Lu₂O₃:Pr,Hf Storage Phosphor: Compositional and Technological Issues

Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf─From Ab Initio Multiconfigurational Calculations

We propose a universal approach to model intervalence charge transfer (IVCT) and metal-to-metal charge transfer (MMCT) transitions between ions in solids. The approach relies on already well-known and reliable ab initio RASSCF/CASPT2/RASSI-SO calculations for a series of emission center coordination geometries (restricted active space self-consistent field, complete active space second-order perturbation theory, and restricted active space state interaction with spin-orbit coupling). Embedding with ab initio model potentials (AIMPs) is used to represent the crystal lattice. We propose a way to construct the geometries via interpolation of the coordinates obtained using solid-state density functional theory (DFT) calculations for the structures where the activator metal is at specific oxidation (charge) states of interest. The approach thus takes the best of two worlds: the precision of the embedded cluster calculations (including localized excited states) and the geometries from DFT, where the effects of ionic radii mismatch (and eventual nearby defects) can be modeled explicitly. The method is applied to the Pr activator and Ti, Zr, Hf codopants in cubic Lu₂O₃, in which the said ions are used to obtain energy storage and thermoluminescence properties. Electron trap charging and discharging mechanisms (not involving a conduction band) are discussed in the context of the IVCT and MMCT role in them. Trap depths and trap quenching pathways are analyzed.

Defects in hafnium-doped lutetium oxide and the corresponding electron traps: a meta-generalized gradient approximation study

A number of Lu₂O₃-based materials were reported to present efficient capability of trapping excited charge carriers in metastable excited states formed either by specific dopants or naturally occurring defects. Over the years, abundant experimental data have been collected, which were taken as a solid ground to treat the problem using computational chemistry. Density functional theory (DFT) calculations with an advanced meta generalized gradient approximation (mGGA) functional were used to analyze electron trapping in cubic Lu₂O₃ doped with Hf. Individual ions of dopant and nearest-neighbor dopant ion pairs were considered. The effects of interstitial anions such as O^2- and Cl^- were analyzed. In most of the analyzed cases the additional electron charge is localized at the dopant site. However, in many of the studied cases, the dopant/defect states overlap with the conduction band and cannot correspond to electron trapping. The Hf³⁺ ion in the Lu site of C_3i local symmetry ({\rm Hf}^{\times}_{{\rm Lu}-C_{\rm 3i}}) corresponds to a moderate trap depth of 0.8-0.9 eV. Several composite defects corresponding to deeper (1.1-1.4 eV) traps also exist. Unambiguous deep traps (1.5-1.8 eV) correspond to systems with Hf dopant in the cationic void, accompanied by two interstitial oxygen atoms. The results thus indicate that basic `Hf-substitutes-Lu' doping is unlikely to correspond to the deep traps observed experimentally in Lu₂O₃:Tb,Hf andLu₂O₃:Pr,Hf and more complex defects must be involved.

Long persistent phosphors—from fundamentals to applications

We present multidisciplinary research on synthetic methods, afterglow mechanisms, characterization techniques, material kinds, and applications of long persistent phosphors.