A Partial Anion Disorder in SrVO2H Induced by Biaxial Tensile Strain

Unlocking the future of brain research: MOFs, TMOs, and MOFs/TMOs for electrochemical NTMs detection and analysis

The central nervous system relies heavily on neurotransmitters (NTMs), and NTM imbalances have been linked to a wide range of neurological conditions. Thus, the development of reliable detection techniques is essential for advancing brain studies. This review offers a comprehensive analysis of metal-organic frameworks (MOFs), transition metal oxides (TMOs), and MOFs-derived TMOs (MOFs/TMOs) as materials for electrochemical (EC) sensors targeting the detection of key NTMs, specifically dopamine (DA), epinephrine (EP), and serotonin (SR). The unique properties and diverse families of MOFs and TMOs, along with their nanostructured hybrids, are discussed in the context of EC sensing. The review also addresses the challenges in detecting NTMs and proposes a systematic approach to tackle these obstacles. Despite the vast amount of research on MOFs and TMOs-based EC sensors for DA detection, the review highlights the gaps in the literature for MOFs/TMOs-based EC sensors specifically for EP and SR detection, as well as the limited research on microneedles (MNs)-based EC sensors modified with MOFs, TMOs, and MOFs/TMOs for NTMs detection. This review serves as a foundation to encourage researchers to further explore the potential applications of MOFs, TMOs, and MOFs/TMOs-based EC sensors in the context of neurological disorders and other health conditions related to NTMs imbalances.

Large Perpendicular Magnetic Anisotropy Induced by an Intersite Charge Transfer in Strained EuVO2H Films

Perovskite oxides ABO3 continue to be a major focus in materials science. Of particular interest is the interplay between A and B cations as exemplified by intersite charge transfer (ICT), which causes novel phenomena including negative thermal expansion and metal-insulator transition. However, the ICT properties were achieved and optimized by cationic substitution or ordering. Here we demonstrate an anionic approach to induce ICT using an oxyhydride perovskite, EuVO2H, which has alternating layers of EuH and VO2. A bulk EuVO2H behaves as a ferromagnetic insulator with a relatively high transition temperature (TC) of 10 K. However, the application of external pressure to the EuIIVIIIO2H bulk or compressive strain from the substrate in the thin films induces ICT from the EuIIH layer to the VIIIO2 layer due to the extended empty V dxy orbital. The ICT phenomenon causes the VO2 layer to become conductive, leading to an increase in TC that is dependent on the number of carriers in the dxy orbitals (up to a factor of 4 for 10 nm thin films). In addition, a large perpendicular magnetic anisotropy appears with the ICT for the films of <100 nm, which is unprecedented in materials with orbital-free Eu2+, opening new perspectives for applications. The present results provide opportunities for the acquisition of novel functions by alternating transition metal/rare earth layers with heteroanions.

Microstructural Activation of a Topochemical Reduction Reaction

The progress of the topochemical reduction reaction that converts LaSrNiRuO₆ into LaSrNiRuO₄ depends on the synthesis conditions used to prepare the oxidized phase. Samples of LaSrNiRuO₆ that have been quenched from high temperature can be readily and rapidly converted into LaSrNiRuO₄. In contrast, samples that have been slow-cooled cannot be completely reduced. This reactivity difference is attributed to the differing microstructures of the quenched and slow-cooled samples, with the former having much smaller average crystalline domain sizes and larger lattice strains than the latter. A mechanism to explain this effect is presented, in which the greater "plasticity" of small crystalline domains helps lower the activation energy of the reduction reaction. In addition, we propose that the enhanced lattice strain in quenched samples also acts to destabilize the host phase, further enhancing reactivity. These observations suggest that the microstructure of a material can be used to "activate" topochemical reactions in the solid state, expanding the scope of phases that can be prepared by this type of reaction.

High-Pressure and High-Temperature Synthesis of Anion-Disordered Vanadium Perovskite Oxyhydrides

Crystallographic order-disorder phenomena in solid state compounds are of fundamental interest due to intimate relationship between the structure and properties. Here, by using high-pressure and high-temperature synthesis, we obtained vanadium perovskite oxyhydrides Sr_1-xNa_xVO_3-yH_y (x = 0, 0.05, 0.1, 0.2) with an anion-disordered structure, which is different from anion-ordered SrVO₂H synthesized by topochemical reduction. High-pressure and high-temperature synthesis from nominal composition SrVO₂H yielded the anion-disordered perovskite SrVO_3-yH_y (y ∼ 0.4) with a significant amount of byproducts, while Na substitution resulted in the almost pure anion-disordered perovskite Sr_1-xNa_xVO_3-yH_y with an increased amount of hydride anion (y ∼ 0.7 for x = 0.2). The obtained disordered phases for x = 0.1 and 0.2 are paramagnetic with almost temperature-independent electronic conductivity, whereas anion-ordered SrVO₂H is an antiferromagnetic insulator. Although we obtained the anion-disordered perovskite under high pressure, a first-principles calculation revealed that the application of pressure stabilizes the ordered phase due to a reduced volume in the ordered structure, suggesting that a further increase of the pressure or reduction of the reaction temperature leads to the anion ordering. This study shows that anion ordering in oxyhydrides can be controlled by changing synthetic pressure and temperature.

Structural, electrical characterization and oxygen-diffusion paths in LaSrGa1−xMgxO4−δ (x = 0.0–0.2) layered perovskites: an impedance spectroscopy and neutron diffraction study

We present the diffusion pathways in perovskite-like structures. The modules of Gfourir and BondStr of Fullprof are feasible to obtain different paths in first approximation.