Strategies to Improve the Energy Storage Properties of Perovskite Lead-Free Relaxor Ferroelectrics: A Review

Conducting atomic force microscopy studies on domain wall currents of Bi5Ti3FeO15 nanodots fabricated by anodic aluminum oxide nanotemplate and sol-gel process

We investigated the local current characteristics of Bi5Ti3FeO15 (BTFO) nanodots on Nb-doped SrTiO3 substrates affected by their ferroelectric domain structures and domain walls. The BTFO nanodots with a diameter of about 50 nm were fabricated by anodic aluminum oxide nanotemplates and a BTFO sol-gel process. Based on a piezoresponse force microscope, it was confirmed that domain walls were formed in the ferroelectric domain structures of the epitaxial BTFO nanodots. Current changes due to ferroelectric tunneling junctions according to ferroelectric polarizations in epitaxial BTFO nanodots were confirmed by conduction atomic force microscopy. In particular, the domain walls formed in the epitaxial BTFO nanodots formed high currents compared to the currents in ferroelectric tunneling junctions due to polarizations. RESEARCH HIGHLIGHTS: Ferroelectric Bi5Ti3FeO15 nanodots with a diameter of 50 nm. Ferroelectric domain structures observed with piezoresponse force microscopy. High domain wall currents observed at domain boundaries observed with conducting atomic force microscopy.

Centrosymmetric to non-centrosymmetric transition in the Ca2-xMnxTi2O6 double perovskite system studied through structural analysis and dielectric properties

We have used high-pressure synthesis to synthesize samples of Ca2-xMnxTi2O6 double perovskite, where x varies between 0.2 and 1. The synthesized materials were structurally characterized with powder X-ray diffraction (XRD). Rietveld refinement of the XRD patterns was used to study the change from CaTiO3 (x = 0) to the composition CaMnTi2O6 (x = 1) where half of the Ca(II) ions are replaced by smaller Mn(II) ions. We analyzed the peak shapes in the XRD patterns, as well as lattice parameters, and it appears that smooth symmetry change from the centrosymmetric space group Pbnm to the non-centrosymmetric space group P42mc occurs between x = 0.3 and x = 0.5. We also confirmed the centrosymmetric to non-centrosymmetric transition by characterizing the dielectric properties of the materials with ferroelectric measurements.

High-Entropy Lead-Free Perovskite Bi0.2K0.2Ba0.2Sr0.2Ca0.2TiO3 Powders and Related Ceramics: Synthesis, Processing, and Electrical Properties

A novel high-entropy perovskite powder with the composition Bi0.2K0.2Ba0.2Sr0.2Ca0.2TiO3 was successfully synthesized using a modified Pechini method. The precursor powder underwent characterization through Fourier Transform Infrared Spectroscopy and thermal analysis. The resultant Bi0.2K0.2Ba0.2Sr0.2Ca0.2TiO3 powder, obtained post-calcination at 900 °C, was further examined using a variety of techniques including X-ray diffraction, Raman spectroscopy, X-ray fluorescence, scanning electron microscopy, and transmission electron microscopy. Ceramic samples were fabricated by conventional sintering at various temperatures (900, 950, and 1000 °C). The structure, microstructure, and dielectric properties of these ceramics were subsequently analyzed and discussed. The ceramics exhibited a two-phase composition comprising cubic and tetragonal perovskites. The grain size was observed to increase from 35 to 50 nm, contingent on the sintering temperature. All ceramic samples demonstrated relaxor behavior with a dielectric maximum that became more flattened and shifted towards lower temperatures as the grain size decreased.

Achieving Ultrahigh Energy Storage Performance for NaNbO3-Based Lead-Free Antiferroelectric Ceramics via the Coupling of the Stable Antiferroelectric R Phase and Nanodomain Engineering

