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For: Ke W, Yang X, Liu T. Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri₂ Perovskite. Materials (Basel) 2021;14:ma14216629. [PMID: 34772157 PMCID: PMC8585410 DOI: 10.3390/ma14216629] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/28/2021] [Revised: 10/23/2021] [Accepted: 10/28/2021] [Indexed: 02/07/2023]

For:	Ke W, Yang X, Liu T. Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri₂ Perovskite. Materials (Basel) 2021;14:ma14216629. [PMID: 34772157 PMCID: PMC8585410 DOI: 10.3390/ma14216629] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/28/2021] [Revised: 10/23/2021] [Accepted: 10/28/2021] [Indexed: 02/07/2023]

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(The first 100,000 artilces are displayed in RCA.)