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Yan X, Sun M, Ji J, He Z, Zhang J, Sun W. Epitaxy of (11-22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy. MATERIALS (BASEL, SWITZERLAND) 2024; 17:327. [PMID: 38255495 PMCID: PMC10817662 DOI: 10.3390/ma17020327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Revised: 01/05/2024] [Accepted: 01/05/2024] [Indexed: 01/24/2024]
Abstract
AlN epilayers were grown on magnetron-sputtered (MS) (11-22) AlN buffers on m-plane sapphire substrates at 1450 °C via hydride vapour phase epitaxy (HVPE). The MS buffers were annealed at high temperatures of 1400-1600 °C. All the samples were characterised using X-ray diffraction, atomic force microscopy, scanning electron microscope and Raman spectrometry. The crystal quality of epilayers regrown by HVPE was improved significantly compared to that of the MS counterpart. With an increasing annealing temperature, the crystal quality of both MS buffers and AlN epilayers measured along [11-23] and [1-100] improved first and then decreased, maybe due to the decomposition of MS buffers, while the corresponding anisotropy along the two directions decreased first and then increased. The optimum quality of the AlN epilayer was obtained at the annealing temperature of around 1500 °C. In addition, it was found that the anisotropy for the epilayers decreased significantly compared to that of annealed MS buffers when the annealing temperature was below 1500 °C.
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Affiliation(s)
- Xuejun Yan
- Research Center for Optoelectronics Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (X.Y.); (M.S.); (J.J.); (Z.H.)
| | - Maosong Sun
- Research Center for Optoelectronics Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (X.Y.); (M.S.); (J.J.); (Z.H.)
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Jianli Ji
- Research Center for Optoelectronics Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (X.Y.); (M.S.); (J.J.); (Z.H.)
| | - Zhuokun He
- Research Center for Optoelectronics Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (X.Y.); (M.S.); (J.J.); (Z.H.)
| | - Jicai Zhang
- Research Center for Optoelectronics Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (X.Y.); (M.S.); (J.J.); (Z.H.)
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Wenhong Sun
- Research Center for Optoelectronics Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (X.Y.); (M.S.); (J.J.); (Z.H.)
- State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Nanning 530004, China
- Guangxi Key Laboratory of Processing for Nonferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
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Komlenok M, Pivovarov P, Popovich A, Cheverikin V, Romshin A, Rybin M, Obraztsova E. Crystallization of Copper Films on Sapphire Substrate for Large-Area Single-Crystal Graphene Growth. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101694. [PMID: 37242110 DOI: 10.3390/nano13101694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 05/12/2023] [Accepted: 05/15/2023] [Indexed: 05/28/2023]
Abstract
Chemical vapor deposition synthesis of graphene on polycrystalline copper substrates from methane is a promising technique for industrial production and application. However, the quality of grown graphene can be improved by using single-crystal copper (111). In this paper, we propose to synthesize graphene on epitaxial single-crystal Cu film deposited and recrystallized on a basal-plane sapphire substrate. The effect of film thickness, temperature, and time of annealing on the size of copper grains and their orientation is demonstrated. Under optimized conditions, the copper grains with the (111) orientation and a record size of several millimeters are obtained, and the single-crystal graphene is grown over their entire area. The high quality of synthesized graphene has been confirmed by Raman spectroscopy, scanning electron microscopy, and the sheet resistance measurements by the four point probe method.
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Affiliation(s)
- Maxim Komlenok
- Prokhorov General Physics Institute of the Russian Academy of Sciences, St. Vavilova 38, Moscow 119991, Russia
| | - Pavel Pivovarov
- Prokhorov General Physics Institute of the Russian Academy of Sciences, St. Vavilova 38, Moscow 119991, Russia
| | - Alexey Popovich
- Prokhorov General Physics Institute of the Russian Academy of Sciences, St. Vavilova 38, Moscow 119991, Russia
| | - Vladimir Cheverikin
- Department of Physical Metallurgy of Non-Ferrous Metals, National University of Science and Technology "MISiS", Leninskiy Avenue 4, Moscow 119049, Russia
| | - Alexey Romshin
- Prokhorov General Physics Institute of the Russian Academy of Sciences, St. Vavilova 38, Moscow 119991, Russia
| | - Maxim Rybin
- Prokhorov General Physics Institute of the Russian Academy of Sciences, St. Vavilova 38, Moscow 119991, Russia
| | - Elena Obraztsova
- Prokhorov General Physics Institute of the Russian Academy of Sciences, St. Vavilova 38, Moscow 119991, Russia
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