Piezoelectric Energy Harvester Based on LiNbO3 Thin Films

Tuning ZnO-based piezoelectric nanogenerator efficiency through n-ZnO/p-NiO bulk interfacing

ZnO based piezoelectric nanogenerators (PENG) hold immense potential for harvesting ambient vibrational mechanical energy into electrical energy, offering sustainable solutions in the field of self-powered sensors, wearable electronics, human-machine interactions etc. In this study, we have developed flexible ZnO-based PENGs by incorporating ZnO microparticles into PDMS matrix, with ZnO concentration ranging from 5 to 25 wt%. Among these, the PENG containing 15 wt% ZnO exhibited the best performance with an open-circuit output voltage/short-circuit current of ~ 42.4 V/2.4 µA. To further enhance the output performance of PENG, p-type NiO was interfaced with ZnO in a bulk hetero-junction geometry. The concentration of NiO was varied from 5 to 20 wt% with respect to ZnO and incorporated into the PDMS matrix to fabricate the PENGs. The PENG containing 10 wt% NiO exhibits the best performance with an open-circuit output voltage/short-circuit current of ~ 65 V/4.1 µA under loading conditions of 30 N and 4 Hz. The PENG exhibiting the best performance demonstrates a maximum instantaneous output power density ~ 37.9 µW/cm2 across a load resistance of 20 MΩ under loading conditions of 30 N and 4 Hz, with a power density per unit force and Hertz of about ~ 0.32 µW/cm2·N·Hz. The enhanced output performance of the PENG is attributed to the reduction in free electron concentration, which suppresses the internal screening effect of the piezopotential. To assess the practical utility of the optimized PENG, we tested the powering capability by charging various commercial capacitors and used the stored energy to illuminate 10 LEDs and to power a stopwatch displays. This work not only presents a straightforward, cost-effective, and scalable technique for enhancing the output performance of ZnO-based PENGs but also sheds light on its underlying mechanism.

Towards Scalable Large-Area Pulsed Laser Deposition

One of the significant limitations of the pulsed laser deposition method in the mass-production-technologies of micro- and nanoelectronic and molecular device electronic fabrication is the issue of ensuring deposition of films with uniform thickness on substrates with large diameter (more than 100 mm) since the area of the laser spot (1–5 mm²) on the surface of the ablated target is incommensurably smaller than the substrate area. This paper reports the methodology that allows to calculate the distribution profile of the film thickness over the surface substrate with a large diameter, taking into account the construction and technological parameters of the pulsed laser deposition equipment. Experimental verification of the proposed methodology showed that the discrepancy with the experiment does not exceed 8%. The modeling of various technological parameters influence on the thickness uniformity has been carried out. Based on the modeling results, recommendations and parameters are proposed for manufacturing uniform thickness films. The results allow for increasing the film thickness uniformity with the thickness distribution < 5% accounts for ~ 31% of 300 mm diameter substrate.