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Brand O, Wolftson B, Malka D. A Compact Polarization MMI Combiner Using Silicon Slot-Waveguide Structures. MICROMACHINES 2023; 14:1203. [PMID: 37374788 DOI: 10.3390/mi14061203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Revised: 05/31/2023] [Accepted: 06/05/2023] [Indexed: 06/29/2023]
Abstract
The study of designing a compact transverse electric (TE)/transverse magnetic (TM) polarization multimode interference (MMI) combiner based on silicon slot-waveguide technology is proposed for solving the high demands for high-speed ability alongside more energy power and minimizing the environmental impact of power consumption, achieving a balance between high-speed performance and energy efficiency has become an important consideration in an optical communication system. The MMI coupler has a significant difference in light coupling (beat-length) for TM and TE at 1550 nm wavelength. By controlling the light propagation mechanism inside the MMI coupler, a lower order of mode can be obtained which can lead to a shorter device. The polarization combiner was solved using the full-vectorial beam propagation method (FV-BPM), and the main geometrical parameters were analyzed using Matlab codes. Results show that after a short light propagation of 16.15 μm, the device can function as TM or TE combiner polarization with an excellent extinction ratio of 10.94 dB for TE mode and 13.08 dB for TM mode with low insertion losses of 0.76 dB (TE) and 0.56 dB (TM) and the combiner function well over the C-band spectrum. The polarization combiner also has a robust MMI coupler length tolerance of 400 nm. These attributes make it a good candidate for using this proposed device in photonic integrated circuits for improving power ability at the transmitter system.
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Affiliation(s)
- Omer Brand
- Faculty of Engineering Holon, Institute of Technology (HIT), Holon 5810201, Israel
| | - Benjamin Wolftson
- Faculty of Engineering Holon, Institute of Technology (HIT), Holon 5810201, Israel
| | - Dror Malka
- Faculty of Engineering Holon, Institute of Technology (HIT), Holon 5810201, Israel
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1 × 4 Wavelength Demultiplexer C-Band Using Cascaded Multimode Interference on SiN Buried Waveguide Structure. MATERIALS 2022; 15:ma15145067. [PMID: 35888535 PMCID: PMC9318391 DOI: 10.3390/ma15145067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2022] [Revised: 07/14/2022] [Accepted: 07/19/2022] [Indexed: 11/23/2022]
Abstract
Back reflection losses are a key problem that limits the performances of optical communication systems that work on wavelength division multiplexing (WDM) technology based on silicon (Si) Multimode Interference (MMI) waveguides. In order to overcome this problem, we propose a novel design for a 1 × 4 optical demultiplexer based on the MMI in silicon nitride (SiN) buried waveguide structure that operates at the C-band spectrum. The simulation results show that the proposed device can transmit four channels with a 10 nm spacing between them that work in the C-band with a low power loss range of 1.98–2.35 dB, large bandwidth of 7.68–8.08 nm, and good crosstalk of 20.9–23.6 dB. Thanks to the low refractive index of SiN, a very low back reflection of 40.57 dB is obtained without using a special angled MMI design, which is usually required, using Si MMI technology. Thus, this SiN demultiplexer MMI technology can be used in WDM technique for obtaining a high data bitrate alongside a low back reflection in optical communication systems.
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O-Band Multimode Interference Coupler Power Combiner Using Slot-Waveguide Structures. APPLIED SCIENCES-BASEL 2022. [DOI: 10.3390/app12136444] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Photonic transmitters that operate with a high data transfer rate (over 150 Gb/s) at the O-band range (1260–1360 nm) require at least 100 milliwatts of power to overcome the power losses that are caused by using high-speed modulators. A laser with higher power can probably handle this requirement; however, for the transmitter system, this solution can be problematic due to the nonlinear effects that can happen, which may lead to high noise in the transmitter system. Thus, to solve this issue, we propose a new design of a 2 × 1 multimode interference (MMI) power combiner using silicon nitride (SiN) slot waveguide structures. The MMI power combiner and the SiN slot waveguide structures were optimized using the full-vectorial beam propagation method (FV-BPM) and the finite difference time domain (FDTD) method. After combining two sources, high efficiency was obtained of 94.8–97.6% from the total power after a short coupling length of 109.81 µm over the O-band range with a low back reflection of 44.94 dB. Thus, the proposed device can be very useful for combining two O-band sources to gain a higher power level, which can be utilized to improve performances in transmitter systems.
