systematically studied. Cd serves as an acceptor dopant contributing holes, whereas for samples doped with CdTe, the combined effects of the substitution of Sb/Bi with Cd and the formation of Sb/BiTe antisite defects leads to the increase in hole concentration. Moreover, upon doping with Cd, the lattice thermal conductivity decreases significantly owing to the intensified point defect phonon scattering. The sample with Cd content of 0.01 attains the maximum ZT of 1.15 at 425 K. The utilization of melt-spinning method brings about the in situ nanostructured CdTe and grain size refinement, which further reduce the lattice thermal conductivity while preserving excellent electrical performance. As a result, a higher ZT of 1.30 at 425 K is realized with CdTe content x = 0.005.
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Affiliation(s)
- Qirui Tao
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Rigui Deng
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Junjie Li
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yonggao Yan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xianli Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Pierre F P Poudeu
- Laboratory for Emerging Energy and Electronic Materials (LE3M), Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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Ibrahim D, Ohorodniichuk V, Candolfi C, Semprimoschnig C, Dauscher A, Lenoir B. Improved Thermoelectric Properties in Melt-Spun SnTe. ACS OMEGA 2017; 2:7106-7111. [PMID: 31457290 PMCID: PMC6645241 DOI: 10.1021/acsomega.7b01397] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2017] [Accepted: 10/11/2017] [Indexed: 05/29/2023]
Abstract
SnTe has been the focus of numerous experimental and theoretical studies over the last years owing to its high thermoelectric performances near 800 K when appropriately doped. Here, we demonstrate that melt-spinning, an ultrafast-quenching synthesis technique, followed by spark plasma sintering results in enhanced ZT values in polycrystalline SnTe. To illustrate the impact of this technique, the results are contrasted with those obtained on two polycrystalline samples prepared by direct quenching of molten SnTe and without quenching. SnTe melt-spun ribbons are characterized by a peculiar columnar microstructure that contributes to lower the lattice thermal conductivity below 700 K in pressed samples. More importantly, this technique results in a significant decrease in the hole concentration, giving rise to enhanced thermopower values above 500 K. The variation in the hole concentration is likely due to a slight loss of elemental Te during the melt-spinning process. Thanks to the decreased hole concentration, the thermoelectric performances are significantly enhanced with a peak ZT value of 0.6 at 800 K, which represents a 40% increase over the values measured for samples prepared with and without quenching. These findings indicate that melt-spinning provides a novel strategy to improve the thermoelectric properties of SnTe that could be worthwhile extending to substituted compounds.
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Affiliation(s)
- Dorra Ibrahim
- Institut
Jean Lamour, UMR 7198 CNRS—Université de
Lorraine, 2 allée
André Guinier—Campus ARTEM, BP 50840, 54011 Nancy Cedex, France
| | - Viktoriia Ohorodniichuk
- Institut
Jean Lamour, UMR 7198 CNRS—Université de
Lorraine, 2 allée
André Guinier—Campus ARTEM, BP 50840, 54011 Nancy Cedex, France
| | - Christophe Candolfi
- Institut
Jean Lamour, UMR 7198 CNRS—Université de
Lorraine, 2 allée
André Guinier—Campus ARTEM, BP 50840, 54011 Nancy Cedex, France
| | | | - Anne Dauscher
- Institut
Jean Lamour, UMR 7198 CNRS—Université de
Lorraine, 2 allée
André Guinier—Campus ARTEM, BP 50840, 54011 Nancy Cedex, France
| | - Bertrand Lenoir
- Institut
Jean Lamour, UMR 7198 CNRS—Université de
Lorraine, 2 allée
André Guinier—Campus ARTEM, BP 50840, 54011 Nancy Cedex, France
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