Properties of Thermally Evaporated Titanium Dioxide as an Electron-Selective Contact for Silicon Solar Cells

Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) solar cells are increasingly attracting attention due to their low-temperature processing, lean steps, significant temperature coefficient, and their high bifacial capability. The high efficiency and thin wafer nature of SHJ solar cells make them ideal for use as high-efficiency solar cells. However, the complicated nature of the passivation layer and prior cleaning render a well-passivated surface difficult to achieve. In this study, developments and the classification of surface defect removal and passivation technologies are explored. Further, surface cleaning and passivation technologies of high-efficiency SHJ solar cells within the last five years are reviewed and summarized.

Titanium oxide nanomaterials as an electron-selective contact in silicon solar cells for photovoltaic devices

To obtain high conversion efficiency, various carrier-selective contact structures are being applied to the silicon solar cell, and many related studies are being conducted. We conducted research on TiO₂ to create an electron-selective contact structure that does not require a high-temperature process. Titanium metal was deposited using a thermal evaporator, and an additional oxidation process was conducted to form titanium oxide. The chemical compositions and phases of the titanium dioxide layers were analyzed by X-ray diffraction. The passivation effects of each titanium oxide layer were measured using the quasi-steady-state photoconductance. In this study, the layer properties were analyzed when TiO₂ had a passivation effect on the silicon surface. The charge and interface defect densities of the layer were analyzed through CV measurements, and the passivation characteristics according to the TiO₂ phase change were investigated. As a result, by applying optimized TiO₂ layer thickness and annealing temperature conditions through the experiment for passivation to the cell-like structure, which is the structure before metal and electrode formation, an implied open-circuit voltage (iVoc) of 630 mV and an emitter saturation current density (J₀) value of 60.4 fA/cm² were confirmed.

Recent Progress in Interconnection Layer for Hybrid Photovoltaic Tandems

Hybrid tandem solar cells offer the benefits of low cost and full solar spectrum utilization. Among the hybrid tandem structures explored to date, the most popular ones have four (simple stacking design) or two (terminal/tunneling layer addition design) terminal electrodes. Although the latter design is more cost-effective than the former, its widespread application is hindered by the difficulty of preparing an interface between two solar cell materials. The oldest approach to the in-series bonding of two or more bandgap solar cells relies on the introduction of a tunneling layer in multijunction III-V solar cells, but it has some limitations, e.g., the related materials/technologies are applicable only to III-V and certain other solar cells. Thus, alternative methods of realizing junction contacts based on the use of novel materials are highly sought after. Here, the strategies used to realize high-performance tandem cells are described, focusing on interface control in terms of bonding two or more solar cells for tandem approaches. The presented information is expected to aid the establishment of ideal methods of connecting two or more solar cells to obtain the highest performance for different solar cell choices with minimized energy loss through the interface.