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Zhang Z, Liu T, Zhang K, Li M, Liu H, Li H, Niu P, Gu E. Bidirectional grating based interleaved angled MMI for high-uniformity wavelength division (de)multiplexing and surface-normal fiber packaging. APPLIED OPTICS 2021; 60:5615-5622. [PMID: 34263853 DOI: 10.1364/ao.425195] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2021] [Accepted: 06/03/2021] [Indexed: 06/13/2023]
Abstract
We propose and experimentally demonstrate a vertical fiber interfacing interleaved angled multimode interference (MMI) coupler for wavelength-division multiplexing (WDM) applications. This four-channel WDM device comprises two 1×2 angled MMI couplers and a bidirectional grating-based Mach-Zehnder interferometer (MZI) structure. In the MZI optical interleaver, the uniform bidirectional grating functions as both the perfectly vertical grating coupler and the 3 dB power splitter. Benefitting from the flat-top coupling spectrum of the grating coupler, a high-uniformity wavelength-division (de)multiplexing can be achieved with a simulated insertion loss of 3.15-3.36 dB (the nonuniformity of 0.22 dB). The angled MMIs (AMMIs) are designed and optimized using the eigenmode expansion method. For wavelength matching between the MZI and AMMIs, the circuit simulation model of the interleaved AMMI is built by importing the S-parameter matrices of all the optical components extracted from the physical level simulations. The device was fabricated using standard CMOS technology and all the features were patterned with the 193-nm deep-UV lithography. Experimental results obtained without thermal tuning are in good agreement with the simulation results. The device exhibits an insertion loss of 4.5-4.65 dB (nonuniformity of 0.15 dB), channel spacing of 10 nm, and cross talk of -(21.62-26)dB.
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A Four Green TM/Red TE Demultiplexer Based on Multi Slot-Waveguide Structures. MATERIALS 2020; 13:ma13143219. [PMID: 32698353 PMCID: PMC7412051 DOI: 10.3390/ma13143219] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/12/2020] [Revised: 07/10/2020] [Accepted: 07/16/2020] [Indexed: 11/17/2022]
Abstract
A four green transverse magnetic (TM)/red transverse electric (TE) light wavelength demultiplexer device, based on multi slot-waveguide (SW) structures is demonstrated. The device aims to demultiplex wavelengths in the green/red light range with wavelengths of 530, 540, 550, and 560 nm; 630, 640, 650, and 660 nm. This means that the device functions as a 1 × 4 demultiplexer for each polarization mode (TE/TM). The controlling of the light switching between two closer segment SWs under the TM/TE polarization mode was studied by designing a suitable SW structure and setting the right segment length to fit the coupling lengths of the operating wavelengths. The device is composed of six-segment SW units and six S-bends (SB) SW. The key SW and SB parameters were optimized and determined by a full vectorial beam propagation method (FV-BPM). Results show power losses better than 0.138 dB, crosstalk better than -21.14 dB, and an optical spectrum smaller than 9.39 nm, with an overall compact size of 104.5 µm. The device can be integrated in wavelength division multiplexing (WDM) for increasing data bit rate in a visible light communication (VLC) system.
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D-RoF and A-RoF Interfaces in an All-Optical Fronthaul of 5G Mobile Systems. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10041212] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
This paper presents a solution for enabling the coexistence of digitized radio-over-fiber (D-RoF) and analog radio-over-fiber (A-RoF) interfaces operating in the optical fronthaul of 5G mobile systems. In the first section, we formulate the need to introduce new technologies to the cloud/centralized radio access network (C-RAN) (Next Generation RAN (NG-RAN) in 5G systems). A proposition of construction of the optical remote radio head (O-RRH)/gNodeB—distributed unit (gNB-DU), which will enable the operation of digital Splits/Options and new proposed analog Splits/Options, is presented. The methods performing calculations of bit rate and optical bandwidth demand in the fronthaul/midhaul, with reference to the parameters of the new-radio-release-15 (NR-Rel-15) wireless interface and subsequent releases, towards the next generations, are presented. The bandwidth demands were calculated for selected Splits/Options, and the results are shown in diagrams. A special section is devoted to description of the results achieved and presenting potential applications of the proposed construction of a radio-photonic device as well as new Splits/Options of the next generation fronthaul/midhaul.
