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Capan I. Wide-Bandgap Semiconductors for Radiation Detection: A Review. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1147. [PMID: 38473617 DOI: 10.3390/ma17051147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Revised: 02/26/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.
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Affiliation(s)
- Ivana Capan
- Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia
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Girolami M, Bosi M, Pettinato S, Ferrari C, Lolli R, Seravalli L, Serpente V, Mastellone M, Trucchi DM, Fornari R. Structural and Photoelectronic Properties of κ-Ga 2O 3 Thin Films Grown on Polycrystalline Diamond Substrates. MATERIALS (BASEL, SWITZERLAND) 2024; 17:519. [PMID: 38276458 PMCID: PMC10820879 DOI: 10.3390/ma17020519] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 01/10/2024] [Accepted: 01/20/2024] [Indexed: 01/27/2024]
Abstract
Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-Ga2O3 epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This paves the way for the future development of novel hybrid architectures for UV and ionizing radiation detection, exploiting the unique features of gallium oxide and diamond as wide-bandgap semiconductors.
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Affiliation(s)
- Marco Girolami
- Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche (ISM–CNR), Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010 Roma, Italy; (S.P.); (V.S.); (D.M.T.)
| | - Matteo Bosi
- Istituto dei Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche (IMEM–CNR), Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (C.F.); (R.L.); (L.S.); (R.F.)
| | - Sara Pettinato
- Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche (ISM–CNR), Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010 Roma, Italy; (S.P.); (V.S.); (D.M.T.)
- Faculty of Engineering, Università degli Studi Niccolò Cusano, Via Don Carlo Gnocchi 3, 00166 Roma, Italy
| | - Claudio Ferrari
- Istituto dei Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche (IMEM–CNR), Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (C.F.); (R.L.); (L.S.); (R.F.)
| | - Riccardo Lolli
- Istituto dei Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche (IMEM–CNR), Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (C.F.); (R.L.); (L.S.); (R.F.)
- Department of Physics and Earth Science, Università di Ferrara, Via Saragat 1, 44122 Ferrara, Italy
| | - Luca Seravalli
- Istituto dei Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche (IMEM–CNR), Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (C.F.); (R.L.); (L.S.); (R.F.)
| | - Valerio Serpente
- Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche (ISM–CNR), Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010 Roma, Italy; (S.P.); (V.S.); (D.M.T.)
| | - Matteo Mastellone
- Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche (ISM–CNR), Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010 Roma, Italy; (S.P.); (V.S.); (D.M.T.)
| | - Daniele M. Trucchi
- Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche (ISM–CNR), Sede Secondaria di Montelibretti, DiaTHEMA Lab, Strada Provinciale 35D, 9, 00010 Roma, Italy; (S.P.); (V.S.); (D.M.T.)
| | - Roberto Fornari
- Istituto dei Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche (IMEM–CNR), Parco Area delle Scienze 37/A, 43124 Parma, Italy; (M.B.); (C.F.); (R.L.); (L.S.); (R.F.)
- Department of Mathematical, Physical and Computer Sciences, Università di Parma, Parco Area delle Scienze 7/A, 43124 Parma, Italy
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