Synthesis and Properties Comparison of Low Dielectric Silicon Containing Polyimides

Crown Ether Copolymerized Polyimide Film: Enhanced Mechanical, Thermal Properties and Low Dielectric Constant under High Frequency

Polymer materials with a low dielectric constant and low dielectric loss have the potential to be applied to high-frequency signal transmissions, such as mobile phone antennas and millimeter wave radars. Two types of diamines, 4,4'-diamino-p-tetraphenyl (DPT) and crown ether diamine (CED), were prepared for ternary copolymerization with BPDA in this study. Cross-links with molecular chains were formed, increasing molecular chain distance by utilizing rings of CED. The MPI films exhibit a good thermal performance with the increase in CED addition, with Tg > 380 °C and CTE from -4 × 10-6 K-1 to 5 × 10-6 K-1. The Young's modulus can reach 8.6 GPa, and the tensile strength is above 200 MPa when 5% and 7% CED are introduced. These MPI films exhibit good mechanical performances. The dielectric constant of PI-10% film can go as low as 3.17. Meanwhile, the relationship between dielectric properties and molecular structure has been demonstrated by Molecular Simulation (MS). PI molecules are separated by low dielectric groups, resulting in a decrease in the dielectric constant.

Synthesis and Characterization of Polyimides with Naphthalene Ring Structure Introduced in the Main Chain

In this paper, a new aromatic diamine monomer 4,4'-(2,6-naphthalenediyl)bis[benzenamine]) (NADA) was synthesized and a series of modified PI films containing naphthalene ring structure obtained by controlling the molar ratio of NADA monomer, ternary polymerization with 4,4'-oxydianiline (ODA), and pyromellitic dianhydride (PMDA). The effects of the introduction of the naphthalene ring on the free volume and various properties of PI were investigated by molecular dynamic simulations. The results show that the comprehensive properties of the modified films are all improved to some extent, with 5% thermal weight loss temperature (T_d5%) of 569 °C, glass transition temperature (Tg) of 381 °C, tensile strength of 96.41 MPa, and modulus of elasticity of 2.45 GPa. Dielectric property test results show that the dielectric constant (Dk) of the film at 1 MHz is reduced from 3.21 to 2.82 and dielectric loss (Df) reduced from 0.0091 to 0.0065. It is noteworthy that the PI-1 dielectric constant is reduced from 3.26 to 3.01 at 10 GHz with only 5% NADA doping, which is expected to yield the best ratio and provide the possibility of industrial production.