Composite Nitride Nanoceramics in the System Titanium Nitride (TiN)-Aluminum Nitride (AlN) through High Pressure and High Temperature Sintering of Synthesis-Mixed Nanocrystalline Powders

Oxygen Aspects in the High-Pressure and High-Temperature Sintering of Semiconductor Kesterite Cu2ZnSnS4 Nanopowders Prepared by a Mechanochemically-Assisted Synthesis Method

We explore the important aspects of adventitious oxygen presence in nanopowders, as well as in the high-pressure and high-temperature-sintered nanoceramics of semiconductor kesterite Cu₂ZnSnS₄. The initial nanopowders were prepared via the mechanochemical synthesis route from two precursor systems, i.e., (i) a mixture of the constituent elements (Cu, Zn, Sn, and S), (ii) a mixture of the respective metal sulfides (Cu₂S, ZnS, and SnS), and sulfur (S). They were made in each system in the form of both the raw powder of non-semiconducting cubic zincblende-type prekesterite and, after thermal treatment at 500 °C, of semiconductor tetragonal kesterite. Upon characterization, the nanopowders were subjected to high-pressure (7.7 GPa) and high-temperature (500 °C) sintering that afforded mechanically stable black pellets. Both the nanopowders and pellets were extensively characterized, employing such determinations as powder XRD, UV-Vis/FT-IR/Raman spectroscopies, solid-state ⁶⁵Cu/¹¹⁹Sn NMR, TGA/DTA/MS, directly analyzed oxygen (O) and hydrogen (H) contents, BET specific surface area, helium density, and Vicker's hardness (when applicable). The major findings are the unexpectedly high oxygen contents in the starting nanopowders, which are further revealed in the sintered pellets as crystalline SnO₂. Additionally, the pressure-temperature-time conditions of the HP-HT sintering of the nanopowders are shown (in the relevant cases) to result in the conversion of the tetragonal kesterite into cubic zincblende polytype upon decompression.

Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1)

A study is presented on the synthesis of reaction-mixed nitride nanopowders in the reference system of aluminium nitride AlN, gallium nitride GaN, and titanium nitride TiN (Al:Ga:Ti = 1:1:1) followed by their high-pressure and high-temperature sintering towards novel multi-nitride composite nanoceramics. The synthesis starts with a 4 h reflux in hexane of the mixture of the respective metal dimethylamides, which is followed by hexane evacuation, and reactions of the residue in liquid ammonia at −33 °C to afford a mixed metal amide/imide precursor. Plausible equilibration towards a bimetallic Al/Ga-dimethylamide compound upon mixing of the solutions of the individual metal-dimethylamide precursors containing dimeric {Al[N(CH₃)₂]₃}₂ and dimeric {Ga[N(CH₃)₂]₃}₂ is confirmed by ¹H- and ¹³C{H}-NMR spectroscopy in C₆D₆ solution. The precursor is pyrolyzed under ammonia at 800 and 950 °C yielding, respectively, two different reaction-mixed composite nitride nanopowders. The latter are subjected to no-additive high-pressure and high-temperature sintering under conditions either conservative for the initial powder nanocrystallinity (650 °C, 7.7 GPa) or promoting crystal growth/recrystallization and, possibly, solid solution formation via reactions of AlN and GaN towards Al_0.5Ga_0.5N (1000 and 1100 °C, 7.7 GPa). The sintered composite pellets show moderately high mechanical hardness as determined by the Vicker’s method. The starting nanopowders and resulting nanoceramics are characterized by powder XRD, Raman spectroscopy, and SEM/EDX. It is demonstrated that, in addition to the multi-nitride composite nanoceramics of hexagonal AlN/hexagonal GaN/cubic TiN, under specific conditions the novel composite nanoceramics made of hexagonal Al_0.5Ga_0.5N and cubic TiN can be prepared.

New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN-Titanium Nitride TiN

Presented is a study on the preparation, via original precursor solution chemistry, of intimately mixed composite nanocrystalline powders in the system gallium nitride GaN–titanium nitride TiN, atomic ratio Ga/Ti = 1/1, which were subjected to high-pressure (7.7 GPa) and high-temperature (650, 1000, and 1200 °C) sintering with no additives. Potential equilibration toward bimetallic compounds upon mixing of the solutions of the metal dimethylamide precursors, dimeric {Ga[N(CH₃)₂]₃}₂ and monomeric Ti[N(CH₃)₂]₄, was studied with ¹H- and ¹³C{H}-NMR spectroscopy in C₆D₆ solution. The different nitridation temperatures of 800 and 950 °C afforded a pool of in situ synthesis-mixed composite nanopowders of hexagonal h-GaN and cubic c-TiN with varying average crystallite sizes. The applied sintering temperatures were either to prevent temperature-induced recrystallization (650 °C) or promote crystal growth (1000 and 1200 °C) of the initial powders with the high sintering pressure of 7.7 GPa having a detrimental effect on crystal growth. The powders and nanoceramics, both of the composites and of the individual nitrides, were characterized if applicable by powder XRD, SEM/EDX, Raman spectroscopy, Vicker’s hardness, and helium density. No evidence was found for metastable alloying of the two crystallographically different nitrides under the applied synthesis and sintering conditions, while the nitride domain segregation on the micrometer scale was observed on sintering. The Vicker’s hardness tests for many of the composite and individual nanoceramics provided values with high hardness comparable with those of the individual h-GaN and c-TiN ceramics.