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Rasadujjaman M, Zhang J, Spassky DA, Naumov S, Vishnevskiy AS, Vorotilov KA, Yan J, Zhang J, Baklanov MR. UV-Excited Luminescence in Porous Organosilica Films with Various Organic Components. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1419. [PMID: 37111004 PMCID: PMC10143820 DOI: 10.3390/nano13081419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/19/2023] [Revised: 04/06/2023] [Accepted: 04/14/2023] [Indexed: 06/19/2023]
Abstract
UV-induced photoluminescence of organosilica films with ethylene and benzene bridging groups in their matrix and terminal methyl groups on the pore wall surface was studied to reveal optically active defects and understand their origin and nature. The careful selection of the film's precursors and conditions of deposition and curing and analysis of chemical and structural properties led to the conclusion that luminescence sources are not associated with the presence of oxygen-deficient centers, as in the case of pure SiO2. It is shown that the sources of luminescence are the carbon-containing components that are part of the low-k-matrix, as well as the carbon residues formed upon removal of the template and UV-induced destruction of organosilica samples. A good correlation between the energy of the photoluminescence peaks and the chemical composition is observed. This correlation is confirmed by the results obtained by the Density Functional theory. The photoluminescence intensity increases with porosity and internal surface area. The spectra become more complicated after annealing at 400 °C, although Fourier transform infrared spectroscopy does not show these changes. The appearance of additional bands is associated with the compaction of the low-k matrix and the segregation of template residues on the surface of the pore wall.
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Affiliation(s)
- Md Rasadujjaman
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
- Department of Physics, Mawlana Bhashani Science and Technology University, Santosh, Tangail 1902, Bangladesh
| | - Jinming Zhang
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
| | - Dmitry A. Spassky
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow 119991, Russia;
- Institute of Physics, University of Tartu, 50411 Tartu, Estonia
| | - Sergej Naumov
- Leibniz Institute of Surface Engineering (IOM), 04318 Leipzig, Germany;
| | - Alexey S. Vishnevskiy
- Research and Education Center “Technological Center”, MIREA—Russian Technological University (RTU MIREA), Moscow 119454, Russia; (A.S.V.); (K.A.V.)
| | - Konstantin A. Vorotilov
- Research and Education Center “Technological Center”, MIREA—Russian Technological University (RTU MIREA), Moscow 119454, Russia; (A.S.V.); (K.A.V.)
| | - Jiang Yan
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
| | - Jing Zhang
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
| | - Mikhail R. Baklanov
- Department of Microelectronics, North China University of Technology, Beijing 100144, China; (J.Z.); (J.Y.); (M.R.B.)
- Research and Education Center “Technological Center”, MIREA—Russian Technological University (RTU MIREA), Moscow 119454, Russia; (A.S.V.); (K.A.V.)
- European Centre for Knowledge and Technology Transfer (EUROTEX), 1040 Brussels, Belgium
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Zhu H, Zan W, Chen W, Jiang W, Ding X, Li BL, Mu Y, Wang L, Garaj S, Leong DT. Defect-Rich Molybdenum Sulfide Quantum Dots for Amplified Photoluminescence and Photonics-Driven Reactive Oxygen Species Generation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200004. [PMID: 35688799 DOI: 10.1002/adma.202200004] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2022] [Revised: 05/18/2022] [Indexed: 06/15/2023]
Abstract
Transition metal dichalcogenide (TMD) quantum dots (QDs) with defects have attracted interesting chemistry due to the contribution of vacancies to their unique optical, physical, catalytic, and electrical properties. Engineering defined defects into molybdenum sulfide (MoS2 ) QDs is challenging. Herein, by applying a mild biomineralization-assisted bottom-up strategy, blue photoluminescent MoS2 QDs (B-QDs) with a high density of defects are fabricated. The two-stage synthesis begins with a bottom-up synthesis of original MoS2 QDs (O-QDs) through chemical reactions of Mo and sulfide ions, followed by alkaline etching that creates high sulfur-vacancy defects to eventually form B-QDs. Alkaline etching significantly increases the photoluminescence (PL) and photo-oxidation. An increase in defect density is shown to bring about increased active sites and decreased bandgap energy; which is further validated with density functional theory calculations. There is strengthened binding affinity between QDs and O2 due to lower gap energy (∆EST ) between S1 and T1 , accompanied with improved intersystem crossing (ISC) efficiency. Lowered gap energy contributes to assist e- -h+ pair formation and the strengthened binding affinity between QDs and 3 O2 . Defect engineering unravels another dimension of material properties control and can bring fresh new applications to otherwise well characterized TMD nanomaterials.
