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Havigh RS, Yıldırım F, Mahmoudi Chenari H, Türüt A, Aydoğan Ş. Self-powered stable high-performance UV-Vis-NIR broadband photodetector based on PVP-Cobalt@Carbon nanofibers/n-GaAs heterojunction. NANOTECHNOLOGY 2024; 35:335201. [PMID: 38723610 DOI: 10.1088/1361-6528/ad4973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Accepted: 05/09/2024] [Indexed: 05/29/2024]
Abstract
The self-powered PVP-Co@C nanofibers/n-GaAs heterojunction photodetector (HJPD) was fabricated by electrospinning of the nanofibers onto GaAs. An excellent rectification ratio of 6.60 × 106was obtained fromI-Vmeasurements of the device in the dark. TheI-Vmeasurements of the fabricated device under 365 nm, 395 nm and 850 nm lights, as well asI-Vmeasurements in visible light depending on the light intensity, were performed. The HJPD demonstrated excellent photodetection performance in terms of a good responsivity of ∼225 mA W-1(at -1.72 V) and at zero bias, an impressive detectivity of 6.28 × 1012Jones, and a high on/off ratio of 8.38 × 105, all at 365 nm wavelength. In addition, the maximum external quantum efficiency and NPDR values were 3495% (V = -1.72 V) and 2.60 × 1010W-1(V= 0.0 V), respectively, while the minimum NEP value was ∼10-14W.Hz-1/2for 365 nm atV= 0.V volts. The HJPD also exhibited good long-term stability in air after 30 d without any encapsulation.
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Affiliation(s)
- Roya Shokrani Havigh
- Department of Physics, Faculty of Science, University of Guilan, Namjoo Ave, PO Box 41335-1914, Rasht, Iran
| | - Fatma Yıldırım
- Department of Physics, Science Faculty, Atatürk University, 25240 Erzurum, Turkey
| | - Hossein Mahmoudi Chenari
- Department of Physics, Faculty of Science, University of Guilan, Namjoo Ave, PO Box 41335-1914, Rasht, Iran
| | | | - Şakir Aydoğan
- Department of Physics, Science Faculty, Atatürk University, 25240 Erzurum, Turkey
- Advanced Materials Research Laboratory, Department of Nanoscience and Nanoengineering, Graduate School of Natural and Applied Sciences, Ataturk University, 25240 Erzurum, Turkey
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Xie C, Yang Y, Li K, Cao X, Chen S, Zhao Y. A Broadband Photodetector Based on Non-Layered MnS/WSe 2 Type-I Heterojunctions with Ultrahigh Photoresponsivity and Fast Photoresponse. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1590. [PMID: 38612104 PMCID: PMC11012445 DOI: 10.3390/ma17071590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 03/27/2024] [Accepted: 03/28/2024] [Indexed: 04/14/2024]
Abstract
The separation of photogenerated electron-hole pairs is crucial for the construction of high-performance and wide-band responsive photodetectors. The type-I heterojunction as a photodetector is seldomly studied due to its limited separation of the carriers and narrow optical response. In this work, we demonstrated that the high performance of type-I heterojunction as a broadband photodetector can be obtained by rational design of the band alignment and proper modulation from external electric field. The heterojunction device is fabricated by vertical stacking of non-layered MnS and WSe2 flakes. Its type-I band structure is confirmed by the first-principles calculations. The MnS/WSe2 heterojunction presents a wide optical detecting range spanning from 365 nm to 1550 nm. It exhibits the characteristics of bidirectional transportation, a current on/off ratio over 103, and an excellent photoresponsivity of 108 A W-1 in the visible range. Furthermore, the response time of the device is 19 ms (rise time) and 10 ms (fall time), which is much faster than that of its constituents MnS and WSe2. The facilitation of carrier accumulation caused by the interfacial band bending is thought to be critical to the photoresponse performance of the heterojunction. In addition, the device can operate in self-powered mode, indicating a photovoltaic effect.
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Affiliation(s)
| | | | | | | | - Shanshan Chen
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China; (C.X.); (Y.Y.); (K.L.); (X.C.)
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China; (C.X.); (Y.Y.); (K.L.); (X.C.)
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Gou R, Shi C, Zhou S, Huang Z, Ouyang Z, He S, Zhao J, Xiao Y, Lei S, Cheng B. Self-Powered Photodetector Based on Ag/CH 3NH 3PbI 3/C Asymmetric Dual-Terminal Device. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54863-54874. [PMID: 37966314 DOI: 10.1021/acsami.3c13839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
CH3NH3PbI3 is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through p-n junctions. In this study, we fabricated a Ag/CH3NH3PbI3/C dual-terminal asymmetric electrode device using a single CH3NH3PbI3 perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CH3NH3PbI3 to visible light. Compared with traditional p-n junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CH3NH3PbI3, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 103, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
- School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Cencen Shi
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
| | - Shuanfu Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Zhikang Huang
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
- School of Materials and Energy, Jiangxi Science and Technology Normal University, Nanchang 330038, P. R. China
| | - Song He
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Yanhe Xiao
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Shuijin Lei
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
| | - Baochang Cheng
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, P. R. China
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China
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Zhu X, He J, Liu W, Zheng Y, Sheng C, Luo Y, Li S, Zhang R, Chu J. Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS 2 Schottky Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:2468-2478. [PMID: 36583673 DOI: 10.1021/acsami.2c20100] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Stacking two dimensional tunneling heterostructures has always been an important strategy to improve the optoelectronic device performance. However, there are still many disputes about the blocking ability of monolayer (1L-) h-BN on the interlayer coupling. Graphene/h-BN/MoS2 optoelectronic devices have been reported for superior device results. In this study, starting with graphene/h-BN/MoS2 heterostructures, we report experimental evidence of 1L-h-BN barrier layer modulation effects about the electronic band structures and exciton properties. We find that 1L-h-BN insertion only partially blocks the interlayer carrier transfer. In the meantime, the 1L-h-BN barrier layer weakens the interlayer coupling effect, by decreasing the efficient dielectric screening and releasing the quantum confinement. Consequently, the optical conductivity and plasmon excitation slightly improve, and the electronic band structures remain unchanged in graphene/h-BN/MoS2, explaining their fascinating optoelectronic responses. Moreover, the excitonic binding energies of graphene/h-BN/MoS2 redshift with respect to the graphene/MoS2 counterparts. Our results, as well as the broadband optical constants, will help better understand the h-BN barrier layers, facilitating the developing progress of h-BN-based tunneling optoelectronic devices.
