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Zhang Y, Feng S, Guo J, Tao R, Liu Z, He X, Wang G, Wang Y. WS 2 with Controllable Layer Number Grown Directly on W Film. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1356. [PMID: 39195394 DOI: 10.3390/nano14161356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2024] [Revised: 08/13/2024] [Accepted: 08/14/2024] [Indexed: 08/29/2024]
Abstract
As a layered material with single/multi-atom thickness, two-dimensional transition metal sulfide WS2 has attracted extensive attention in the field of science for its excellent physical, chemical, optical, and electrical properties. The photoelectric properties of WS2 are even more promising than graphene. However, there are many existing preparation methods for WS2, but few reports on its direct growth on tungsten films. Therefore, this paper studies its preparation method and proposes an innovative two-dimensional material preparation method to grow large-sized WS2 with higher quality on metal film. In this experiment, it was found that the reaction temperature could regulate the growth direction of WS2. When the temperature was below 950 °C, the film showed horizontal growth, while when the temperature was above 1000 °C, the film showed vertical growth. At the same time, through Raman and band gap measurements, it is found that the different thicknesses of precursor film will lead to a difference in the number of layers of WS2. The number of layers of WS2 can be controlled by adjusting the thickness of the precursor.
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Affiliation(s)
- Yuxin Zhang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shiyi Feng
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Jin Guo
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Rong Tao
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Zhixuan Liu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Xiangyi He
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Guoxia Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Yue Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
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Cheng Z, Zhang J, Lin L, Zhan Z, Ma Y, Li J, Yu S, Cui H. Pressure-Induced Modulation of Tin Selenide Properties: A Review. Molecules 2023; 28:7971. [PMID: 38138462 PMCID: PMC10745316 DOI: 10.3390/molecules28247971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Revised: 11/22/2023] [Accepted: 11/30/2023] [Indexed: 12/24/2023] Open
Abstract
Tin selenide (SnSe) holds great potential for abundant future applications, due to its exceptional properties and distinctive layered structure, which can be modified using a variety of techniques. One of the many tuning techniques is pressure manipulating using the diamond anvil cell (DAC), which is a very efficient in situ and reversible approach for modulating the structure and physical properties of SnSe. We briefly summarize the advantages and challenges of experimental study using DAC in this review, then introduce the recent progress and achievements of the pressure-induced structure and performance of SnSe, especially including the influence of pressure on its crystal structure and optical, electronic, and thermoelectric properties. The overall goal of the review is to better understand the mechanics underlying pressure-induced phase transitions and to offer suggestions for properly designing a structural pattern to achieve or enhanced novel properties.
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Affiliation(s)
- Ziwei Cheng
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Jian Zhang
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Lin Lin
- School of Agricultural Engineering and Food Science, Shandong University of Technology, Zibo 255000, China;
- Key Laboratory of Wooden Materials Science and Engineering of Jilin Province, Beihua University, Jilin 132013, China
| | - Zhiwen Zhan
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Yibo Ma
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Jia Li
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Shenglong Yu
- College of Sciences, Beihua University, Jilin 132013, China; (Z.C.); (Z.Z.); (Y.M.); (J.L.); (S.Y.)
| | - Hang Cui
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
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Niu Y, Li L, Qi Z, Aung HH, Han X, Tenne R, Yao Y, Zak A, Guo Y. 0D van der Waals interfacial ferroelectricity. Nat Commun 2023; 14:5578. [PMID: 37907466 PMCID: PMC10618478 DOI: 10.1038/s41467-023-41045-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/21/2023] [Indexed: 11/02/2023] Open
Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
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Affiliation(s)
- Yue Niu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhiying Qi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Hein Htet Aung
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Xinyi Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Reshef Tenne
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Alla Zak
- Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, 5810201, Holon, Israel
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
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Meng L, Vu TV, Criscenti LJ, Ho TA, Qin Y, Fan H. Theoretical and Experimental Advances in High-Pressure Behaviors of Nanoparticles. Chem Rev 2023; 123:10206-10257. [PMID: 37523660 DOI: 10.1021/acs.chemrev.3c00169] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/02/2023]
Abstract
Using compressive mechanical forces, such as pressure, to induce crystallographic phase transitions and mesostructural changes while modulating material properties in nanoparticles (NPs) is a unique way to discover new phase behaviors, create novel nanostructures, and study emerging properties that are difficult to achieve under conventional conditions. In recent decades, NPs of a plethora of chemical compositions, sizes, shapes, surface ligands, and self-assembled mesostructures have been studied under pressure by in-situ scattering and/or spectroscopy techniques. As a result, the fundamental knowledge of pressure-structure-property relationships has been significantly improved, leading to a better understanding of the design guidelines for nanomaterial synthesis. In the present review, we discuss experimental progress in NP high-pressure research conducted primarily over roughly the past four years on semiconductor NPs, metal and metal oxide NPs, and perovskite NPs. We focus on the pressure-induced behaviors of NPs at both the atomic- and mesoscales, inorganic NP property changes upon compression, and the structural and property transitions of perovskite NPs under pressure. We further discuss in depth progress on molecular modeling, including simulations of ligand behavior, phase-change chalcogenides, layered transition metal dichalcogenides, boron nitride, and inorganic and hybrid organic-inorganic perovskites NPs. These models now provide both mechanistic explanations of experimental observations and predictive guidelines for future experimental design. We conclude with a summary and our insights on future directions for exploration of nanomaterial phase transition, coupling, growth, and nanoelectronic and photonic properties.
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Affiliation(s)
- Lingyao Meng
- Department of Chemistry & Chemical Biology, University of New Mexico, Albuquerque, New Mexico 87106, United States
| | - Tuan V Vu
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Louise J Criscenti
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Tuan A Ho
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Yang Qin
- Department of Chemical & Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Mansfield, Connecticut 06269, United States
| | - Hongyou Fan
- Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
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Liu F, Zhou H, Gu Y, Dong Z, Yang Y, Wang Z, Zhang T, Wu W. Solution Processed Photodetectors with PVK-WS 2 Nanotube/Nanofullerene Organic-Inorganic Hybrid Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:43612-43620. [PMID: 36099066 DOI: 10.1021/acsami.2c10745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic hybrid photodetectors have attracted increased interest due to their exceptional properties, such as flexibility, transparency, and low cost for many promising applications. Low-dimensional tungsten disulfide (WS2) nanostructures have outstanding electrical and optical properties, making them ideal candidates for ultrasensitive photodetector devices. In this paper, photodetectors were fabricated with hybrid thin films containing two different WS2 nanomaterials, one-dimensional (1D) WS2 nanotubes (WS2-NTs) and a zero-dimensional (0D) WS2 nanofullerene (WS2-FLs) hybrid with poly(N-vinyl carbazole) (PVK). The electrical responses of the devices under visible-light illuminations were studied. The photodetector devices with 0D WS2-FLs/PVK hybrid thin films have relatively higher sensitivity and stable voltage responses to visible light. Besides, the hybrid film shows a strong surface-enhanced Raman effect (SERS). These materials and new strategies enable the creation of a new class of processed photodetectors for practical applications.
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Affiliation(s)
- Fenghua Liu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
| | - Huanli Zhou
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People's Republic of China
| | - Yunjiao Gu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
| | - Zhenbiao Dong
- School of Mechanical Engineering, Shanghai Institute of Technology, Shanghai, 201418, People's Republic of China
| | - Yi Yang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People's Republic of China
| | - Zan Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, People's Republic of China
| | - Weiping Wu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
- Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, People's Republic of China
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