Au-Embedded and Carbon-Doped Freestanding TiO2 Nanotube Arrays in Dye-Sensitized Solar Cells for Better Energy Conversion Efficiency

Effect of Au Nanoparticles and Scattering Layer in Dye-Sensitized Solar Cells Based on Freestanding TiO2 Nanotube Arrays

The development of high efficiency dye-sensitized solar cells (DSSCs) has received tremendous attention. Many researchers have introduced new materials for use in DSSCs to achieve high efficiency. In this study, the change in power conversion efficiency (PCE) of DSSCs was investigated by introducing two types of materials—Au nanoparticles (Au NPs) and a scattering layer. A DSSC fabricated without neither Au NPs nor a scattering layer achieved a PCE of 5.85%. The PCE of a DSSC based on freestanding TiO₂ nanotube arrays (f-TNTAs) with Au NPs was 6.50% due to better electron generation because the plasmonic absorption band of Au NPs is 530 nm, which matches the dye absorbance. Thus, more electrons were generated at 530 nm, which affected the PCE of the DSSC. The PCE of DSSCs based on f-TNTAs with a scattering layer was 6.61% due to better light harvesting by scattering. The scattering layer reflects all wavelengths of light that improve the light harvesting in the active layer in DSSCs. Finally, the PCE of DSSCs based on the f-TNTAs with Au NPs and a scattering layer was 7.12% due to the synergy of better electron generation and light harvesting by plasmonics and scattering. The application of Au NPs and a scattering layer is a promising research area for DSSCs as they can increase the electron generation and light harvesting ability.

Growth of Less than 20 nm SnO Nanowires Using an Anodic Aluminum Oxide Template for Gas Sensing

Stannous oxide (SnO) nanowires were synthesized by a template and catalyst-free thermal oxidation process. After annealing a Sn nanowires-embedded anodic aluminum oxide (AAO) template in air, we obtained a large amount of SnO nanowires. SnO nanowires were first prepared by electrochemical deposition and an oxidization method based on an AAO template. The preparation of SnO nanowires used aluminum sheet (purity 99.999%) and then a two-step anodization procedure to obtain a raw alumina mold. Finally, transparent alumina molds (AAO template) were obtained by reaming, soaking with phosphoric acid for 20 min, and a stripping process. We got a pore size of < 20 nm on the transparent alumina mold. In order to meet electroplating needs, we produced a platinum film on the bottom surface of the AAO template by using a sputtering method as the electrode of electroplating deposition. The structure was characterized by X-ray diffraction (XRD). High resolution transmission electron microscopy (HRTEM) and field emission scanning electron microscopy (FESEM) with X-ray energy dispersive spectrometer (EDS) were used to observe the morphology. The EDS spectrum showed that components of the materials were Sn and O. FE-SEM results showed the synthesized SnO nanowires have an approximate length of ~10–20 μm with a highly aspect ratio of > 500. SnO nanowires with a Sn/O atomic ratio of ~1:1 were observed from EDS. The crystal structure of SnO nanowires showed that all the peaks within the spectrum lead to SnO with a tetragonal structure. This study may lead to the use of the 1D structure nanowires into electronic nanodevices and/or sensors, thus leading to nano-based functional structures.

Process Optimization of Via Plug Multilevel Interconnections in CMOS Logic Devices

This paper reports on the optimization of the device and wiring in a via structure applied to multilevel metallization (MLM) used in CMOS logic devices. A MLM via can be applied to the Tungsten (W) plug process of the logic device by following the most optimized barrier deposition scheme of RF etching 200 Å IMP Ti (ion metal plasma titanium) 200 Å CVD TiN (titanium nitride deposited by chemical vapor deposition) 2 × 50 Å. The resistivities of the glue layer and barrier, i.e., IMP Ti and CVD TiN, were 73 and 280 μΩ·cm, respectively, and the bottom coverages were 57% and 80%, respectively, at a 3.2:1 aspect ratio (A/R). The specific resistance of the tungsten film was approximately 11.5 μΩ·cm, and it was confirmed that the via filling could be performed smoothly. RF etching and IMP Ti should be at least 200 Å each, and CVD TiN can be performed satisfactorily with the existing 2 × 50 Å process. Tungsten deposition showed no difference in the via resistance with deposition temperature and SiH4 reduction time. When the barrier scheme of RF etching 200 Å IMP Ti 200 ÅCVD TiN 2 × 50 Å was applied, the via resistance was less than 20 Ω, even with a side misalignment of 0.05 μm and line-end misalignment of ~0.1 μm.

Au-Embedded and Carbon-Doped Freestanding TiO2 Nanotube Arrays in Dye-Sensitized Solar Cells for Better Energy Conversion Efficiency

Dye-sensitized solar cells (DSSCs) are fabricated with freestanding TiO2 nanotube arrays (TNTAs) which are incorporated with Au nanoparticles (NPs) and carbon materials via electrodeposition and chemical vapor deposition (CVD) method to create a plasmonic effect and better electron transport that will enhance their energy conversion efficiency (ECE). The ECE of DSSCs based on the freestanding TNTAs is 5.87%. The ECE of DSSCs, based on the freestanding TNTAs with Au NPs or carbon materials, is 6.57% or 6.59%, respectively, and the final results of DSSCs according to the freestanding TNTAs with Au NPs and carbon materials is increased from 5.87% to 7.24%, which is an enhancement of 23.34% owing to plasmonic effect and better electron transport. Au NPs are incorporated into the channel of freestanding TNTAs and are characterized by CS-corrected-field emission transmission electron microscope (Cs-FE-TEM) and elemental mapping. Carbon materials are also well-incorporated in the channel of freestanding TNTAs and are analyzed by Raman spectroscopy.