Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

Enhancement of the light extraction characteristics and wide-angle emissive behavior of deep-ultraviolet flip-chip light-emitting diodes by using optimized optical films

We propose the use of optical films to enhance the light extraction efficiency (LEE) and wide-angle emission of traditional packaged deep-ultraviolet light-emitting diodes (DUV-LEDs). Total internal reflection occurs easily in DUV-LEDs because they contain sapphire, which has a high refractive index. DUV-LEDs also contain an aluminum nitride (AlN) ceramic substrate, which has high light absorption in the ultraviolet band. Photons are absorbed by the sapphire and AlN ceramic substrate, which reduces the LEE of DUV-LEDs. By adding a brightness enhancement film (BEF) on the sapphire surface and a high-reflection film (HRF) on the surface of the AlN ceramic substrate, the LEE of DUV-LEDs can be increased. Moreover, we designed a single-layer metal reflective film (SMRF) on the upper surface of the quartz glass in order to achieve wide-angle emission. Experimental results indicated that compared with traditional packaged DUV-LEDs, the light output power and external quantum efficiency of DUV-LEDs with a plated BEF, HRF, and SMRF increased by 18.3% and 18.2%, respectively. Moreover, an emission angle of 160° was achieved. In a reliability test, DUV-LEDs maintained more than 95% of the initial forward voltage and light output power after 1000 h of operation at 25°C, which indicated that the addition of an optical film can improve the light efficiency and long-term reliability of DUV-LEDs.

Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones

It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-emitting didoes (DUV LEDs) can be enhanced by using truncated cone arrays with inclined sidewalls. In this work, the air-cavity-shaped inclined sidewall is applied and the p-GaN layer at the top of the truncated cone is laterally over-etched so that more light escape paths are generated for AlGaN-based DUV LEDs. The experimental results manifest that when compared with DUV LEDs only having the air-cavity-shaped inclined sidewall, the optical power for the DUV LEDs with laterally over-etched p-GaN at the top of the truncated cone is enhanced by 30% without sacrificing the forward bias. It is because the over-etched p-GaN makes little effect on the carrier injection and does not affect the ohmic contact resistance. Moreover, the simulation results show that the truncated cone with laterally over-etched p-GaN layer can enhance the LEE because the reduced p-GaN area can suppress the optical absorption and supplies additional light paths for DUV photos. Then, more light will be reflected into escape cones at the sapphire side.

Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light-Emitting Diodes

Consider material machinability and lattice mismatch sapphire as substrates for the ultraviolet-C light-emitting diodes (UV-C LEDs) are commonly used, but their high refractive index can result in the total internal reflection (TIR) of light whereby some light is absorbed, therefore caused reducing light extraction efficiency (LEE). In this study, we propose a method to optimize the thickness of a sapphire substrate light guide layer through first-order optical design which used the optical simulation software Ansys SPEOS to simulate and evaluate the light extraction efficiency. AlGaN UV-C LEDs wafers with a light guide layer thickness of 150-700 μm were used. The simulation proceeded under a center wavelength of 275 nm to determine the optimal thickness design of the light guide layer. Finally, the experimental results demonstrated that the initial light guide layer thickness of 150 μm the reference output power of 13.53 mW, and an increased thickness of 600 um resulted in output power of 20.58 mW. The LEE can be increased by 1.52 times through light guide layer thickness optimization. We propose a method to optimize the thickness of a sapphire substrate light guide layer through first-order optical design. AlGaN UV-C LEDs wafers with a light guide layer thickness of 150-700 μm were used. Finally, the experimental results demonstrated that the LEE can be increased by 1.52 times through light guide layer thickness optimization.

Nanoparticle-Doped Polydimethylsiloxane Fluid Enhances the Optical Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

This paper proposes a new encapsulation structure for aluminum nitride-based deep UV light-emitting diodes (DUV-LEDs) and eutectic flip chips containing polydimethylsiloxane (PDMS) fluid doped with SiO₂ nanoparticles (NPs) with a UV-transparent quartz hemispherical glass cover. Experimental results reveal that the proposed encapsulation structure has considerably higher light output power than the traditional one. The light extraction efficiency was increased by 66.49% when the forward current of the DUV-LED was 200 mA. Doping the PDMS fluid with SiO₂ NPs resulted in higher light output power than that of undoped fluid. The maximum efficiency was achieved at a doping concentration of 0.2 wt%. The optical output power at 200 mA forward current of the encapsulation structure with NP doping of the fluid was 15% higher than that without NP doping. The optical output power of the proposed encapsulation structure was 81.49% higher than that of the traditional encapsulation structure. The enhanced light output power was due to light scattering caused by the SiO₂ NPs and the increased average refractive index. The encapsulation temperature can be reduced by 4 °C at a driving current of 200 mA by using the proposed encapsulation structure.

Square Column Structure of High Efficiency, Reliable, Uniformly Flexible LED Devices

This study demonstrates that flexible white LEDs, doped with diffusion particles and with a square column structure, have excellent luminosity, uniformity, and bending reliability. This large area (5 cm × 5 cm) square column flexible device had a smaller thickness (2 mm), and enhancements in both luminous efficiency (29.5%) and uniformity (44.6%) compared to the characteristics of the 6 mm reference sample. Optimization of the reflective layer coating for the square column, flexible white LED was achieved with a higher luminous efficiency (171 lm/w) and uniformity (92%). We designed a novel lightning bolt electrode to improve reliability and bendability. After the bending test, the blue flexible LED had a lower bending diameter (10 mm) but more bending circles (increased to 2000 times.