Analysis of Waveguides on Lithium Niobate Thin Films

High-Performance Electro-Optical Mach–Zehnder Modulators in a Silicon Nitride–Lithium Niobate Thin-Film Hybrid Platform

We analyzed a Mach–Zehnder electro-optical modulator based on a silicon nitride strip–loaded waveguide on 0.5 μm thick x-cut lithium niobate thin film. The optical and radio frequency parameters for two different modulator structures (Type I: packaged with 2 μm thick SiO2 and Type II: unpackaged) were simulated, calculated, and optimized. The Optical parameters included the single-mode conditions, effective indices, the separation distance between the electrode edge and the Si3N4-strip-loaded edge, optical power distribution, bending loss, optical field distribution, and half-wave voltage. The radio frequency parameters included the characteristic impedance, attenuation constant, radio frequency effective index, and −3 dB modulation bandwidth. According to the numerical simulation and theoretical analysis, the half-wave voltage product and the −3 dB modulation bandwidth were, respectively, 2.85 V·cm and 0.4 THz for Type I modulator, and 2.33 V·cm and 1.26 THz for Type II modulator, with a device length of 3 mm.

Dual-Axis MEMS Resonant Scanner Using 128∘Y Lithium Niobate Thin-Film

The micro-electro-mechanical systems (MEMS) resonant scanners are in great demand for numerous light scanning applications. Recently, the development of LiDAR in micro-robotics and mobile devices has led to the requirement of ultra-small systems with low driving voltage, low power, compact size and high performance. We have first proposed the dual-axis MEMS scanner using the lithium niobate (LN) thin-film platform, which is expected to fulfill the requirement. This paper describes the actuation principle and scanner structure, meanwhile develops the analytical model for the scanner. The analytical model is later validated by the finite element analysis. The performance of the proposed scanner is improved with the optimization of the orientation of LN and layer thickness. The proposed scanner achieves the θopt·D·f up to 937.8∘·mm·kHz in simulation. The simulated optical angle in the x-axis and y-axis are 50∘ and 42∘ at 1 V, corresponding to resonant frequencies of 79.9 kHz and 558.2 kHz, respectively. With the superior performance of large deflection, high scanning frequency, high figure of merit and low voltage, the proposed MEMS scanner is a promising candidate for fast scanner applications (e.g., wavelength-selective switches and submicron biomedical system), especially the application of LiDAR in mobile devices or micro-robotics.

Foundry-compatible thin film lithium niobate modulator with RF electrodes buried inside the silicon oxide layer of the SOI wafer

Ever-increasing complexity of communication systems demands the co-integration of electronics and photonics. But there are still some challenges associated with the integration of thin film lithium niobate (TFLN) electro-optic modulators with the standard and well-established silicon photonics. Current TFLN platforms are mostly not compatible with the silicon photonics foundry process due to the choice of substrate or complicated fabrication requirements, including silicon substrate removal and formation of radio-frequency (RF) electrodes on the top of the TFLN. Here, we report on a platform where all the optical and RF waveguiding structures are fabricated first, and then the TFLN is bonded on top of the silicon photonic chip as the only additional step. Hence, the need for substrate removal is eliminated, and except for the last step of TFLN bonding, its fabrication process is silicon foundry compatible and much more straightforward compared to other fabrication methods.