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For: Yang Z, Zou Z, Zhang Z, Xing Y, Wang T. Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing. Materials (Basel) 2021;14:5107. [PMID: 34501194 DOI: 10.3390/ma14175107] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Revised: 09/02/2021] [Accepted: 09/04/2021] [Indexed: 11/24/2022]
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