1
|
Meng Q, Lin Q, Wang Z, Wang Y, Jing W, Xian D, Zhao N, Yao K, Zhang F, Tian B, Jiang Z. Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:632. [PMID: 36838999 PMCID: PMC9961425 DOI: 10.3390/nano13040632] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Revised: 01/31/2023] [Accepted: 02/03/2023] [Indexed: 06/18/2023]
Abstract
GaN high-electron-mobility transistor (HEMT) terahertz (THz) detectors have been widely studied and applied in the past few decades. However, there are few reports about the influence of GaN/AlGaN heterostructure material properties on the detection model at present. In this paper, a response voltage model for a GaN HEMT THz detector that considers the carrier scattering in a GaN/AlGaN heterostructure is proposed. The phonon scattering, dislocation scattering, and interface roughness scattering mechanisms are taken into account in the classic THz response voltage model; furthermore, the influence of various material parameters on the response voltage is studied. In a low-temperature region, acoustic scattering plays an important role, and the response voltage drops with an increase in temperature. In a high temperature range, optical phonon scattering is the main scattering mechanism, and the detector operates in a non-resonant detection mode. With an increase in carrier surface density, the response voltage decreases and then increases due to piezoelectric scattering and optical phonon scattering. For dislocation and interface roughness scattering, the response voltage is inversely proportional to the dislocation density and root mean square roughness (RMS) but is positively related to lateral correlation length. Finally, a comparison between our model and the reported models shows that our proposed model is more accurate.
Collapse
Affiliation(s)
- Qingzhi Meng
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Qijing Lin
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
- Collaborative Innovation Center of High-End State Key Manufacturing Equipment, Xi’an Jiaotong University, Xi’an 710054, China
- Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China
- Xi’an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi’an Jiaotong University, Xi’an 710049, China
| | - Zelin Wang
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Yangtao Wang
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Weixuan Jing
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Dan Xian
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Na Zhao
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Kun Yao
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Fuzheng Zhang
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Bian Tian
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
- Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265503, China
- Xi’an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi’an Jiaotong University, Xi’an 710049, China
| | - Zhuangde Jiang
- State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| |
Collapse
|
2
|
Yu P, Zhu X, Bai J, Zhang H, Ji W. Calibrating the Hole Mobility Measurements Implemented by Transient Electroluminescence Technology. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52253-52261. [PMID: 36346779 DOI: 10.1021/acsami.2c14507] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
To date, measuring the carrier mobility in semiconductor films, especially for the amorphous organic small-molecule films, is still a big challenge. Here, we demonstrate that transient electroluminescence (TrEL) spectroscopy with quantum-dot light-emitting diodes as the platform is a feasible and reliable method to evaluate the carrier mobility of such amorphous films. The position of the exciton formation zone is precisely determined and controlled by employing a quantum dot monolayer as the emissive layer. The electrical field intensity across the organic layer is evaluated through the charge density at the electrode calculated by the transient current. Then, the charge carrier mobility is obtained by combining the electroluminescence (EL) delay time and the thickness of the organic layer. Additionally, we demonstrate that the large roughness of the organic layer leads to serious charge accumulation and, hence, a high localized electrical field, which provides preferred charge injection paths, reducing the EL delay time and underestimating the EL delay time. Therefore, a thick organic film is the prerequisite for a reliable measurement of charge carrier mobility, which can circumvent the negative effect of film roughness.
Collapse
Affiliation(s)
- Panlong Yu
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin130023, People's Republic of China
| | - Xiaoxiang Zhu
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin130023, People's Republic of China
| | - Jialin Bai
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin130023, People's Republic of China
| | - Hanzhuang Zhang
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin130023, People's Republic of China
| | - Wenyu Ji
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, Jilin130023, People's Republic of China
| |
Collapse
|
3
|
Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer. MICROMACHINES 2022; 13:mi13050791. [PMID: 35630258 PMCID: PMC9147089 DOI: 10.3390/mi13050791] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/03/2022] [Revised: 05/14/2022] [Accepted: 05/16/2022] [Indexed: 02/05/2023]
Abstract
A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics.
Collapse
|