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Albeltagi A, Gallegos-Rosas K, Soldano C. High- k Fluoropolymers Dielectrics for Low-Bias Ambipolar Organic Light Emitting Transistors (OLETs). MATERIALS (BASEL, SWITZERLAND) 2021; 14:7635. [PMID: 34947231 PMCID: PMC8704791 DOI: 10.3390/ma14247635] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2021] [Revised: 12/07/2021] [Accepted: 12/08/2021] [Indexed: 11/16/2022]
Abstract
Organic light emitting transistors (OLETs) combine, in the same device, the function of an electrical switch with the capability of generating light under appropriate bias conditions. In this work, we demonstrate how engineering the dielectric layer based on high-k polyvinylidene fluoride (PVDF)-based polymers can lead to a drastic reduction of device driving voltages and the improvement of its optoelectronic properties. We first investigated the morphology and the dielectric response of these polymer dielectrics in terms of polymer (P(VDF-TrFE) and P(VDF-TrFE-CFE)) and solvent content (cyclopentanone, methylethylketone). Implementing these high-k PVDF-based dielectrics enabled low-bias ambipolar organic light emitting transistors, with reduced threshold voltages (<20 V) and enhanced light output (compared to conventional polymer reference), along with an overall improvement of the device efficiency. Further, we preliminary transferred these fluorinated high-k dielectric films onto a plastic substrate to enable flexible light emitting transistors. These findings hold potential for broader exploitation of the OLET platform, where the device can now be driven by commercially available electronics, thus enabling flexible low-bias organic electronic devices.
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Affiliation(s)
- Ahmed Albeltagi
- Department of Physics and Mathematics, Institute of Photonics, University of Eastern Finland, 80100 Joensuu, Finland;
- Department of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, 02150 Espoo, Finland;
| | - Katherine Gallegos-Rosas
- Department of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, 02150 Espoo, Finland;
| | - Caterina Soldano
- Department of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, 02150 Espoo, Finland;
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Hempel M, Schroeder V, Park C, Koman VB, Xue M, McVay E, Spector S, Dubey M, Strano MS, Park J, Kong J, Palacios T. SynCells: A 60 × 60 μm 2 Electronic Platform with Remote Actuation for Sensing Applications in Constrained Environments. ACS NANO 2021; 15:8803-8812. [PMID: 33960771 DOI: 10.1021/acsnano.1c01259] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Autonomous electronic microsystems smaller than the diameter of a human hair (<100 μm) are promising for sensing in confined spaces such as microfluidic channels or the human body. However, they are difficult to implement due to fabrication challenges and limited power budget. Here we present a 60 × 60 μm electronic microsystem platform, or SynCell, that overcomes these issues by leveraging the integration capabilities of two-dimensional material circuits and the low power consumption of passive germanium timers, memory-like chemical sensors, and magnetic pads. In a proof-of-concept experiment, we magnetically positioned SynCells in a microfluidic channel to detect putrescine. After we extracted them from the channel, we successfully read out the timer and sensor signal, the latter of which can be amplified by an onboard transistor circuit. The concepts developed here will be applicable to microsystems targeting a variety of applications from microfluidic sensing to biomedical research.
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Affiliation(s)
- Marek Hempel
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Vera Schroeder
- Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Chibeom Park
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Franck Institute, University of Chicago, 5735 S Ellis Avenue, Chicago, Illinois 60637, United States
| | - Volodymyr B Koman
- Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Mantian Xue
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Elaine McVay
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Sarah Spector
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Madan Dubey
- Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, Maryland 20783, United States
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Jiwoong Park
- Department of Chemistry, Pritzker School of Molecular Engineering, and James Franck Institute, University of Chicago, 5735 S Ellis Avenue, Chicago, Illinois 60637, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
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Büyükekşi SI, Altındal A, Açar N, Şengül A. Structural, spectroscopic and passivation properties of a novel binuclear clamshell-type zinc(II) phthalocyanine as gate dielectric for OFET. J PORPHYR PHTHALOCYA 2018. [DOI: 10.1142/s1088424618500013] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Abstract
A novel clamshell-type binuclear zinc(II) phthalocyanine (2) was synthesized by cross condensation of the bisphthalonitrile (1) with 4-tert-butylphthalonitrile and zinc acetate in 1:10:4 ratio. The structure of the novel compound was characterized by elemental analysis, UV-vis, FT-IR (ATR), HR MALDI-TOF mass, [Formula: see text]H NMR, [Formula: see text]C DEPT NMR and [Formula: see text]H–[Formula: see text]H COSY NMR methods. Applying electronic absorption spectroscopy and density functional theory (DFT) revealed that in THF the geometry of 2 is twisted to adopt an intermediate clamshell conformation in which the spacing between the Zn centers is about 8.1Å, providing a very good account of the observed spectrum exhibiting the characteristic B (Soret) band at 347 nm and the Q band at 673 nm. In solution, 2 was found to exist in non-aggregated form. The calculated fluorescence quantum yields ([Formula: see text] 0.23 in THF and 0.10 in DMF) were relatively reduced in comparison to that of std ZnPc. In particular, understanding of leakage current conduction mechanisms in gate dielectrics is crucial for the development of field effect transistors with improved device performance. Analysis of the reverse bias current–voltage data indicated that the origin of leakage current conduction mechanisms in clamshell-type zinc(II) phthalocyanine is Poole-Frenkel emission. The capacitance density of 12.7 nF cm[Formula: see text] at 5 Hz. and 12.1 nF cm[Formula: see text] at 13 MHz was obtained with the FTO/Pc/Au sandwich structure.