NaNbO3(NN)-based lead-free eco-friendly antiferroelectric (AFE) ceramics with an extremely high maximum polarization (Pm) are believed to be a promising alternative to traditional lead-based ceramics. Nevertheless, the high energy dissipation resulting from the large polarization hysteresis, which arises from the AFE-ferroelectric (FE) phase transition, poses a great challenge to the application of this promising ceramic. Herein, an excellent recoverable energy storage density (Wrec) was attained by intentionally designing a (0.86 - x) NaNbO3-0.14CaTiO3-xBiMg2/3Nb1/3O3 (NN-CT-xBMN) relaxor antiferroelectric ceramic, attributed to the synergistic effect of the stable AFE R phase and nanodomain engineering to overcome the bottleneck. The obtained results illustrate that the inclusion of BMN causes the transition from AFE microdomains to nanodomains and stabilizes the relaxor AFE orthorhombic R phase, which generates a highly stable polarization field response with low hysteresis and delays the AFE-FE phase transition, thus improving energy storage density. As a consequence, a high Wrec of 5.41 J cm-3 with an excellent conversion efficiency η of 86.7% was obtained in the NN-CT-0.08BMN ceramic. Moreover, the NN-CT-0.08BMN ceramic exhibits superior stability in temperature (25-150 °C), frequency (1-600 Hz), and fatigue behavior (10°-104 cycles) together with a large current density (CD = 810 A cm-2), ultrahigh power density (PD = 118 MW cm-3), and ultrafast discharge rate (t0.9 < 0.7 μs). This superior energy storage density, coupled with outstanding stability, suggests that the NN-CT-0.08BMN ceramic has the potential to be a promising candidate for pulsed power applications and power electronics.

Influence of Lattice Mismatch on Structural and Functional Properties of Epitaxial Ba0.7Sr0.3TiO3 Thin Films

Substrate-induced strains can significantly influence the structural properties of epitaxial thin films. In ferroelectrics, this might lead to significant changes in the functional properties due to the strong electromechanical coupling in those materials. To study this in more detail, epitaxial Ba0.7Sr0.3TiO3 films, which have a perovskite structure and a structural phase transition close to room temperature, were grown with different thicknesses on REScO3 (RE-rare earth element) substrates having a smaller lattice mismatch compared to SrTiO3. A fully strained SrRuO3 bottom electrode and Pt top contacts were used to achieve a capacitor-like architecture. Different X-ray diffraction techniques were applied to study the microstructure of the films. Epitaxial films with a higher crystalline quality were obtained on scandates in comparison to SrTiO3, whereas the strain state of the functional layer was strongly dependent on the chosen substrate and the thickness. Differences in permittivity and a non-linear polarization behavior were observed at higher temperatures, suggesting that ferroelectricity is supressed under tensile strain conditions in contrast to compressive strain for our measurement configuration, while a similar reentrant relaxor-like behavior was found in all studied layers below 0°C.

Microstructural Design and Processing Control of Advanced Ceramics

Advanced ceramics are referred to in various parts of the world as technical ceramics, high-tech ceramics, and high-performance ceramics [...].

Large Electrocaloric Responsivity and Energy Storage Response in the Lead-Free Ba(GexTi1−x)O3 Ceramics

Ferroelectric property that induces electrocaloric effect was investigated in Ba(GexTi1−x)O3 ceramics, known as BTGx. X-ray diffraction analysis shows pure perovskite phases in tetragonal symmetry compatible with the P4mm (No. 99) space group. Dielectric permittivity exhibits first-order ferroelectric-paraelectric phase transition, confirmed by specific heat measurements, similar to that observed in BaTiO3 (BTO) crystal. Curie temperature varies weakly as a function of Ge-content. Using the direct and indirect method, we confirmed that the adiabatic temperature change ΔT reached its higher value of 0.9 K under 8 kV/cm for the composition BTG6, corresponding to an electrocaloric responsivity ΔT/ΔE of 1.13 × 10−6 K.m/V. Such electrocaloric responsivity significantly exceeds those obtained so far in other barium titanate-based lead-free electrocaloric ceramic materials. Energy storage investigations show promising results: stored energy density of ~17 mJ/cm3 and an energy efficiency of ~88% in the composition BTG5. These results classify the studied materials as candidates for cooling devices and energy storage applications.

Adjusting the Energy-Storage Characteristics of 0.95NaNbO3-0.05Bi(Mg0.5Sn0.5)O3 Ceramics by Doping Linear Perovskite Materials

Passive electronic components are an indispensable part of integrated circuits, which are key to the miniaturization and integration of electronic components. As an important branch of passive devices, the relatively low energy-storage capacity of ceramic capacitors limits their miniaturization. To solve this problem, this study adopts the strategy of doping linear materials, specifically CT, into 0.95NaNbO₃-0.05Bi(Mg_0.5Sn_0.5)O₃ (0.95NN-0.05BMS) ceramics to increase the disorder of the system through the nonequivalent substitution of A and B sites to achieve the sintering temperature and the residual polarization. Meanwhile, the breakdown electric field strength (E_b) is improved by adjusting the activation energy of the material and the relative density of the sample. Thus, an ultrahigh W_rec of 6.35 J/cm³ and a η of 80% are obtained at an E_b of 646 kV/cm. Additionally, through the analysis of the dielectric temperature spectrum, it is found that the 0.88(0.95NN-0.05BMS)-0.12CT sample can satisfy the technical standards of general ceramic Z5U and patch ceramic X6R. The performance of the ceramics also remains stable within a temperature range of 20-200 °C, a frequency range of 1-100 Hz, and 10⁴ cycles. The charge and discharge tests of the ceramics show that the t_0.9 of the sample floats between 1.02 and 1.04 μs, which illustrates its potential application in the field of pulsed power components.