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Affiliation(s)
- Houjuan Zhu
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore, 117585, Singapore
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
- Centre for Advanced 2D Materials, Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore
| | - Wenyan Zan
- Institute of Molecular Science, Shanxi University, Taiyuan, 034000, P. R. China
| | - Wanli Chen
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore, 117585, Singapore
| | - Wenbin Jiang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
| | - Xianguang Ding
- Key Laboratory for Organic Electronics and Information Displays and Jiangsu Key Laboratory for Biosensors, Nanjing University of Posts and Telecommunications, Nanjing, 210023, P. R. China
| | - Bang Lin Li
- Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing, 400715, P. R. China
| | - Yuewen Mu
- Institute of Molecular Science, Shanxi University, Taiyuan, 034000, P. R. China
| | - Lei Wang
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore, 117585, Singapore
| | - Slaven Garaj
- Centre for Advanced 2D Materials, Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Department of Biomedical Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - David Tai Leong
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore, 117585, Singapore
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Vivaldo I, Ambrosio RC, López R, Flores-Méndez J, Sánchez-Gaspariano LA, Moreno M, Candia F. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process. MATERIALS 2020; 13:ma13112643. [PMID: 32531932 PMCID: PMC7321575 DOI: 10.3390/ma13112643] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2020] [Revised: 05/20/2020] [Accepted: 06/05/2020] [Indexed: 11/16/2022]
Abstract
In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. The thin films are characterized using Fourier Transform Infrared spectroscopy (FTIR), PL spectroscopy, and Energy-Dispersive X-ray Spectroscopy (EDS). According to the results of the structural characterization, it is deduced that a structural rearrangement of the amorphous matrix is carried out during the fast annealing process, which results in different degrees of oxidation on the a-Si1-xCx:H films. The PL peak position shifts towards higher energies as the temperature increases. The sample deposited with a silane/methane flux ratio of 37.5 at an Radio Frequency (RF) power of 6 W experiences an increase in PL intensity of more than nine times, with a displacement in the peak position from 2.5 eV to 2.87 eV, at 800 °C. From the PL analysis, we observe two emission bands: one centered in the near infrared and other in the visible range (with a blue peak). This study opens the possibility to use such thin films in the development of optoelectronics devices, with potential for application in solar cells.
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Affiliation(s)
- Israel Vivaldo
- Electronics Department, Benemérita Universidad Autónoma de Puebla, Puebla 72590, Mexico; (J.F.-M.); (L.A.S.-G.); (F.C.)
- Correspondence: (I.V.); (R.C.A.); Tel.: +52-(222)-229-55-00 (I.V.)
| | - Roberto C. Ambrosio
- Electronics Department, Benemérita Universidad Autónoma de Puebla, Puebla 72590, Mexico; (J.F.-M.); (L.A.S.-G.); (F.C.)
- Correspondence: (I.V.); (R.C.A.); Tel.: +52-(222)-229-55-00 (I.V.)
| | - Roberto López
- Mechatronics Department, Tecnológico de Estudios Superiores de Jocotitlán, Carretera Toluca-Atlacomulco km 44.8, Ejido de San Juan y San Agustin, Jocotitlán 50700, Mexico;
| | - Javier Flores-Méndez
- Electronics Department, Benemérita Universidad Autónoma de Puebla, Puebla 72590, Mexico; (J.F.-M.); (L.A.S.-G.); (F.C.)
- Tecnológico Nacional de México/I.T. Puebla-División de Estudios de Posgrado e Investigación, Av. Tecnológico No. 420, Maravillas, Puebla 72220, Mexico
| | - Luis A. Sánchez-Gaspariano
- Electronics Department, Benemérita Universidad Autónoma de Puebla, Puebla 72590, Mexico; (J.F.-M.); (L.A.S.-G.); (F.C.)
| | - Mario Moreno
- Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72000, Mexico;
| | - Filiberto Candia
- Electronics Department, Benemérita Universidad Autónoma de Puebla, Puebla 72590, Mexico; (J.F.-M.); (L.A.S.-G.); (F.C.)
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On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays. NANOMATERIALS 2018; 8:nano8110906. [PMID: 30400611 PMCID: PMC6267454 DOI: 10.3390/nano8110906] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2018] [Revised: 11/02/2018] [Accepted: 11/03/2018] [Indexed: 11/16/2022]
Abstract
The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200⁻600 nm variable periodicity), with high quality (~2 Å surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions' spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.
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