Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films

Advanced NH3 Detection by 1D Nanostructured La:ZnO Sensors with Novel Intrinsic p-n Shifting and Ultrahigh Baseline Stability

Due to its stability, transportability, and ability to be produced using renewable energy sources, NH3 has become an attractive option for hydrogen production and storage. Detecting NH3 is then essential, being a toxic and flammable gas that can pose dangers if not properly monitored. ZnO chemiresistive sensors have shown great potential in real NH3 monitoring applications; yet, research and development in this area are ongoing due to reported limitations, like baseline instabilities and sensitivity to environmental factors, including temperature, humidity, and interferent gases. Herein, we suggest an approach to obtain sensors with competitive performance based on ZnO semiconducting metal oxides. For this purpose, one-dimensional nanostructured pure and La-doped ZnO films were synthesized hydrothermally. Incorporating large rare earth ions, like La, into the bulk lattice of ZnO is challenging and can lead to surface defects that are influential in gas-sensing reactions. The sensors experienced a temperature-induced p-n shifting at about 100 °C, verified by the Hall effect and AC impedance measurements. The doped sensor showed exceptional stepwise baseline stability and outstanding performance at a relatively low operating temperature (150 °C) with a sensing response of 91 at best (@ 50 ppm NH3) and recorded a tolerance to water vapor up to 70% RH. Alongside p-n shifting, the enhanced performance was discussed in correlation with La doping-triggered changes in the nanostructural and surfacial properties of the films. We validated the proposed technique by producing similar sensors and performing multiple replicates to ensure consistency and reproducibility. We also introduced the fill factor concept into the gas sensor field as a new trustworthy parameter that could improve sensor performance assessment and help rate sensors based on deviation from ideality.

NH₄OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics

Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH₄OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH⁻ ion concentration was effectively controlled by the addition of an optimum amount of NH₄OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes.

Cu(In,Ga)Se2 Solar Cells with Amorphous In2O3-Based Front Contact Layers

Amorphous (a-) In₂O₃-based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J_sc) of Cu(In,Ga)Se₂ (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V_oc). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V_oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10¹⁵ to 3 × 10¹⁸ cm^-3. The decrease in FF and V_oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In₂O₃:H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In₂O₃-based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V_oc of the CIGS solar cells and the mini-modules.