The effect of composition on phonon softening in ABO3-type perovskites: DFT modelling

The influence of the A cation on the ferroelectric instability in ABO3 perovskites, and its associated F1u IR-active phonon mode, is systematically investigated for tantalates, niobates and titanates at the hybrid density-functional theory level.

Structural Phase Transition and In-Situ Energy Storage Pathway in Nonpolar Materials: A Review

Benefitting from exceptional energy storage performance, dielectric-based capacitors are playing increasingly important roles in advanced electronics and high-power electrical systems. Nevertheless, a series of unresolved structural puzzles represent obstacles to further improving the energy storage performance. Compared with ferroelectrics and linear dielectrics, antiferroelectric materials have unique advantages in unlocking these puzzles due to the inherent coupling of structural transitions with the energy storage process. In this review, we summarize the most recent studies about in-situ structural phase transitions in PbZrO₃-based and NaNbO₃-based systems. In the context of the ultrahigh energy storage density of SrTiO₃-based capacitors, we highlight the necessity of extending the concept of antiferroelectric-to-ferroelectric (AFE-to-FE) transition to broader antiferrodistortive-to-ferrodistortive (AFD-to-FD) transition for materials that are simultaneously ferroelastic. Combining discussion of the factors driving ferroelectricity, electric-field-driven metal-to-insulator transition in a (La_1−xSr_x)MnO₃ electrode is emphasized to determine the role of ionic migration in improving the storage performance. We believe that this review, aiming at depicting a clearer structure–property relationship, will be of benefit for researchers who wish to carry out cutting-edge structure and energy storage exploration.

BiFeO3-Based Relaxor Ferroelectrics for Energy Storage: Progress and Prospects

Dielectric capacitors have been widely studied because their electrostatic storage capacity is enormous, and they can deliver the stored energy in a very short time. Relaxor ferroelectrics-based dielectric capacitors have gained tremendous importance for the efficient storage of electrical energy. Relaxor ferroelectrics possess low dielectric loss, low remanent polarization, high saturation polarization, and high breakdown strength, which are the main parameters for energy storage. This article focuses on a timely review of the energy storage performance of BiFeO3-based relaxor ferroelectrics in bulk ceramics, multilayers, and thin film forms. The article begins with a general introduction to various energy storage systems and the need for dielectric capacitors as energy storage devices. This is followed by a brief discussion on the mechanism of energy storage in capacitors, ferroelectrics, anti-ferroelectrics, and relaxor ferroelectrics as potential candidates for energy storage. The remainder of this article is devoted to reviewing the energy storage performance of bulk ceramics, multilayers, and thin films of BiFeO3-based relaxor ferroelectrics, along with a discussion of strategies to address some of the issues associated with their application as energy storage systems.

Synergistic Function via Amorphous and Nanoscale Polarization Heterogeneous Regions in (1-x)BaTiO3 -xBi(Ni0.5 Zr0.5 )O3 Thin Film with Ultrahigh Energy Storage Capability and Stability

Dielectric film capacitors are considered as potential candidates for advanced power electronics technology due to their extremely high-power densities and outstanding mechanical and thermal stability, but the further improvement of energy storage density is still needed. Here, a strategy is proposed to enhance the energy storage properties by introducing nanoscale polarization regions into amorphous films, which can significantly improve the maximum polarization and maintain a high breakdown strength. The (1-x)BaTiO₃ -xBi(Ni_0.5 Zr_0.5 )O₃ ((1-x)BT-xBNZ) thin films are fabricated by the sol-gel method and the amorphous films with nanoscale polarization regions are obtained by adjusting the preparation process. Consistent with the conjecture, amorphous phase and nanoscale polarization regions in the (1-x)BT-xBNZ films are clearly observed by electron diffraction. Results show that giant recoverable energy density of 103.7 J cm^-3 with high energy efficiency of 88.3% are simultaneously achieved at 8.3 MV cm^-1 in 0.92BT-0.08BNZ thin films. Furthermore, the 0.92BT-0.08BNZ thin film exhibits excellent thermal stability in a wide temperature range of 20-200 °C, ∆W_rec /W_rec20 °C  < 2.2%. This work provides a novel method for dielectric thin film capacitors applied in high temperature and electric field.