Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

One-step hydrothermal preparation of Ta-doped ZnO nanorods for improving decolorization efficiency under visible light

In this work, Ta-doped ZnO (Ta-ZnO) nanomaterials were synthesized by the hydrothermal method at different temperatures (110, 150, and 170 °C) for the photodegradation of methylene blue (MB) under visible light. Ta doping significantly affects the crystal defects, optical properties, and MB photocatalytic efficiency of ZnO materials. The optical absorption edge of Ta-ZnO 150 was redshifted compared to undoped ZnO, correlating to bandgap narrowing (E _gTa-ZnO = 2.92 eV; E _gZnO = 3.07 eV), implying that Ta doped ZnO is capable of absorbing visible light. Besides, Ta-doping was the reason for enhanced blue light emission in the photoluminescence spectrum, which is related to the oxygen defect V ⁰ _O. It is also observed in the XPS spectra, where the percentage of oxygen in the oxygen-deficient regions (O_531.5 eV) of Ta-ZnO150 is higher than that of ZnO150. It is an important factor in enhancing ZnO's photocatalytic efficiency. The MB degradation efficiency of Ta-doped ZnO reached the highest for Ta-ZnO 150 and was 2.5 times higher than ZnO under a halogen lamp (HL). Notably, the influence of hydrothermal temperature on the structural, morphological, and photoelectrochemical properties was discussed in detail. As a result, the optimal hydrothermal temperature for synthesizing the nanorod is 150 °C. Furthermore, photocatalytic experiments were also performed under simulated sunlight and natural sunlight. The nature of the photo-oxidative degradation of MB was also investigated.

Exploring Tantalum as a Potential Dopant to Promote the Thermoelectric Performance of Zinc Oxide

Zinc oxide (ZnO) has being recognised as a potentially interesting thermoelectric material, allowing flexible tuning of the electrical properties by donor doping. This work focuses on the assessment of tantalum doping effects on the relevant structural, microstructural, optical and thermoelectric properties of ZnO. Processing of the samples with a nominal composition Zn_1-xTa_xO by conventional solid-state route results in limited solubility of Ta in the wurtzite structure. Electronic doping is accompanied by the formation of other defects and dislocations as a compensation mechanism and simultaneous segregation of ZnTa₂O₆ at the grain boundaries. Highly defective structure and partial blocking of the grain boundaries suppress the electrical transport, while the evolution of Seebeck coefficient and band gap suggest that the charge carrier concentration continuously increases from x = 0 to 0.008. Thermal conductivity is almost not affected by the tantalum content. The highest ZT~0.07 at 1175 K observed for Zn_0.998Ta_0.002O is mainly provided by high Seebeck coefficient (-464 V/K) along with a moderate electrical conductivity of ~13 S/cm. The results suggest that tantalum may represent a suitable dopant for thermoelectric zinc oxide, but this requires the application of specific processing methods and compositional design to enhance the solubility of Ta in wurtzite lattice.