Peng Y, Yuan Y, Sorin WV, Cheung S, Huang Z, Fiorentino M, Beausoleil RG. All-silicon microring avalanche photodiodes with a >65 A/W response.
OPTICS LETTERS 2023;
48:1315-1318. [PMID:
36857277 DOI:
10.1364/ol.484932]
[Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
We report an all-Si microring (MRR) avalanche photodiode (APD) with an ultrahigh responsivity (R) of 65 A/W, dark current of 6.5 µA, and record gain-bandwidth product (GBP) of 798 GHz at -7.36 V. The mechanisms for the high responsivity have been modelled and investigated. Furthermore, open eye diagrams up to 20 Gb/s are supported at 1310 nm at -7.36 V. The device is the first, to the best of our knowledge, low cost all-Si APD that has potential to compete with current commercial Ge- and III-V-based photodetectors (PDs). This shows the potential to make the all-Si APD a standard "black-box" component in Si photonics CMOS foundry platform component libraries.
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