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Signal Analysis, Signal Demodulation and Numerical Simulation of a Quasi-Distributed Optical Fiber Sensor Based on FDM/WDM Techniques and Fabry-Pérot Interferometers. SENSORS 2019; 19:s19081759. [PMID: 31013787 PMCID: PMC6514803 DOI: 10.3390/s19081759] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2019] [Revised: 04/02/2019] [Accepted: 04/05/2019] [Indexed: 11/16/2022]
Abstract
In civil engineering quasi-distributed optical fiber sensors are used for reinforced concrete monitoring, precast concrete monitoring, temperature monitoring, strain monitoring and temperature/strain monitoring. These quasi-distributed sensors necessarily apply some multiplexing technique. However, on many occasions, two or more multiplexing techniques are combined to increase the number of local sensors and then the cost of each sensing point is reduced. In this work, a signal analysis and a new signal demodulation algorithm are reported for a quasi-distributed optic fiber sensor system based on Frequency Division Multiplexing/Wavelength Division Multiplexing (FDM/WDM) and low-precision Fabry-Pérot interferometers. The mathematical analysis and the new algorithm optimize its design, its implementation, improve its functionality and reduce the cost per sensing point. The analysis was corroborated by simulating a quasi-distributed sensor in operation. Theoretical analysis and numerical simulation are in concordance. The optimization considers multiplexing techniques, signal demodulation, physical parameters, system noise, instrumentation, and detection technique. Based on our analysis and previous results reported, the optical sensing system can have more than 4000 local sensors and it has practical applications in civil engineering.
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Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics. MATERIALS 2019; 12:ma12050689. [PMID: 30813566 PMCID: PMC6427114 DOI: 10.3390/ma12050689] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2019] [Revised: 02/14/2019] [Accepted: 02/20/2019] [Indexed: 11/17/2022]
Abstract
A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al₂O₃ gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion implanted source regions in a Mg ion implanted p-type base with N ion implanted termination regions. A maximum drain current of 115 mA/mm, maximum transconductance of 19 mS/mm at a drain voltage of 15 V, and a threshold voltage of 3.6 V were obtained for the fabricated DMOSFET with a gate length of 0.4 μm with an estimated p-type base Mg surface concentration of 5 × 1018 cm-3. The difference between calculated and measured Vths could be due to the activation ratio of ion-implanted Mg as well as Fermi level pinning and the interface state density. On-resistance of 9.3 mΩ·cm² estimated from the linear region was also attained. Blocking voltage at off-state was 213 V. The fully ion implanted GaN DMOSFET is a promising candidate for future high-voltage and high-power applications.
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Malka D, Katz G. An Eight-Channel C-Band Demux Based on Multicore Photonic Crystal Fiber. NANOMATERIALS 2018; 8:nano8100845. [PMID: 30336574 PMCID: PMC6215122 DOI: 10.3390/nano8100845] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/29/2018] [Revised: 10/12/2018] [Accepted: 10/15/2018] [Indexed: 11/16/2022]
Abstract
A novel eight-channel demux device based on multicore photonic crystal fiber (PCF) structures that operate in the C-band range (1530–1565 nm) has been demonstrated. The PCF demux design is based on replacing some air-hole areas with lithium niobate and silicon nitride materials over the PCF axis alongside with the appropriate optimizations of the PCF structure. The beam propagation method (BPM) combined with Matlab codes was used to model the demux device and optimize the geometrical parameters of the PCF structure. The simulation results showed that the eight-channel demux can be demultiplexing after light propagation of 5 cm with a large bandwidth (4.03–4.69 nm) and cross-talk (−16.88 to −15.93 dB). Thus, the proposed device has great potential to be integrated into dense wavelength division multiplexing (DWDM) technology for increasing performances in networking systems.
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Affiliation(s)
- Dror Malka
- Faculty of Engineering, Holon Institute of Technology (HIT), Holon 5810201, Israel.
| | - Gilad Katz
- Faculty of Engineering, Holon Institute of Technology (HIT), Holon 5810201, Israel.
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Low-Complexity Blind Selected Mapping Scheme for Peak-to-Average Power Ratio Reduction in Orthogonal Frequency-Division Multiplexing Systems. INFORMATION 2018. [DOI: 10.3390/info9090220] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
Abstract
Orthogonal frequency-division multiplexing (OFDM) is an attractive multicarrier technique for the simplicity of equalization and high data throughput. However, the transmitted OFDM signal has a very high peak-to-average power ratio (PAPR), which severely degrades the performance of practical OFDM systems and reduces the efficiency of high-power amplifiers (HPA). The selected mapping (SLM) scheme is an effective PAPR reduction method of OFDM signals. However, this approach usually requires side information (SI) transmission, which increases the difficulty of the hardware implementation with high complexity and reduces the data transmission rate. In this paper, based on designing phase rotation vectors in the time domain, a novel blind SLM method with low complexity is proposed to reduce the PAPR of OFDM signals. At the transmitter, the proposed method properly designs the phase rotation vectors in the time domain, which can be considered as an equivalent wireless channel without SI transmission. At the receiver, the effect of phase rotation vectors can be removed by the conventional channel estimation method, and the data demodulation processing can be easily performed by the frequency domain equalization. Simulation results show that the proposed scheme can achieve low complexity in PAPR reduction and has great robustness in bit error rate (BER) performance compared to the other low-complexity SLM PAPR schemes.
