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Vafadar MF, Zhao S. Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires. Sci Rep 2023; 13:6633. [PMID: 37095158 PMCID: PMC10126006 DOI: 10.1038/s41598-023-33457-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Accepted: 04/13/2023] [Indexed: 04/26/2023] Open
Abstract
Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further broadens the applications to disinfection, medical diagnostics, phototherapy, and so on. Nonetheless, realizing SE lasers in the UV range has remained to be a challenge. Despite of the recent breakthrough in UV SE lasers with aluminum gallium nitride (AlGaN), the electrically injected AlGaN nanowire UV lasers are based on random optical cavities, whereas AlGaN UV vertical-cavity SE lasers (VCSELs) are all through optical pumping and are all with large lasing threshold power densities in the range of several hundred kW/cm2 to MW/cm2. Herein, we report ultralow threshold, SE lasing in the UV spectral range with GaN-based epitaxial nanowire photonic crystals. Lasing at 367 nm is measured, with a threshold of only around 7 kW/cm2 (~ 49 μJ/cm2), a factor of 100× reduction compared to the previously reported conventional AlGaN UV VCSELs at similar lasing wavelengths. This is also the first achievement of nanowire photonic crystal SE lasers in the UV range. Further given the excellent electrical doping that has already been established in III-nitride nanowires, this work offers a viable path for the development of the long-sought-after semiconductor UV SE lasers.
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Affiliation(s)
- Mohammad Fazel Vafadar
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada.
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Zhou B, Li J, Dong X, Yao L. GaN nanowires/Si photocathodes for CO2 reduction towards solar fuels and chemicals: advances, challenges, and prospects. Sci China Chem 2023. [DOI: 10.1007/s11426-022-1508-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/19/2023]
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AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy. NANOMATERIALS 2022; 12:nano12142508. [PMID: 35889730 PMCID: PMC9319290 DOI: 10.3390/nano12142508] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Revised: 07/20/2022] [Accepted: 07/20/2022] [Indexed: 11/17/2022]
Abstract
AlGaN nanorods have attracted increasing amounts of attention for use in ultraviolet (UV) optoelectronic devices. Here, self-assembled AlGaN nanorods with embedding quantum disks (Qdisks) were grown on Si(111) using plasma-assisted molecular beam epitaxy (PA-MBE). The morphology and quantum construction of the nanorods were investigated and well-oriented and nearly defect-free nanorods were shown to have a high density of about 2 × 1010 cm−2. By controlling the substrate temperature and Al/Ga ratio, the emission wavelengths of the nanorods could be adjusted from 276 nm to 330 nm. By optimizing the structures and growth parameters of the Qdisks, a high internal quantum efficiency (IQE) of the AlGaN Qdisk nanorods of up to 77% was obtained at 305 nm, which also exhibited a shift in the small emission wavelength peak with respect to the increasing temperatures during the PL measurements.
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Sarkar R, Bhunia S, Jana D, Nag D, Chatterjee S, Laha A. Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters. NANOTECHNOLOGY 2022; 33:384001. [PMID: 35636220 DOI: 10.1088/1361-6528/ac7472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Accepted: 05/30/2022] [Indexed: 06/15/2023]
Abstract
In this manuscript, we have shown the growth and extensive structural and optical characteristic of the uniformly Mg-doped Al0.23Ga0.77N (UV-A region,λ∼ 323 nm) nanowire. The Kelvin probe force microscopy was employed to determine the profile of holes in p-type AlGaN nanowires by measuring the work function changes induced by Mg incorporation. The influence of surface band bending on doping concentration has thoroughly been discussed. Our experiment confirms the homogeneous incorporation of Mg throughout the nanowire without any top surface Mg segregation. In this work, we have also demonstrated a comprehensive analysis of acceptor states induced thermal quenching behaviour in the optical transition of Mg-doped AlGaN nanowire. We propose a phenomenological model, based on the rate equation which confirms that achieving higher 'hole' (p-doping) concentration in AlGaN nanowire (>1018cm-3) is more conducive than the planar counterpart if the growth of NWs is carried out at optimized process conditions. This rate equation-based model has also demonstrated the influence of sidewall surface passivation in those AlGaN nanowires.
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Affiliation(s)
- Ritam Sarkar
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Swagata Bhunia
- Department of Physics, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Dipankar Jana
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Dhiman Nag
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Soumyadip Chatterjee
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Apurba Laha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
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Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices. CRYSTALS 2022. [DOI: 10.3390/cryst12060784] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride superlattices (SLs) lead to the periodic oscillation of the energy bands, exhibiting enhanced ionization of the deep acceptors (Mg in this study), and hence their use in III-nitride semiconductor-based light-emitting diodes (LEDs) and p-channel FETs is beneficial. This study experimentally demonstrates the presence of acceptor-like traps at the positive polarization interfaces acting as the primary source of holes in Ga-polar p-type uniformly doped (AlGaN/AlN)/GaN SLs with limited Mg doping. The observed concentration of holes exceeding that of the dopants incorporated into the samples during growth can be attributed to the ionization of acceptor-like traps, located at 0.8 eV above the valence band of GaN, at positive polarization interfaces. All samples were grown using the metal organic vapor phase epitaxy (MOVPE) technique, and the materials’ characterization was carried out using X-ray diffraction and Hall effect measurements. The hole concentrations experimentally measured are juxtaposed with the calculated value of hole concentrations from FETIS®, and the measured trends in mobility are explained using the amplitude of separation of the two-dimensional hole gas in the systems from the positive polarization interfaces.