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Affiliation(s)
- Sebile Işık Büyükekşi
- Department of Chemistry, Faculty of Arts and Sciences, Bülent Ecevit University, TR-67100 Zonguldak, Turkey
| | - Ahmet Altındal
- Department of Physics, Yıldız Technical University, Esenler, Istanbul, TR-34220, Turkey
| | - Nursel Açar
- Department of Chemistry, Faculty of Science, Ege University, 35100 Bornova, Izmir, Turkey
| | - Abdurrahman Şengül
- Department of Chemistry, Faculty of Arts and Sciences, Bülent Ecevit University, TR-67100 Zonguldak, Turkey
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Robin M, Kuai W, Amela-Cortes M, Cordier S, Molard Y, Mohammed-Brahim T, Jacques E, Harnois M. Epoxy Based Ink as Versatile Material for Inkjet-Printed Devices. ACS APPLIED MATERIALS & INTERFACES 2015; 7:21975-84. [PMID: 26372334 DOI: 10.1021/acsami.5b06678] [Citation(s) in RCA: 34] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Drop on Demand inkjet printing is an attractive method for device fabrication. However, the reliability of the key printing steps is still challenging. This explains why versatile functional inks are needed. Epoxy based ink described in this study could solve this critical issue because it can be printed with low drawbacks (satellites droplets, long-lived filaments, etc.). Moreover, a wide concentration range of solute allows the fabrication of films from thin to high aspect ratio. Optimizing experimental parameters (temperature, overlap) and ink composition (single or cosolvent) is useful to tune the film profile. As a result, many shapes can be obtained such as donuts or hemispherical caps for a droplet and smooth or wavy shape for a thin film. This study demonstrates that epoxy based versatile ink can be used in numerous fields of applications (organic electronics, optics, sensors, MEMS, etc.). To prove this assertion, organic field effect transistors and light emitting films have been fabricated.
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Affiliation(s)
- Malo Robin
- Université Rennes 1, Institut d'Électronique et des Télécommunications de Rennes, UMR CNRS 6164 , Département Microélectronique & Microcapteurs, Campus de Beaulieu, 35042 Rennes Cedex, France
- Université Rennes 1, UMR Institut des Science Chimiques de Rennes, UR1-CNRS 6226 , Campus de Beaulieu, CS 74205, 35042 Rennes Cedex, France
| | - Wenlin Kuai
- Université Rennes 1, Institut d'Électronique et des Télécommunications de Rennes, UMR CNRS 6164 , Département Microélectronique & Microcapteurs, Campus de Beaulieu, 35042 Rennes Cedex, France
| | - Maria Amela-Cortes
- Université Rennes 1, UMR Institut des Science Chimiques de Rennes, UR1-CNRS 6226 , Campus de Beaulieu, CS 74205, 35042 Rennes Cedex, France
| | - Stéphane Cordier
- Université Rennes 1, UMR Institut des Science Chimiques de Rennes, UR1-CNRS 6226 , Campus de Beaulieu, CS 74205, 35042 Rennes Cedex, France
| | - Yann Molard
- Université Rennes 1, UMR Institut des Science Chimiques de Rennes, UR1-CNRS 6226 , Campus de Beaulieu, CS 74205, 35042 Rennes Cedex, France
| | - Tayeb Mohammed-Brahim
- Université Rennes 1, Institut d'Électronique et des Télécommunications de Rennes, UMR CNRS 6164 , Département Microélectronique & Microcapteurs, Campus de Beaulieu, 35042 Rennes Cedex, France
| | - Emmanuel Jacques
- Université Rennes 1, Institut d'Électronique et des Télécommunications de Rennes, UMR CNRS 6164 , Département Microélectronique & Microcapteurs, Campus de Beaulieu, 35042 Rennes Cedex, France
| | - Maxime Harnois
- Université Rennes 1, Institut d'Électronique et des Télécommunications de Rennes, UMR CNRS 6164 , Département Microélectronique & Microcapteurs, Campus de Beaulieu, 35042 Rennes Cedex, France
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Homogeneous Crystallization of Micro-DispensedTIPS-Pentacene Using a Two-Solvent System toEnable Printed Inverters on Foil Substrates. ELECTRONICS 2015. [DOI: 10.3390/electronics4030565] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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