Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips

High-Pressure-Assisted Large-Area (>2400 mm2) Sintered-Silver Substrate Bonding for SiC Power Module Packaging

The emergence of new semiconductor devices puts forward higher requirements for packaging technology. Sintered silver technology has gradually developed into critical packaging technology in silicon carbide power module packaging due to its good heat dissipation performance and reliability. However, high sintering drive requirements, low sintering densification, and high thermal-mechanical stresses limit the application of sintered silver technology for large-area bonding. In this study, the high-pressure-assisted (≥10 MPa) large-area sintered-silver interconnection process between a substrate and baseplate was discussed. C-scan acoustic microscopy, warpage testing, and microanalysis were used to analyze the effects of drying methods, sintering pressure, and holding time on the sintered joints, and thermal fatigue reliability tests were conducted on large-area sintered silver joints. The results demonstrated that the quality of large-area sintered joints obtained via open-face convective drying is higher than that via close-face convective drying. Combining the performance of sintered joints and productivity, the recommended process condition is determined as follows: open-face convective drying, sintering temperature of 250 °C, sintering pressure of 15 MPa, and holding time of 5 min. Large-area sintered joints have outstanding reliability, with slight delamination of the sintered layer at the corners and no cracking after 1000 cycles of temperature cycling.

Three-dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules

A time-lapse study of thermomechanical fatigue damage has been undertaken using three-dimensional X-ray computer tomography. Morphologies were extracted from tomography data and integrated with data from microscopy modalities at different resolution levels. This enables contextualization of some of the fine-scale properties which underpin the large-scale damage observed via tomography. Lateral views of crack development are presented, which show networks analogous to mud-cracks. Crack fronts which develop in the most porous regions within the sintered attachment layer travel across the boundary into the copper substrate. The propagation characteristics of these cracks within the substrate are analysed. Evidence is provided of heterogeneous densification within the sintered joint under power cycling, and this is shown to play a major role in driving the initiation and propagation of the cracks. Examination of the texture (differing levels of X-ray absorption) of virtual cross-sectional images reveals the origins of the nonuniformity of densification. Finally, cracks within the sintered joint are shown to have a negligible impact on the conduction pathway of the joint due to their aspect ratio and orientation with respect to the assembly. LAY DESCRIPTION: This paper concerns the use of three-dimensional (3D) X-ray tomography, a nondestructive technique, to perform cradle-to-grave studies of sintered nanosilver die-attachments under operation. Sintered nanosilver die-attachments have been proposed as a more reliable and environmentally friendly alternative to solder alloy joints for emerging power electronics module designs. However, their degradation mechanisms are not as well understood. This same sample-study is about observing how the fine-scale structure of a sintered attachment evolves and degrades over time. Using 3D tomography affords otherwise infeasible perspectives, such as virtual cross-sections in the lateral plane of the attachment. These perspectives provide qualitative information which elucidates the degradation mechanisms. They demonstrate, for example, that the structure of the sintered attachment densifies under operation, and a consequence of this is the formation of shrinkage cracks in the most porous regions, much like mud-cracks. Other imaging techniques (metallographic etching and scanning electron microscopy) have been used in correlation with 3D renderings of these cracks to analyse their propagation and reveal their relationship both with the internal structure of the sintered attachment itself, and the structure of the substrate to which it is joined. It is shown that the cracks develop within the sintered attachment layer and eventually cross over into the substrate. A comparison of two sintered attachments with contrasting bulk porosities allows the effect of initial bond quality on crack development to be examined.

Electric Current-Assisted Joining of Copper Plates Using Silver Formed by In-Situ Decomposition of Ag2C2O4

Pulsed electric current can be used for the fast sintering of powders as well as joining of macroobjects. In this work, we brazed copper plates using a silver layer that was formed in situ by the decomposition of a silver oxalate Ag2C2O4 powder placed between the plates. Joining was conducted in the chamber of a Spark Plasma Sintering (SPS) facility with and without a graphite die. In the die-assisted tooling configuration, indirect heating of the assembly from the graphite die carrying electric current occurred until the brazing layer transformed into metallic silver. The passage of electric current through a Cu/Ag2C2O4/Cu stack placed between the electrodes without a die was possible because of the formation of Cu/Cu contacts in the areas free from the Ag2C2O4 particles. Joints that were formed in the die-assisted experiments showed a slightly higher shear strength (45 MPa) in comparison with joints formed without a die (41 MPa). The shear strength of the reference sample (obtained without a die), a stack of copper plates joined without any brazing layer, was only 31 MPa, which indicates a key role of the silver in producing strong bonding between the plates. This study shows that both die-assisted tooling configurations and those without a die can be used for the SPS brazing of materials by the oxalate-derived silver interlayer.

Recent Progress in Rapid Sintering of Nanosilver for Electronics Applications

Recently, nanosilver pastes have emerged as one of the most promising high temperature bonding materials for high frequency and high power applications, which provide an effective lead-free electronic packaging solution instead of high-lead and gold-based solders. Although nanosilver pastes can be sintered at lower temperature compared to bulk silver, applications of nanosilver pastes are limited by long-term sintering time (20⁻30 min), relative high sintering temperature (>250 °C), and applied external pressure, which may damage chips and electronic components. Therefore, low temperature rapid sintering processes that can obtain excellent nanosilver joints are anticipated. In this regard, we present a review of recent progress in the rapid sintering of nanosilver pastes. Preparation of nanosilver particles and pastes, mechanisms of nanopastes sintering, and different rapid sintering processes are discussed. Emphasis is placed on the properties of sintered joints obtained by different sintering processes such as electric current assisted sintering, spark plasma sintering, and laser sintering, etc. Although the research on rapid sintering processes for nanosilver pastes has made a great breakthrough over the past few decades, investigations on mechanisms of rapid sintering, and the performance of joints fabricated by pastes with different compositions and morphologies are still far from enough.