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Programmable Adaptive BVT for Future Optical Metro Networks Adopting SOA-Based Switching Nodes. PHOTONICS 2018. [DOI: 10.3390/photonics5030024] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Adaptive Sliceable-Bandwidth Variable Transceivers (S-BVTs) are key enablers for future optical networks. In particular, those based on Discrete MultiTone (DMT) modulation and Direct Detection (DD) can be considered a flexible solution suitable to address the cost efficiency requirement of optical metro networks. In this paper, we propose to use a cost-effective S-BVT option/implementation in optical metro networks adopting switching nodes based on Semiconductor Optical Amplifier (SOA) technology. Bit loading (BL) and power loading (PL) algorithms are applied to the Digital Signal Processing (DSP) modules, to maximize the performance and/or the capacity as well as enhance the flexibility and adaptability of the system. Our analysis considers switching nodes based on SOAs with and without filtering elements and fiber spans of 25 km. We present the results up to 100 km, with and without SOA-based nodes. Firstly, we analyze the adaptive BVT transmission using the Margin Adaptive (MA) BL/PL algorithm at a fixed bit rate of 28 Gb/s. The possibility of controlling the SOAs current is a key factor to face the transmission impairments due to the fiber and the filtering elements. We also analyze the system considering Rate Adaptive (RA) transmission at a fixed target Bit Error Rate (BER) of 3.8 × 10−3, showing that a maximum capacity above 34 Gb/s can be achieved for a single span of 25 km. Although the cascading of filtering elements still constitutes a limiting factor, we show that an improvement of the net bit rate performance can be obtained thanks to the combined use of BVT and SOA technology at the switching nodes, resulting in a promising approach for designing future optical metro networks.
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An Investigation of the Wear on Silicon Surface at High Humidity. MATERIALS 2018; 11:ma11061027. [PMID: 29914157 PMCID: PMC6025518 DOI: 10.3390/ma11061027] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/31/2018] [Revised: 06/12/2018] [Accepted: 06/14/2018] [Indexed: 12/02/2022]
Abstract
Using an atomic force microscope (AFM), the wear of monocrystalline silicon (covered by a native oxide layer) at high humidity was investigated. The experimental results indicated that tribochemistry played an important role in the wear of the silicon at different relative humidity levels (RH = 60%, 90%). Since the tribochemical reactions were facilitated at 60% RH, the wear of silicon was serious and the friction force was around 1.58 μN under the given conditions. However, the tribochemical reactions were restrained when the wear pair was conducted at high humidity. As a result, the wear of silicon was very slight and the friction force decreased to 0.85 μN at 90% RH. The slight wear of silicon at high humidity was characterized by etching tests. It was demonstrated that the silicon sample surface was partly damaged and the native oxide layer on silicon sample surface had not been totally removed during the wear process. These results may help us optimize the tribological design of dynamic microelectromechanical systems working in humid conditions.
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Comparison of Basic Notch Filters for Semiconductor Optical Amplifier Pattern Effect Mitigation. APPLIED SCIENCES-BASEL 2017. [DOI: 10.3390/app7080783] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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A Theoretical Study and Numerical Simulation of a Quasi-Distributed Sensor Based on the Low-Finesse Fabry-Perot Interferometer: Frequency-Division Multiplexing. SENSORS 2017; 17:s17040859. [PMID: 28420083 PMCID: PMC5424736 DOI: 10.3390/s17040859] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/17/2017] [Revised: 04/11/2017] [Accepted: 04/12/2017] [Indexed: 11/16/2022]
Abstract
The application of the sensor optical fibers in the areas of scientific instrumentation and industrial instrumentation is very attractive due to its numerous advantages. In the industry of civil engineering for example, quasi-distributed sensors made with optical fiber are used for reliable strain and temperature measurements. Here, a quasi-distributed sensor in the frequency domain is discussed. The sensor consists of a series of low-finesse Fabry-Perot interferometers where each Fabry-Perot interferometer acts as a local sensor. Fabry-Perot interferometers are formed by pairs of identical low reflective Bragg gratings imprinted in a single mode fiber. All interferometer sensors have different cavity length, provoking frequency-domain multiplexing. The optical signal represents the superposition of all interference patterns which can be decomposed using the Fourier transform. The frequency spectrum was analyzed and sensor's properties were defined. Following that, a quasi-distributed sensor was numerically simulated. Our sensor simulation considers sensor properties, signal processing, noise system, and instrumentation. The numerical results show the behavior of resolution vs. signal-to-noise ratio. From our results, the Fabry-Perot sensor has high resolution and low resolution. Both resolutions are conceivable because the Fourier Domain Phase Analysis (FDPA) algorithm elaborates two evaluations of Bragg wavelength shift.
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