Quantifying the Performance of P-Type Transparent Conducting Oxides by Experimental Methods

Critical Review of Cu-Based Hole Transport Materials for Perovskite Solar Cells: From Theoretical Insights to Experimental Validation

Despite the remarkable efficiency of perovskite solar cells (PSCs), long-term stability remains the primary barrier to their commercialization. The prospect of enhancing stability by substituting organic transport layers with suitable inorganic compounds, particularly Cu-based inorganic hole-transport materials (HTMs), holds promise due to their high valence band maximum (VBM) aligning with perovskite characteristics. This review assesses the advantages and disadvantages of these five types of Cu-based HTMs. Although Cu-based binary oxides and chalcogenides face narrow bandgap issues, the "chemical modulation of the valence band" (CMVB) strategy has successfully broadened the bandgap for Cu-based ternary oxides and chalcogenides. However, Cu-based ternary oxides encounter challenges with low mobility, and Cu-based ternary chalcogenides face mismatches in VBM alignment with perovskites. Cu-based binary halides, especially CuI, exhibit excellent properties such as wider bandgap, high mobility, and defect tolerance, but their stability remains a concern. These limitations of single anion compounds are insightfully discussed, offering solutions from the perspective of practical application. Future research can focus on Cu-based composite anion compounds, which merge the advantages of single anion compounds. Additionally, mixed-cation chalcogenides such as CuxM1-xS enable the customization of HTM properties by selecting and adjusting the proportions of cation M.

High-performance p-type V2O3 films by spray pyrolysis for transparent conducting oxide applications

High-quality epitaxial p-type V2O3 thin films have been synthesized by spray pyrolysis. The films exhibited excellent electrical performance, with measurable mobility and high carrier concentration. The conductivity of the films varied between 115 and 1079 Scm-1 while the optical transparency of the films ranged from 32 to 65% in the visible region. The observed limitations in thinner films' mobility were attributed to the nanosized granular structure and the presence of two preferred growth orientations. The 60 nm thick V2O3 film demonstrated a highly competitive transparency-conductivity figure of merit compared to the state-of-the-art.

Thin SnxNiyOz Films as p-Type Transparent Conducting Oxide and Their Application in Light-Emitting Diodes

The development of good-quality p-type transparent conducting oxides (TCOs) is essential to realize the full potential of TCOs for transparent electronics. This study investigates various optical and electrical properties of Sn_xNi_yO_z under different deposition conditions to achieve high-performance p-type TCOs. We found that a film with 20% O₂/Ar deposited at room temperature exhibits the highest p-type conductivity with a carrier concentration of 2.04 × 10¹⁷ cm^-3, a resistivity of 14.01 Ωcm, and a Hall mobility of 7.7 cm² V^-1 S^-1. We also studied the elemental properties of a Sn_xNi_yO_z film and the band alignment at the Sn_xNi_yO_z/InP interface and found reasonably large values of the conduction band offset (CBO) and valence band offset (VBO). Finally, we demonstrate stable light-emitting diodes (LEDs) with n-InP nanowires (NWs) conformably coated with a p-Sn_xNi_yO_z structure. Several films and devices were fabricated and tested over a span of 6 months, and we observed similar characteristics. This confirms the stability and reliability of the films as well as the reproducibility of the LEDs. We also investigated the temperature-dependent behavior of these LEDs and observed an additional peak due to a zinc blende/wurtzite (ZB/WZ) transition at the InP substrate and NW interface at ∼98 K and below. This study provides promising results of Sn_xNi_yO_z as a potential p-type TCO candidate for applications in electronics and optoelectronics.

An In Situ Study of Precursor Decomposition via Refractive Index Sensing in p-Type Transparent Copper Chromium Oxide

Oxide semiconductors are penetrating into a wide range of energy, environmental, and electronic applications, possessing a potential to outrun currently employed semiconductors. However, an insufficient development of p-type oxides is a major obstacle against complete oxide electronics. Quite often oxide deposition is performed by the spray pyrolysis method, inexpensive to implement and therefore accessible to a large number of laboratories. Although, the complex growth chemistry and a lack of in situ monitoring during the synthesis process can complicate the growth optimization of multicomponent oxides. Here we present a concept of plasmonic, optical sensing that has been applied to spray pyrolysis oxide film growth monitoring for the first time. The proposed method utilizes a polarization based refractive index sensing platform using Au nanodimers as transducing elements. As a proof of concept, the changes in the refractive index of the grown film were extracted from individual Cu(acac)₂ and Cr(acac)₃ precursors in real time to reveal their thermal decomposition processes. Obtained activation energies give insight into the physical origin of the narrow temperature window for the synthesis of high performing p-type transparent conducting copper chromium oxide Cu _x CrO₂. The versatility of the proposed method makes it effective in the growth rate monitoring of various oxides, exploring new candidate materials and optimizing the synthesis conditions for acquisition of high performing oxides synthesized by a high throughput cost-effective method.

Highly Conductive and Visibly Transparent p-Type CuCrO2 Films by Ultrasonic Spray Pyrolysis

The development of high-performing p-type transparent conducting oxides will enable immense progress in the fabrication of optoelectronic devices including invisible electronics and all-oxide power electronics. While n-type transparent electrodes have already reached widespread industrial production, the lack of p-type counterparts with comparable transparency and conductivity has created a bottleneck for the development of next-generation optoelectronic devices. In this work, we present the fabrication of delafossite copper chromium oxide p-type transparent electrodes with outstanding optical and electrical properties. These layers were deposited using ultrasonic spray pyrolysis, a wet chemical method that is fast, simple, and scalable. Through careful screening of the deposition conditions, highly crystalline, dense, and smooth CuCrO₂ coatings were obtained. A detailed investigation of the role played by the deposition temperature and the cation ratio enabled the properties of the prepared layers to be reliably tuned, as verified using X-ray diffraction, X-ray photoelectron spectroscopy, optical spectroscopy, Hall effect measurements, and electron and atomic force microscopies. We demonstrate record conductivities for solution-processed CuCrO₂, exceeding 100 S cm^-1, and we also obtained the highest value for two separate figures of merit for p-type transparent conducting oxides. These performances position solution-deposited CuCrO₂ as the leading p-type transparent-conducting oxide currently available.

