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The Impact of Nanostructured Silicon and Hybrid Materials on the Thermoelectric Performance of Thermoelectric Devices: Review. ENERGIES 2022. [DOI: 10.3390/en15155363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Nanostructured materials remarkably improve the overall properties of thermoelectric devices, mainly due to the increase in the surface-to-volume ratio. This behavior is attributed to an increased number of scattered phonons at the interfaces and boundaries of the nanostructures. Among many other materials, nanostructured Si was used to expand the power generation compared to bulk crystalline Si, which leads to a reduction in thermal conductivity. However, the use of nanostructured Si leads to a reduction in the electrical conductivity due to the formation of low dimensional features in the heavily doped Si regions. Accordingly, the fabrication of hybrid nanostructures based on nanostructured Si and other different nanostructured materials constitutes another strategy to combine a reduction in the thermal conductivity while keeping the good electrical conduction properties. This review deals with the properties of Si-based thermoelectric devices modified by different nanostructures and hybrid nanostructured materials.
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Fabrication of Zinc Oxide and Nanostructured Porous Silicon Composite Micropatterns on Silicon. COATINGS 2020. [DOI: 10.3390/coatings10060529] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The luminescent properties of zinc oxide (ZnO) and nanostructured porous silicon (PSi) make these materials very appealing for photoemission applications. The current study reports on the fabrication of a composite of ZnO and nanostructured porous silicon micropatterns (ZnO + PSi micropatterns) onto heavily-doped silicon surfaces. The proposed composite micropattern is devoted to the future development of light-emitting diodes. The fabrication of the ZnO + PSi micropatterns was carried out in a two–step process. (1) A regular hexagonal micropattern of a photoresist/ZnO stack was fabricated by UV lithography on crystalline silicon substrates. (2) Before being lifted off the photoresist, nanostructured PSi micropatterns were fabricated by electrochemically etching the exposed areas of the silicon substrate. Subsequently, wet etching of the photoresist was carried out for the final development of the composite ZnO and PSi micropatterns. Further, thin films of ZnO and nanostructured PSi layers were characterized. In particular, their photoluminescent properties were analyzed, as well as their morphology and composition. The experimental PL results show that the ZnO layers have emission broadbands centered at (2.63 eV, blue), while the PSi layers show a band centered at (1.71 eV, red). Further, the emission peaks from the PSi layers can be tuned by changing their fabrication conditions. It was observed that the properties of the ZnO thin films are not influenced by either the surface morphology of PSi or by its PL emissions. Therefore, the PL properties of the composite ZnO + PSi micropatterns are equivalent to those featuring the addition of PSi layers and ZnO thin films. Accordingly, broadband optical emissions are expected to arise from a combination between the ZnO layer (blue band) and PSi (red band). Furthermore, the electrical losses associated with the PSi areas can be greatly reduced since ZnO is in contact with the Si surface. As a result, the proposed composite micropatterns might be attractive for many solid-state lighting applications, such as light-emitting diodes.
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