Thin Diamond Film on Silicon Substrates for Pressure Sensor Fabrication

Magnetic Resonance Study of Bulky CVD Diamond Disc

Diamonds produced using chemical vapor deposition (CVD) have found many applications in various fields of science and technology. Many applications involve polycrystalline CVD diamond films of micron thicknesses. However, a variety of optical, thermal, mechanical, and radiation sensing applications require more bulky CVD diamond samples. We report the results of a magnetic resonance and structural study of a thick, sizable polycrystalline CVD diamond disc, both as-prepared and treated with e-beam irradiation/high-temperature annealing, as well as gamma irradiation. The combination of various magnetic resonance techniques reveals and enables the attribution of a plentiful collection of paramagnetic defects of doublet and triplet spin origin. Analysis of spectra, electron, and nuclear spin relaxation, as well as nuclear spin diffusion, supports the conclusion of significant macro- and micro-inhomogeneities in the distribution of nitrogen-related defects.

Optical Pump-Terahertz Probe Diagnostics of the Carrier Dynamics in Diamonds

Diamond is a promising material for terahertz applications. In this work, we use a non-invasive optical pump-terahertz probe method to experimentally study the photoinduced carrier dynamics in doped diamond monocrystals and a new diamond-silicon composite. The chemical vapor deposited diamond substrate with embedded silicon microparticles showed two photoinduced carrier lifetimes (short lifetime on the order of 4 ps and long lifetime on the order of 200 ps). The short lifetime is several times less than in boron-doped diamonds and nitrogen-doped diamonds which were grown using a high temperature-high pressure technique. The observed phenomenon is explained by the transport of photoexcited carriers across the silicon-diamond interface, resulting in dual relaxation dynamics. The observed phenomenon could be used for ultrafast flexible terahertz modulation.

Fabry-Perot Pressure Sensors Based on Polycrystalline Diamond Membranes

Pressure sensors based on diamond membranes were designed and tested for gas pressure measurement up to 6.8 MPa. The diamond film (2” diameter, 6 μm thickness)—grown by microwave plasma chemical vapor deposition on a silicon substrate—was a starting material to produce an array of membranes with different diameters in the 130–400 μm range, in order to optimize the sensor performance. Each 5 mm × 5 mm sensing element was obtained by subsequent silicon slicing. The fixed film thickness, full-scale pressure range, and sensor sensitivity were established by a proper design of the diameter of diamond membrane which represents the sensing element for differential pressure measurement. The pressure-induced deflection of the membrane was optically measured using a Fabry-Pérot interferometer formed by a single mode optical fiber front surface and the deflecting diamond film surface. The optical response of the system was numerically simulated using geometry and the elastic properties of the diamond diaphragm, and was compared with the experiments. Depending on the diamond membrane’s diameter, the fabricated sensors displayed a good modulation depth of response over different full-scale ranges, from 3 to 300 bar. In view of the excellent mechanical, thermal, and chemical properties of diamond, such pressure sensors could be useful for performance in a harsh environment.

Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation

This paper outlines notable advances in the wire electrical discharge machining of polycrystalline silicon workpieces for wafer preparation. Our use of assisting electrodes permits the transfer of aluminum particles to the machined surface of the polycrystalline silicon workpieces, to enhance conductivity and alter surface topography regardless of the silicon’s crystallographic structure and diamond-type lattice. This in-process surface modification technique was shown to promote material removal and simultaneously preserve the integrity of the machined surfaces with preferable surface textures. In the validation experiment, the 25 mm-thick assisting electrodes deposited a notable concentration of aluminium on the machined surface (~3.87 wt %), which greatly accelerated the rate of material removal (~9.42 mg/s) with minimal surface roughness (S_a ~5.49 μm) and moderate skewness (−0.23). The parameter combination used to obtain the optimal surface roughness (S_a 2.54 μm) was as follows: open voltage (80 V), electrical resistance (1.7 Ω), pulse-on time (30 μs), and electrode thickness (15 mm). In multiple objective optimization, the preferred parameter combination (open voltage = 80 V, resistance = 1.4 Ω, pulse-on time = 60 μs, and assisting electrode thickness = 25 mm) achieved the following appreciable results: surface modification of 3.26 ± 0.61 wt %, material removal rate of 7.08 ± 2.2 mg/min, and surface roughness of S_a = 4.3 ± 1.67 μm.