Sputtered SrxNbO3 as a UV-Transparent Conducting Film

Expanding the application space of transparent electrodes toward the ultraviolet range has been found challenging when utilizing the conventional approach to degenerately dope semiconductors with band gaps larger than ZnO or In₂O₃. Here, it is shown that the correlated metal Sr_xNbO₃ with x < 1 is ideally suited as a UV-transparent electrode material, enabling UV light-emitting diodes for a wide range of applications from water disinfection to polymer curing. It is demonstrated that Sr_xNbO₃ thin films can be grown by radio frequency (RF) sputtering and that they remain in the perovskite phase despite a sizeable Sr deficiency. The electrical and optical properties are characterized and compared to those of commonly used indium tin oxide (ITO) and Sn-doped Ga₂O₃ transparent conductor standards. Sr_xNbO₃ films were found to have sheet resistances as low as 30 Ω sq^-1 with optical transmission at a wavelength of 280 nm up to 86%, marking a two-order-of-magnitude increase over the performance of traditional UV-transparent conductors. The compatibility of Sr_xNbO₃ with a physical vapor deposition technique that is widely employed in the transparent conductor coating industry along with the robustness of the highly electrically conducting and optically transparent perovskite phase makes it an ideal transparent electrode for applications in the UV spectrum.

p-type transparent superconductivity in a layered oxide

Development of p-type transparent conducting materials has been a challenging issue. The known p-type transparent conductors unsatisfy both of high transparency and high conductivity nor exhibit superconductivity. Here, we report on epitaxial synthesis, excellent p-type transparent conductivity, and two-dimensional superconductivity of Li_1-x NbO₂. The LiNbO₂ epitaxial films with NbO₂ sheets parallel to (111) plane of cubic MgAl₂O₄ substrates were stabilized by heating amorphous films. The hole doping associated with Li⁺ ion deintercalation triggered superconductivity below 4.2 kelvin. Optical measurements revealed that the averaged transmittance to the visible light of ~100-nanometer-thick Li_1-x NbO₂ was ~77%, despite the large number of hole carriers exceeding 10²² per cubic centimeter. These results indicate that Li_1-x NbO₂ is a previously unknown p-type transparent superconductor, in which strongly correlated electrons at the largely isolated Nb 4d _z2 band play an important role for the high transparency.

Towards sustainable and efficient p-type metal oxide semiconductor materials in dye-sensitised photocathodes for solar energy conversion

In order to meet the ever-growing global energy demand for affordable and clean energy, it is essential to provide this energy by renewable resources and consider the eco-efficiency of the production and abundance of the utilised materials. While this is seldom discussed in the case of technologies still in the research stage, addressing the issue of sustainability is key to push research in the right direction. Here we provide an overview of the current p-type metal oxide semiconductor materials in dye-sensitised photocathodes, considering element abundance, synthetic methods and large scale fabrication as well as the underlying physical properties that are necessary for efficient solar harvesting devices.

New p-type Al-substituted SrSnO3 perovskites for TCO applications?

Novel p-type SrSn_1-xAl_xO₃ (x = 0, 0.2, 0.5) perovskites are presented as potential candidates for electro-optical applications. A combined experimental and theoretical study reveals that chemical substitutions can be used as a lever to stabilize oxygen holes in the valence band.

Tuneable interplay between atomistic defects morphology and electrical properties of transparent p-type highly conductive off-stoichiometric Cu-Cr-O delafossite thin films

Off-stoichiometric copper chromium delafossites demonstrate the highest values of electric conductivity among the p-type transparent conducting oxides. Morphological and structural changes in Cu_0.66Cr_1.33O₂ upon annealing processes are investigated. Chained copper vacancies were previously suggested as source of the high levels of doping in this material. High resolution Helium Ion Microscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy reveal a significant rearrangement of copper and chromium after the thermal treatments. Furthermore, Positron Annihilation Spectroscopy evidences the presence of vacancy defects within the delafossite layers which can be assigned to the Cu vacancy chains whose concentration decreases during the thermal process. These findings further confirm these chained vacancies as source of the p-type doping and suggest that the changes in electrical conductivities within the off-stoichiometric copper based delafossites are triggered by elemental rearrangements.

Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides-The Case for Raman Spectroscopy

The electronic and optical properties of transparent conducting oxides (TCOs) are closely linked to their crystallographic structure on a macroscopic (grain sizes) and microscopic (bond structure) level. With the increasing drive towards using reduced film thicknesses in devices and growing interest in amorphous TCOs such as n-type InGaZnO4 (IGZO), ZnSnO3 (ZTO), p-type CuxCrO2, or ZnRh2O4, the task of gaining in-depth knowledge on their crystal structure by conventional X-ray diffraction-based measurements are becoming increasingly difficult. We demonstrate the use of a focal shift based background subtraction technique for Raman spectroscopy specifically developed for the case of transparent thin films on amorphous substrates. Using this technique we demonstrate, for a variety of TCOs CuO, a-ZTO, ZnO:Al), how changes in local vibrational modes reflect changes in the composition of the TCO and consequently their electronic properties.