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Boonlakhorn J, Suksangrat P, Sarakorn W, Krongsuk S, Thongbai P, Srepusharawoot P. Computational and experimental investigations of the giant dielectric property of Na 1/2Y 1/2Cu 3Ti 4O 12 ceramics. Sci Rep 2023; 13:4638. [PMID: 36944818 PMCID: PMC10030594 DOI: 10.1038/s41598-023-31879-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Accepted: 03/20/2023] [Indexed: 03/23/2023] Open
Abstract
A modified sol-gel method was used to successfully produce Na1/2Y1/2Cu3Ti4O12 ceramics with high dielectric permittivity. The dielectric permittivity of Na1/2Y1/2Cu3Ti4O12 ceramics reaches values larger than 104 at room temperature and 1 kHz. Moreover, these ceramics exhibit two distinct thermally induced dielectric relaxations over a broad temperature range. The loss tangent is indeed small, ~0.032-0.035. At low temperatures, dielectric relaxation was attributed to the oxygen vacancy effect, while at high temperatures, it was attributed to grain boundary and sample-electrode contact effects. Our calculations revealed that Y and Na ions are likely to occupy Ca and Cu sites, respectively. As a result, other Cu related phases, especially CuO, were observed at the grain boundaries. Based on our analysis, there is a charge compensation between Na and Y ions in Na1/2Y1/2Cu3Ti4O12. Additionally, the Cu+ and Ti3+ states observed in our XPS study originate from the presence of an oxygen vacancy in the lattice. Last, the primary cause of the enormous dielectric permittivity of Na1/2Y1/2Cu3Ti4O12 ceramics primarily comes from the internal barrier layer capacitor effect.
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Affiliation(s)
- Jakkree Boonlakhorn
- Department of Basic Science and Mathematics, Faculty of Science, Thaksin University, Songkhla Campus, Songkhla, 90000, Thailand
| | - Punpatsorn Suksangrat
- Giant Dielectric and Computational Design Research Group (GD-CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand
| | - Weerachai Sarakorn
- Department of Mathematics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand
| | - Sriprajak Krongsuk
- Giant Dielectric and Computational Design Research Group (GD-CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand
- Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Khon Kaen University, Khon Kaen, 40002, Thailand
| | - Prasit Thongbai
- Giant Dielectric and Computational Design Research Group (GD-CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand
- Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Khon Kaen University, Khon Kaen, 40002, Thailand
| | - Pornjuk Srepusharawoot
- Giant Dielectric and Computational Design Research Group (GD-CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, 40002, Thailand.
- Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Khon Kaen University, Khon Kaen, 40002, Thailand.
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Effects of Sintering Conditions on Giant Dielectric and Nonlinear Current-Voltage Properties of TiO 2-Excessive Na 1/2Y 1/2Cu 3Ti 4.1O 12 Ceramics. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27165311. [PMID: 36014551 PMCID: PMC9415656 DOI: 10.3390/molecules27165311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/11/2022] [Accepted: 08/19/2022] [Indexed: 11/17/2022]
Abstract
The effects of the sintering conditions on the phase compositions, microstructure, electrical properties, and dielectric responses of TiO2-excessive Na1/2Y1/2Cu3Ti4.1O12 ceramics prepared by a solid-state reaction method were investigated. A pure phase of the Na1/2Y1/2Cu3Ti4.1O12 ceramic was achieved in all sintered ceramics. The mean grain size slightly increased with increasing sintering time (from 1 to 15 h after sintering at 1070 °C) and sintering temperature from 1070 to 1090 °C for 5 h. The primary elements were dispersed in the microstructure. Low dielectric loss tangents (tan δ~0.018–0.022) were obtained. Moreover, the dielectric constant increased from ε′~5396 to 25,565 upon changing the sintering conditions. The lowest tan δ of 0.009 at 1 kHz was obtained. The electrical responses of the semiconducting grain and insulating grain boundary were studied using impedance and admittance spectroscopies. The breakdown voltage and nonlinear coefficient decreased significantly as the sintering temperature and time increased. The presence of Cu+, Cu3+, and Ti3+ was examined using X-ray photoelectron spectroscopy, confirming the formation of semiconducting grains. The dielectric and electrical properties were described using Maxwell–Wagner relaxation, based on the internal barrier layer capacitor model.
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Gao H, Zhang K, Abudurusuli A, Bai C, Yang Z, Lai K, Li J, Pan S. Syntheses, Structures and Properties of Alkali and Alkaline Earth Metal Diamond-Like Compounds Li 2MgMSe 4 (M = Ge, Sn). MATERIALS (BASEL, SWITZERLAND) 2021; 14:6166. [PMID: 34683761 PMCID: PMC8537313 DOI: 10.3390/ma14206166] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/04/2021] [Accepted: 10/05/2021] [Indexed: 02/03/2023]
Abstract
Two new diamond-like (DL) chalcogenides, Li2MgGeSe4 and Li2MgSnSe4, have been successfully synthesized using a conventional high-temperature solid-state method. The two compounds crystallize in the non-centrosymmetric space group Pmn21 with a = 8.402 (14) Å, b = 7.181 (12) Å, c = 6.728 (11) Å, Z = 2 for Li2MgSnSe4, and a = 8.2961 (7) Å, b = 7.0069 (5) Å, c = 6.6116 (6) Å, Z = 2 for Li2MgGeSe4. The calculated results show that the second harmonic generation (SHG) coefficients of Li2MgSnSe4 (d33 = 12.19 pm/v) and Li2MgGeSe4 (d33 = -14.77 pm/v), mainly deriving from the [MSe4] (M = Ge, Sn) tetrahedral units, are close to the one in the benchmark AgGaS2 (d14 = 13.7 pm/V). The calculated band gaps for Li2MgSnSe4 and Li2MgGeSe4 are 2.42 and 2.44 eV, respectively. Moreover, the two compounds are the first series of alkali and alkaline-earth metal DL compounds in the I2-II-IV-VI4 family, enriching the structural diversity of DL compounds.
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Affiliation(s)
- Hongbo Gao
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China; (H.G.); (K.Z.); (A.A.); (C.B.); (Z.Y.)
- Department of Physics, Changji University, Changji 831100, China;
| | - Kewang Zhang
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China; (H.G.); (K.Z.); (A.A.); (C.B.); (Z.Y.)
- College of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
| | - Ailijiang Abudurusuli
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China; (H.G.); (K.Z.); (A.A.); (C.B.); (Z.Y.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Bai
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China; (H.G.); (K.Z.); (A.A.); (C.B.); (Z.Y.)
| | - Zhihua Yang
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China; (H.G.); (K.Z.); (A.A.); (C.B.); (Z.Y.)
| | - Kangrong Lai
- Department of Physics, Changji University, Changji 831100, China;
| | - Junjie Li
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China; (H.G.); (K.Z.); (A.A.); (C.B.); (Z.Y.)
| | - Shilie Pan
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, China; (H.G.); (K.Z.); (A.A.); (C.B.); (Z.Y.)
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