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Chen M, Wang C, Tian XH, Tang J, Gu X, Qian G, Jia K, Liu HY, Yan Z, Ye Z, Yin Z, Zhu SN, Xie Z. Wafer-Scale Periodic Poling of Thin-Film Lithium Niobate. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1720. [PMID: 38673078 PMCID: PMC11051387 DOI: 10.3390/ma17081720] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/01/2024] [Accepted: 04/04/2024] [Indexed: 04/28/2024]
Abstract
Periodically poled lithium niobate on insulator (PPLNOI) offers an admirably promising platform for the advancement of nonlinear photonic integrated circuits (PICs). In this context, domain inversion engineering emerges as a key process to achieve efficient nonlinear conversion. However, periodic poling processing of thin-film lithium niobate has only been realized on the chip level, which significantly limits its applications in large-scale nonlinear photonic systems that necessitate the integration of multiple nonlinear components on a single chip with uniform performances. Here, we demonstrate a wafer-scale periodic poling technique on a 4-inch LNOI wafer with high fidelity. The reversal lengths span from 0.5 to 10.17 mm, encompassing an area of ~1 cm2 with periods ranging from 4.38 to 5.51 μm. Efficient poling was achieved with a single manipulation, benefiting from the targeted grouped electrode pads and adaptable comb line widths in our experiment. As a result, domain inversion is ultimately implemented across the entire wafer with a 100% success rate and 98% high-quality rate on average, showcasing high throughput and stability, which is fundamentally scalable and highly cost-effective in contrast to traditional size-restricted chiplet-level poling. Our study holds significant promise to dramatically promote ultra-high performance to a broad spectrum of applications, including optical communications, photonic neural networks, and quantum photonics.
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Affiliation(s)
- Mengwen Chen
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, School of Physics, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; (M.C.); (C.W.); (K.J.); (H.-Y.L.); (S.-N.Z.)
| | - Chenyu Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, School of Physics, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; (M.C.); (C.W.); (K.J.); (H.-Y.L.); (S.-N.Z.)
| | - Xiao-Hui Tian
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, School of Physics, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; (M.C.); (C.W.); (K.J.); (H.-Y.L.); (S.-N.Z.)
| | - Jie Tang
- National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing Electronic Devices Institute, Nanjing 210016, China; (J.T.); (X.G.); (G.Q.)
| | - Xiaowen Gu
- National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing Electronic Devices Institute, Nanjing 210016, China; (J.T.); (X.G.); (G.Q.)
| | - Guang Qian
- National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing Electronic Devices Institute, Nanjing 210016, China; (J.T.); (X.G.); (G.Q.)
| | - Kunpeng Jia
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, School of Physics, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; (M.C.); (C.W.); (K.J.); (H.-Y.L.); (S.-N.Z.)
| | - Hua-Ying Liu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, School of Physics, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; (M.C.); (C.W.); (K.J.); (H.-Y.L.); (S.-N.Z.)
| | - Zhong Yan
- School of Integrated Circuits, Nanjing University of Information Science and Technology, Nanjing 210044, China;
- NanZhi Institute of Advanced Optoelectronic Integration Technology Co., Ltd., Nanjing 210018, China; (Z.Y.)
| | - Zhilin Ye
- NanZhi Institute of Advanced Optoelectronic Integration Technology Co., Ltd., Nanjing 210018, China; (Z.Y.)
| | - Zhijun Yin
- NanZhi Institute of Advanced Optoelectronic Integration Technology Co., Ltd., Nanjing 210018, China; (Z.Y.)
| | - Shi-Ning Zhu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, School of Physics, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; (M.C.); (C.W.); (K.J.); (H.-Y.L.); (S.-N.Z.)
| | - Zhenda Xie
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, School of Physics, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; (M.C.); (C.W.); (K.J.); (H.-Y.L.); (S.-N.Z.)
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Study of Lapping and Polishing Performance on Lithium Niobate Single Crystals. MATERIALS 2021; 14:ma14174968. [PMID: 34501054 PMCID: PMC8434517 DOI: 10.3390/ma14174968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Revised: 08/25/2021] [Accepted: 08/26/2021] [Indexed: 11/17/2022]
Abstract
Recently, the range of crystal materials used in industrial microelectronics has significantly increased. Lithium niobate single crystals are most often used in integrated optics, due to the high values of optical and electro-optical coefficients. An integral-optical circuit based on a lithium niobate single crystal is a key element in the production of local high-precision fiber-optic gyroscopic devices used in civil and military aviation and marine technologies. In the process of production of an integral-optical circuit, the most labor-intensive operations are mechanical processing, such as lapping and polishing. Technological problems that arise while performing these operations are due to the physical and mechanical properties of the material, as well as target surface finish. This work shows the possibility to achieve the required surface quality of lithium niobate single crystal plates by mechanization of lapping and polishing process in this article.
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Hu J, Li C, Guo C, Lu C, Lau APT, Chen P, Liu L. Folded thin-film lithium niobate modulator based on a poled Mach-Zehnder interferometer structure. OPTICS LETTERS 2021; 46:2940-2943. [PMID: 34129579 DOI: 10.1364/ol.426083] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2021] [Accepted: 05/13/2021] [Indexed: 06/12/2023]
Abstract
The thin-film lithium niobate structure has been used recently to construct compact and high-performance electro-optical modulators. Due to the moderate electro-optical coefficient of the lithium niobate material, the device length of such a modulator is still long, a few centimeters usually. Here, a folded Mach-Zehnder interferometer based modulator on x-cut thin-film lithium niobate is demonstrated. An effective poling procedure is developed to activate the device. The proposed modulator structure can shorten the device length without affecting its performance. The measured VπL product of a fabricated and completely poled folded modulator is about 2.74V⋅cm, and the 3 dB electro-optical bandwidth is about 55 GHz. They are close to those of a conventional Mach-Zehnder modulator with a straight modulation section.
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