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Jimenéz-Vivanco MR, García G, Carrillo J, Agarwal V, Díaz-Becerril T, Doti R, Faubert J, Lugo JE. Porous Si-SiO 2 based UV Microcavities. Sci Rep 2020; 10:2220. [PMID: 32041997 PMCID: PMC7010755 DOI: 10.1038/s41598-020-59001-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2019] [Accepted: 01/23/2020] [Indexed: 11/18/2022] Open
Abstract
Obtaining silicon-based photonic-structures in the ultraviolet range would expand the wavelength bandwidth of silicon technology, where it is normally forbidden. Herein, we fabricated porous silicon microcavities by electrochemical etching of alternating high and low refraction index layers; and were carefully subjected to two stages of dry oxidation at 350 °C for 30 minutes and 900 °C, with different oxidation times. In this way, we obtained oxidized porous silicon that induces a shift of a localized mode in the ultraviolet region. The presence of Si-O-Si bonds was made clear by FTIR absorbance spectra. High-quality oxidized microcavities were shown by SEM, where their mechanical stability was clearly visible. We used an effective medium model to predict the refractive index and optical properties of the microcavities. The model can use either two or three components (Si, SiO2, and air). The latter predicts that the microcavities are made almost completely of SiO2, implying less photon losses in the structure. The theoretical photonic-bandgap structure and localized photonic mode location showed that the experimental spectral peaks within the UV photonic bandgap are indeed localized modes. These results support that our oxidation process is very advantageous to obtain complex photonic structures in the UV region.
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Affiliation(s)
- María R Jimenéz-Vivanco
- Centro de Investigación en Dispositivos Semiconductores, ICUAP, BUAP, Ciudad Universitaria., Puebla, Puebla, 72570, México
| | - Godofredo García
- Centro de Investigación en Dispositivos Semiconductores, ICUAP, BUAP, Ciudad Universitaria., Puebla, Puebla, 72570, México
| | - Jesús Carrillo
- Centro de Investigación en Dispositivos Semiconductores, ICUAP, BUAP, Ciudad Universitaria., Puebla, Puebla, 72570, México
| | - Vivechana Agarwal
- CIICAP- Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col Chamilpa, Cuernavaca, Morelos, México
| | - Tomás Díaz-Becerril
- Centro de Investigación en Dispositivos Semiconductores, ICUAP, BUAP, Ciudad Universitaria., Puebla, Puebla, 72570, México
| | - Rafael Doti
- Faubert Lab, École d'optométrie, Université de Montréal, Montréal, 3744 Jean Brillant, Montréal, H3T 1P1, Québec, Canada
| | - Jocelyn Faubert
- Faubert Lab, École d'optométrie, Université de Montréal, Montréal, 3744 Jean Brillant, Montréal, H3T 1P1, Québec, Canada
| | - J E Lugo
- Faubert Lab, École d'optométrie, Université de Montréal, Montréal, 3744 Jean Brillant, Montréal, H3T 1P1, Québec, Canada.
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Jimenéz-Vivanco MR, García G, Carrillo J, Morales-Morales F, Coyopol A, Gracia M, Doti R, Faubert J, Lugo JE. Porous Si-SiO 2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector. NANOMATERIALS 2020; 10:nano10020222. [PMID: 32012926 PMCID: PMC7075018 DOI: 10.3390/nano10020222] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2019] [Revised: 01/07/2020] [Accepted: 01/09/2020] [Indexed: 01/07/2023]
Abstract
Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the filters only attenuated the responsivity. All microcavities had a localized mode close to 360 nm in the UV-A range, and this meant that porous Si-SiO2 filters cut off the photodetection range of the photodetector from 300 to 350 nm, where microcavities showed low transmission. In the short-wavelength range, the photons were absorbed and did not contribute to the photocurrent. Therefore, the density of recombination centers was very high, and the photodetector sensitivity with a filter was lower than the photodetector without a filter. The maximum transmission measured at the localized mode (between 356 and 364 nm) was dominant in the UV-A range and enabled the flow of high energy photons. Moreover, the filters favored light transmission with a wavelength from 390 nm to 510 nm, where photons contributed to the photocurrent. Our filters made the photodetector more selective inside the specific UV range of wavelengths. This was a novel result to the best of our knowledge.