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Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate. COATINGS 2022. [DOI: 10.3390/coatings12020147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate between InN film and the free-standing diamond substrate, the function of a buffer layer is to build a bridge between the substrate and film to reduce the lattice mismatch between them. Therefore, here, we study the performance impact of introducing an InN buffer layer at various deposition temperatures and explore the optimal buffer layer deposition temperature used to grow relatively high-quality InN films. The experimental results show that when an InN buffer layer is introduced at a deposition temperature of 100 °C, the growth direction of the InN film is perpendicular to the substrate with a high c-axis preferred orientation, the roughness of the surface is minimal, and the particle sizes are consistent with growth in the same direction. Additionally, the carrier mobility is highest, and the carrier concentration is lowest compared with other conditions.
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Saket O, Wang J, Amador-Mendez N, Morassi M, Kunti A, Bayle F, Collin S, Jollivet A, Babichev A, Sodhi T, Harmand JC, Julien FH, Gogneau N, Tchernycheva M. Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy. NANOTECHNOLOGY 2021; 32:085705. [PMID: 33171444 DOI: 10.1088/1361-6528/abc91a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We analyse the electrical and optical properties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources. Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current (EBIC) microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic radial growth enhanced by the magnesium (Mg) doping leads to a mixed axial-radial behaviour with strong wire-to-wire fluctuations of the junction position and shape. By reverting the doping order p-base p-n junctions with a purely axial well-defined structure and a low wire-to-wire dispersion are achieved. The good optical quality of the top n nanowire segment grown on a p-doped stem is preserved. A hole concentration in the p-doped segment exceeding 1018 cm-3 was extracted from EBIC mapping and photoluminescence analyses. This high concentration is reached without degrading the nanowire morphology.
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Affiliation(s)
- Omar Saket
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Junkang Wang
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Nuño Amador-Mendez
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Martina Morassi
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Arup Kunti
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Fabien Bayle
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Stéphane Collin
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Arnaud Jollivet
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | | | - Tanbir Sodhi
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Jean-Christophe Harmand
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - François H Julien
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Noelle Gogneau
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Maria Tchernycheva
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
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Bui HQT, Velpula RT, Jian B, Philip MR, Tong HD, Lenka TR, Nguyen HPT. High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation. APPLIED OPTICS 2020; 59:7352-7356. [PMID: 32902502 DOI: 10.1364/ao.400877] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Accepted: 07/26/2020] [Indexed: 06/11/2023]
Abstract
Potassium hydroxide (KOH) and ammonium sulfide (NH4)2Sx have been used as a surface passivation treatment to improve the electrical and optical performance of AlGaN nanowire ultraviolet (UV) light-emitting diodes (LEDs). Enhancements in photoluminescence at 335 nm (49%), optical output power (65%), and electroluminescence (83%), with respect to the as-grown nanowire LED are recorded for the AlGaN nanowire UV LEDs with surface passivation. These enhancements are attributed to the reduced nonradiative recombination on the nanowire surfaces. This study provides a potential surface passivation approach to produce high-power AlGaN nanowire LEDs operating in the UV spectrum.
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AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects. MICROMACHINES 2020; 11:mi11020125. [PMID: 31979274 PMCID: PMC7074201 DOI: 10.3390/mi11020125] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2019] [Revised: 01/19/2020] [Accepted: 01/22/2020] [Indexed: 12/12/2022]
Abstract
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.
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Wu Y, Liu B, Li Z, Tao T, Xie Z, Wang K, Xiu X, Chen D, Lu H, Zhang R, Zheng Y. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates. NANOTECHNOLOGY 2020; 31:045604. [PMID: 31578003 DOI: 10.1088/1361-6528/ab4a4b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Gallium nitride (GaN)-based nanowires (NWs) have attracted much attention for the fabrication of novel nanostructured devices. In this paper, the influence of an AlN seeding layer on the nucleation of self-assembled GaN NWs grown by plasma-assisted molecular beam epitaxy (MBE) on Si (111) substrates has been investigated. Not only is the formation of a two-dimensional compact GaN layer at the bottom of the NWs suppressed, but also a high density of vertically aligned well-separated GaN NWs originating from GaN islands are successfully obtained after introducing annealing and nitridation processes. Scanning electronic microscope and transmission electron microscope measurements show that the NWs have a high crystalline wurtzite structure nearly free of dislocations and stacking faults and the NW diameter remains constant over almost the entire length. Due to the temperature-dependent diffusion length of Ga adatoms during the nucleation process, the formation of well-separated NWs relies on the distribution and morphology of the underlying AlN seeding layer. Moreover, the SiNx layer served as mask to inhibit coalescence at the nucleation sites. The developed growth processes and the obtained results provide a viable path facilitating the use of MBE growth techniques to fabricate III-nitride NW-based materials and related devices on Si substrates.
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Affiliation(s)
- Yaozheng Wu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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Zhao S, Wang R, Chu S, Mi Z. Molecular Beam Epitaxy of III-Nitride Nanowires: Emerging Applications From Deep-Ultraviolet Light Emitters and Micro-LEDs to Artificial Photosynthesis. IEEE NANOTECHNOLOGY MAGAZINE 2019. [DOI: 10.1109/mnano.2019.2891370] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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