Nitrogen-Doped Cu2O Thin Films for Photovoltaic Applications

Band-gap engineering of zirconia by nitrogen doping in reactive HiPIMS: a step forward in developing innovative technologies for photocatalysts synthesis

In the global context of climate change and carbon neutrality, this work proposes a strategy to improve the light absorption of photocatalytic water-splitting materials into the visible spectrum by anion doping. In this framework, reactive high power impulse magnetron sputtering (HiPIMS) of a pure Zr target in Ar/N2/O2 gas mixture was used for the deposition of crystalline zirconium oxynitride (ZrO2-xNx) thin films with variable nitrogen doping concentration and energy band-gap. The nitrogen content into these films was controlled by the discharge pulsing frequency, which controls the target surface poisoning and peak discharge current. The role of the nitrogen doping on the optical, structural, and photocatalytic properties of ZrO2-xNx films was investigated. UV-Vis-NIR spectroscopy was employed to investigate the optical properties and to assess the energy band-gap. Surface chemical analysis was performed using X-ray photoelectron spectroscopy, while structural analysis was carried out by X-ray diffraction. The increase in the pulse repetition frequency determined a build-up in the nitrogen content of the deposited ZrO2-xNx thin films from ∼10 to ∼25 at.%. This leads to a narrowing of the optical band-gap energy from 3.43 to 2.20 eV and endorses efficient absorption of visible light. Owing to its narrow bandgap, ZrO2-xNx thin films obtained by reactive HiPIMS can be used as visible light-driven photocatalyst. For the selected processing conditions (pulsing configuration and gas composition), it was found that reactive HiPIMS can suppress the hysteresis effect for a wide range of frequencies, leading to a stable deposition process with a smooth transition from compound to metal-sputtering mode.

Cuprous Oxide Thin Films Implanted with Chromium Ions—Optical and Physical Properties Studies

Cuprous oxide is a semiconductor with potential for use in photocatalysis, sensors, and photovoltaics. We used ion implantation to modify the properties of Cu₂O oxide. Thin films of Cu₂O were deposited with magnetron sputtering and implanted with low-energy Cr ions of different dosages. The X-ray diffraction method was used to determine the structure and composition of deposited and implanted films. The optical properties of the material before and after implantation were studied using spectrophotometry and spectroscopic ellipsometry. The investigation of surface topography was performed with atomic force microscopy. The implantation had little influence on the atomic lattice constant of the oxide structure, and no clear dependence of microstrain or crystalline size on the dose of implantation was found. The appearance of phase change was observed, which could have been caused by the implantation. Ellipsometry measurements showed an increase in the total thickness of the sample with an increase in the amount of implanted Cr ions, which indicates the influence of implantation on the properties of the surface and subsurface region. The refractive index n, extinction coefficient k, and absorption coefficient optical parameters show different energy dependences related to implantation dose.

Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

In recent years, solar cells made of tungsten diselenide (WSe₂) have received comprehensive consideration because of their good photoelectric properties. The planar WSe₂-based heterojunction solar cell with a preliminary device structure of Au/WSe₂/electron transport layer (ETL)/FTO/Al was designed and investigated numerically by SCAPS-1D. CdS ETL is widely used in thin film solar cells (TFSCs). Due to environmental issues and the low band gap (2.42 eV) of CdS ETL, an alternative to CdS ETL was being explored for WSe₂ solar cells. In this work, the photovoltaic (PV) performance of the WSe₂-based TFSCs with different ETLs were simulated, analyzed and compared, in an attempt to track down a suitable substitute for the CdS ETL. In addition to CdS ETL, ZnO, TiO₂ and SnO₂ ETLs were independently used to simulate the PV performance of WSe₂-based TCSCs. In the wake of analyzing the J-V curves of different cell configurations, SnO₂ ETL yielded the best results with PCE of 27.14 % for the single-junction WSe₂/SnO₂ TFSC. Then, our simulation predicted that the PV performance of the WSe₂ device can be improved significantly by using N doped Cu₂O as a hole transport layer (HTL). The optimized WSe₂ device with SnO₂ ETL and Cu₂O:N HTL showed an improved PCE of 33.84 % with very good performance stability at higher temperature. Furthermore, this article proposes to use the Au/Cu₂O:N/WSe₂/SnO₂/FTO/Al heterojunction solar cell in bifacial mode and PV performance of the proposed bifacial device have been also studied using SCAPS-1D. Bifacial WSe₂ device leads to enhanced PV performance with bifaciality factor for PCE is 83.64 %. Bifacial gain of the proposed device under simultaneous irradiation of 1 sun from the front and 20 % of 1 sun from back side is found to be 13.95 %. Our simulation predicts that the proposed WSe₂ bifacial solar cell is capable of converting solar energy into electricity with an efficiency of about 38.38 %.

Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties

In this study, we report the segregation of magnesium in the grain boundaries of magnesium-doped cuprous oxide (Cu₂O:Mg) thin films as revealed by atom probe tomography and the consequences of the dopant presence on the temperature-dependent Hall effect properties. The incorporation of magnesium as a divalent cation was achieved by aerosol-assisted metal organic chemical vapour deposition, followed by thermal treatments under oxidizing conditions. We observe that, in comparison with intrinsic cuprous oxide, the electronic transport is improved in Cu₂O:Mg with a reduction of resistivity to 13.3 ± 0.1 Ω cm, despite the reduction of hole mobility in the doped films, due to higher grain-boundary scattering. The Hall carrier concentration dependence with temperature showed the presence of an acceptor level associated with an ionization energy of 125 ± 9 meV, similar to the energy value of a large size impurity-vacancy complex. Atom probe tomography shows a magnesium incorporation of 5%, which is substantially present at the grain boundaries of the Cu₂O.

High Mobility Reactive Sputtered CuxO Thin Film for Highly Efficient and Stable Perovskite Solar Cells

Copper oxide (CuxO) films are considered to be an attractive hole-transporting material (HTM) in the inverted planar heterojunction perovskite solar cells due to their unique optoelectronic properties, including intrinsic p-type conductivity, high mobility, low-thermal emittance, and energy band level matching with the perovskite (PS) material. In this study, the potential of reactive sputtered CuxO thin films with a thickness of around 100 nm has been extensively investigated as a promising HTM for effective and stable perovskite solar cells. The as-deposited and annealed films have been characterized by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Photoluminescence (PL), UV-Vis spectroscopy, and Hall-effect measurement techniques. The significant change in structural and optoelectronic properties has been observed as an impact of the thermal annealing process. The phase conversion from Cu2O to CuO, including grain size increment, was observed upon thermal annealing. The transmittance and optical bandgap were found to vary with the films’ crystallographic transformation. The predominant p-type conductivity and optimum annealing time for higher mobility have been confirmed from the Hall measurement. Films’ optoelectrical properties were implemented in the complete perovskite solar cell for numerical analysis. The simulation results show that a 40 min annealed CuxO film yields the highest efficiency of 22.56% with a maximum open-circuit voltage of 1.06 V.

Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

This study is aimed at increasing the performance and reliability of silicon-based heterojunction solar cells with advanced methods. This is achieved by a numerical electro-optical modeling and reliability analysis for such solar cells correlated with experimental analysis of the Cu2O absorber layer. It yields the optimization of a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model. Experimental research of N-doped Cu2O thin films was dedicated to two main activities: (1) fabrication of specific samples by DC magnetron sputtering and (2) detailed characterization of the analyzed samples. This last investigation was based on advanced techniques: morphological (scanning electron microscopy—SEM and atomic force microscopy—AFM), structural (X-ray diffraction—XRD), and optical (spectroscopic ellipsometry—SE and Fourier-transform infrared spectroscopy—FTIR). This approach qualified the heterojunction solar cell based on cuprous oxide with nitrogen as an attractive candidate for high-performance solar devices. A reliability analysis based on Weibull statistical distribution establishes the degradation degree and failure rate of the studied solar cells under stress and under standard conditions.