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Vu TH, Pham AT, Nguyen VQ, Park J, Park S, Cho S. Bi-doped GaTe single crystals: Growth and thermoelectric properties. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Bandura AV, Kovalenko AV, Kuruch DD, Evarestov RA. Lattice Dynamics and Thermodynamic Properties of Bulk Phases and Monolayers of GaTe and InTe: A Comparison from First‐Principles Calculations. Eur J Inorg Chem 2020. [DOI: 10.1002/ejic.202000634] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Andrei V. Bandura
- Quantum Chemistry Department, Institute of Chemistry Saint Petersburg State University 7/9 Universitetskaya Naberezhnaya St. Petersburg 199034 Russian Federation
| | - Alexey V. Kovalenko
- Quantum Chemistry Department, Institute of Chemistry Saint Petersburg State University 7/9 Universitetskaya Naberezhnaya St. Petersburg 199034 Russian Federation
| | - Dmitry D. Kuruch
- Quantum Chemistry Department, Institute of Chemistry Saint Petersburg State University 7/9 Universitetskaya Naberezhnaya St. Petersburg 199034 Russian Federation
| | - Robert A. Evarestov
- Quantum Chemistry Department, Institute of Chemistry Saint Petersburg State University 7/9 Universitetskaya Naberezhnaya St. Petersburg 199034 Russian Federation
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Mercado E, Zhou Y, Xie Y, Zhao Q, Cai H, Chen B, Jie W, Tongay S, Wang T, Kuball M. Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene. ACS OMEGA 2019; 4:18002-18010. [PMID: 31720504 PMCID: PMC6843706 DOI: 10.1021/acsomega.9b01752] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2019] [Accepted: 09/05/2019] [Indexed: 05/25/2023]
Abstract
Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dramatically via encapsulation with graphene. Through examining Raman signatures of degradation, we show that the choice of substrate significantly impacts the degradation rate and that the process is accelerated by the transfer of GaTe to hydrophilic substrates such as SiO2/Si. We find that double encapsulation with both top and bottom graphene layers can extend the lifetime of the material for several weeks. The photoresponse of flakes encapsulated in this way is only reduced by 17.6 ± 0.4% after 2 weeks, whereas unencapsulated flakes display no response after this time. Our results demonstrate the potential for alternative, van der Waals material-based passivation strategies in unstable layered materials and highlight the need for careful selection of substrates for 2D electronic devices.
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Affiliation(s)
- Elisha Mercado
- Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K
| | - Yan Zhou
- Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K
| | - Yong Xie
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, P. R. China
| | - Qinghua Zhao
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Hui Cai
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Bin Chen
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Wanqi Jie
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Tao Wang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China
| | - Martin Kuball
- Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K
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Li H, Zhou Z, Zhang K, Wang H. Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field. NANOTECHNOLOGY 2019; 30:405207. [PMID: 31247615 DOI: 10.1088/1361-6528/ab2d67] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional materials have recently been the focus of extensive research. Graphene-based vertical van der Waals heterostructures are expected to design and fabricate novel electronic and optoelectronic devices. Monolayer gallium telluride is a graphene-like nanosheet synthesized in experiment. Here, the electronic properties of GaTe/graphene heterostructures are investigated under the interlayer coupling and the applied perpendicular electric field. The results show that the electronic properties of GaTe and graphene are preserved, and the energy bandgap of graphene is opened to 13.5 meV in the GaTe/graphene heterostructure. It is found that the n-type Schottky contact is formed in the GaTe/graphene heterostructure, which can be tuned by the interlayer coupling, and the applied electric field. Moreover, a transformation from n-type to p-type Schottky contact is observed when the interlayer distance is smaller than 3.15 Å or the applied electric field is larger than 0.05 V Å-1. These properties are fundamental to the design of new Schottky nanodevices based on the GaTe/graphene heterostructure.
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Affiliation(s)
- Hengheng Li
- Henan Key Laboratory of Photovoltaic Materials, and School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
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