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Affiliation(s)
- María R. Jimenéz-Vivanco
- Semiconductor Devices Research Center, ICUAP, BUAP, Ciudad Universitaria, Puebla Pue. C.P. 72570, Mexico; (M.R.J.-V.); (G.G.); (J.C.); (A.C.)
| | - Godofredo García
- Semiconductor Devices Research Center, ICUAP, BUAP, Ciudad Universitaria, Puebla Pue. C.P. 72570, Mexico; (M.R.J.-V.); (G.G.); (J.C.); (A.C.)
| | - Jesús Carrillo
- Semiconductor Devices Research Center, ICUAP, BUAP, Ciudad Universitaria, Puebla Pue. C.P. 72570, Mexico; (M.R.J.-V.); (G.G.); (J.C.); (A.C.)
| | - Francisco Morales-Morales
- Optics Research Center, A.C., Loma del Bosque 115, Col. Lomas del Campestre León, León C.P. 37150, Gto, Mexico;
| | - Antonio Coyopol
- Semiconductor Devices Research Center, ICUAP, BUAP, Ciudad Universitaria, Puebla Pue. C.P. 72570, Mexico; (M.R.J.-V.); (G.G.); (J.C.); (A.C.)
| | - Miguel Gracia
- IFUAP, Benemérita Universidad Autónoma de Puebla, Ed. IF2, Col. San Manuel, Puebla C.P. 72570, Mexico;
| | - Rafael Doti
- Faubert Lab, School of Optometry, University de Montreal, Montreal, QC H3T 1P1, Canada; (R.D.); (J.F.)
| | - Jocelyn Faubert
- Faubert Lab, School of Optometry, University de Montreal, Montreal, QC H3T 1P1, Canada; (R.D.); (J.F.)
| | - J. Eduardo Lugo
- Faubert Lab, School of Optometry, University de Montreal, Montreal, QC H3T 1P1, Canada; (R.D.); (J.F.)
- Correspondence: ; Tel.: +1-514-343-6111 (ext. 1685)
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Myndrul V, Iatsunskyi I. Nanosilicon-Based Composites for (Bio)sensing Applications: Current Status, Advantages, and Perspectives. MATERIALS (BASEL, SWITZERLAND) 2019; 12:E2880. [PMID: 31489913 PMCID: PMC6766027 DOI: 10.3390/ma12182880] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/12/2019] [Revised: 09/02/2019] [Accepted: 09/03/2019] [Indexed: 12/18/2022]
Abstract
This review highlights the application of different types of nanosilicon (nano-Si) materials and nano-Si-based composites for (bio)sensing applications. Different detection approaches and (bio)functionalization protocols were found for certain types of transducers suitable for the detection of biological compounds and gas molecules. The importance of the immobilization process that is responsible for biosensor performance (biomolecule adsorption, surface properties, surface functionalization, etc.) along with the interaction mechanism between biomolecules and nano-Si are disclosed. Current trends in the fabrication of nano-Si-based composites, basic gas detection mechanisms, and the advantages of nano-Si/metal nanoparticles for surface enhanced Raman spectroscopy (SERS)-based detection are proposed.
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Affiliation(s)
- Valerii Myndrul
- NanoBioMedical Centre, Adam Mickiewicz University, 3, Wszechnicy Piastowskiej Str., 61-614 Poznan, Poland.
| | - Igor Iatsunskyi
- NanoBioMedical Centre, Adam Mickiewicz University, 3, Wszechnicy Piastowskiej Str., 61-614 Poznan, Poland.
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