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Affiliation(s)
- Xudan Zhu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan University, Shanghai200433, China
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun130033, China
| | - Junbo He
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
| | - Weiming Liu
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
| | - Yuxiang Zheng
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
| | - Chuanxiang Sheng
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
| | - Yi Luo
- Microsystem and Terahertz Research Center, Chengdu610200, China
| | - Shaojuan Li
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun130033, China
| | - Rongjun Zhang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan University, Shanghai200433, China
- School of Information Science and Engineering, Fudan University, Shanghai200433, China
- Academy for Engineering & Technology, Fudan University, Shanghai200433, China
| | - Junhao Chu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan University, Shanghai200433, China
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Lin X, Deng H, Jia Y, Wu Z, Xia Y, Wang X, Chen S, Cheng Y, Zheng Q, Lai Y, Cheng S. Self-Powered Sb 2S 3 Thin-Film Photodetectors with High Detectivity for Weak Light Signal Detection. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12385-12394. [PMID: 35234027 DOI: 10.1021/acsami.1c25256] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Photodetectors (PDs) for weak light signal detection have wide applications for optical communication and imaging. Antimony sulfide (Sb2S3) as a nontoxic and stable light-sensitive material becomes a promising candidate for weak light PDs, which are developing in the direction of high response, high speed, and low cost. Herein, a self-powered Sb2S3 PD with the structure of FTO/TiO2/Sb2S3/Au is developed to achieve weak light detection for 300-750 nm visible light. We control the Sb2S3 thickness with about 460 nm to match depletion region width (438 nm) and obtain an excellent photoresponsivity and 3 dB bandwidth. Furtherly, we prepare pyramid structure polydimethylsiloxane (PDMS) on the illuminating surface to enhance the performance of weak light detection by light-trapping effects. The photocurrent of Sb2S3 PD with 20 μm-sized PDMS texture achieves 13.6% improvement compared with the control one. Under weak 530 nm light illumination of 1 μW cm-2, the self-powered Sb2S3 PD with PDMS achieves high responsivity (3.41 A W-1), large detectivity (2.84 × 1013 Jones), and ultrafast speed (15 μs). The present Sb2S3 PD and light-trapping strategy are expected to provide an alternative to future commercial weak light detection applications.
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Affiliation(s)
- Xiao Lin
- College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
| | - Hui Deng
- College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Yi Jia
- College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
| | - Zhixu Wu
- School of Information Engineering, Institute of Space Science and Technology, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Yong Xia
- School of Information Engineering, Institute of Space Science and Technology, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Xingjian Wang
- School of Information Engineering, Institute of Space Science and Technology, Nanchang University, Nanchang, Jiangxi 330031, P. R. China
| | - Siwei Chen
- College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
| | - Yingshun Cheng
- College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
| | - Qiao Zheng
- College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Yunfeng Lai
- College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Shuying Cheng
- College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, Fujian 350108, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou 213164, P. R. China
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Zhang Y, Qin Z, Huo X, Song D, Qiao B, Zhao S. High-Performance Near-Infrared Photodetectors Based on the Synergy Effect of Short Wavelength Light Filter and Long Wavelength Response of a Perovskite/Polymer Hybrid Structure. ACS APPLIED MATERIALS & INTERFACES 2021; 13:61818-61826. [PMID: 34919371 DOI: 10.1021/acsami.1c20742] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Near-infrared photodetectors (NIR-PDs) are widely used in communications, biomedical imaging, and national defense. Here we report a new strategy to prepare a short wavelength light filter based NIR-PDs by introducing an interface layer between the perovskite layer and the polymer layer to achieve the selective passage of carriers. Through the synergistic effect of the perovskite and the interface layer, the short wavelength light component in the signal spectrum is effectively filtered out. The organic polymer layer with a bulk heterojunction structure is applied to realize the absorption and conversion of near-infrared light. The prepared device achieves a maximum external quantum efficiency of 83.7% without bias, a high specific detectivity of 1.52 × 1013 Jones, an NIR responsivity of 0.577A/W, and a short response time of 1.73/0.97 μs within the detection range from 770 to 900 nm. All these properties show great advantages compared with other perovskite/polymer hybrid NIR photodetectors that have been reported. This innovative strategy provides a new way to prepare high-performance near-infrared photodetectors.
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Affiliation(s)
- Yu Zhang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Zilun Qin
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xiaomin Huo
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Dandan Song
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Bo Qiao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Suling Zhao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
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